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液相外延生长     
相关语句
  liquid phase epitaxial growth
     Liquid Phase Epitaxial Growth of In_(0.53)Ga_(0.47) As
     In_(0.53)Ga_(0.47)As的液相外延生长
短句来源
     Liquid phase epitaxial growth of large area Hg_(1-x)Cd_xTe epitaxial layers
     液相外延生长大面积Hg_(1-x)Cd_xTe外延层
短句来源
     Liquid Phase Epitaxial Growth of 3C-SiC and Studies on Steadiness andCharacterization of Its Structure
     3C-SiC的液相外延生长及其结构的保持与分析
短句来源
     A REVIEW ON THE LIQUID PHASE EPITAXIAL GROWTH OF REBCO THICK FILMS
     REBCO厚膜的液相外延生长研究
短句来源
     In this thesis, some fundamental topics on p-SiC crystal growth such as the design of the crucible assembling system, the thermal field distribution and the liquid phase epitaxial growth of p-SiC films deposited on Si have been discussed. In brief, following major creative results have been obtained:
     本文探索β碳化硅晶体生长技术的若干基本问题,特别对热系统的设计和热场分布问题,以及用β-SiC薄膜在碳饱和硅熔体中进行液相外延生长的基本工艺问题等进行了研究,获得以下主要创新结果:
短句来源
更多       
  liquid phase epitaxy
     Growth of 1.3μm Double Heterostructure GaInAsP/InP by Liquid Phase Epitaxy
     液相外延生长1.3μm GaInAsP/InP双异质结
短句来源
     A Review on Physical and Chemical Studies of REBa_2Cu_3O_(7-δ)/MgO Liquid Phase Epitaxy Growth in Initial Stage
     REBa_2Cu_3O_(7-δ)/MgO液相外延生长初始阶段的物理化学研究
短句来源
     Growth of Cr,Ca∶YAG by Liquid Phase Epitaxy
     Cr,Ca∶YAG的液相外延生长
短句来源
     Spectra of Cr,Ca∶YAG Grown by Liquid Phase Epitaxy
     液相外延生长Cr,Ca∶YAG晶体的光谱特性
短句来源
     Study on Growth of 1.55μm GaInAsP Double Heterostructure by Low Temperature Liquid Phase Epitaxy on n-InP(100)Substrates
     在n—InP(100)衬底上低温液相外延生长1.55μm GaInAsP双异质结构层的研究
短句来源
更多       
  liquid phase epitaxy growth
     STUDY ON INITIAL STAGE OF YBCO LIQUID PHASE EPITAXY GROWTH
     YBCO液相外延生长初始阶段的研究
短句来源
     A Review on Physical and Chemical Studies of REBa_2Cu_3O_(7-δ)/MgO Liquid Phase Epitaxy Growth in Initial Stage
     REBa_2Cu_3O_(7-δ)/MgO液相外延生长初始阶段的物理化学研究
短句来源
     Liquid Phase Epitaxy Growth for GaAs and InP
     砷化镓、磷化铟化合物的液相外延生长
短句来源
     The studies on initial stage of REBa2Cu3O7-δ (REBCO) liquid phase epitaxy growth on MgO substrate were reviewed.
     本文综述了RE(RE=Y,Nd)BCO高温超导体厚膜在MgO基片上液相外延生长(Liquid Phase Epitaxy,LPE)的初始阶段研究。
短句来源
  “液相外延生长”译为未确定词的双语例句
     LPE Growth of Ga_xIn_(1-x) P-GaAs
     Ga_xIn_(1-x)P-GaAs的液相外延生长
短句来源
     LPE Growth and Growth Mechanism of Pb(Zn_(1/3)Nb_(2/3))O_3-PbTiO_3 Films
     液相外延生长Pb(Zn_(1/3)Nb_(2/3))O_3-PbTiO_3膜及生长机理研究
短句来源
     This paper describes the LPE growth of Ga0.47In0.53As/InP on(100) and (111) InP.
     本文叙述在(100)和(111)InP衬底上Ga_(0.47)In_(0.53)As/InP液相外延生长方法.
短句来源
     LPE Growth and Properties of In_xGa_(1-x)As_ySb_(1-y)Lattice-Matched to (100) GaSb
     液相外延生长In_xGa_(1-x)As_ySb_(1-y)/GaSb及其性质研究
短句来源
     Growth and Doping Characteristics of Al_xGa_(1-x)As Grown by LPE at 780℃
     780℃下液相外延生长周Al_xGa_(1-x)As的生长和掺杂特性
短句来源
更多       
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  liquid phase epitaxial growth
In the crystal growth, it was found that the liquidus and solidus isotherms are affected by the orientation of InP source and substrate crystals in the liquid phase epitaxial growth of GaInAsP alloys.
      
The influence of holmium addition during the liquid phase epitaxial growth (LPE) on the optoelectronic properties of InP and GaInAsP semiconductor layers has been studied.
      
The influence of holmium addition during the liquid phase epitaxial growth (LPE) on the optoelectronic properties of InP and GaInAsP semiconductor layers has been studied.
      
We report on liquid phase epitaxial growth of thick layers of GaInP(As) lattice matched to GaAs.
      
We report on liquid phase epitaxial growth of thick layers of GaInP(As) lattice matched to GaAs.
      
更多          
  liquid phase epitaxy
Isothermal liquid phase epitaxy of A3B5 compounds under excessive vapor pressure of the B5 component
      
Forsterite layers are grown by the method of liquid phase epitaxy from supercooled PbO-B2O3-based fluxes.
      
Morphological effects in liquid phase epitaxy (The C8H5O4K-C8H5O4Rb-H2O system)
      
The results obtained are used to create a theoretical model of formation of characteristic morphological textures in liquid phase epitaxy, including their formation from the aqueous solutions of the respective salts.
      
Epitaxial films grown by low-temperature liquid phase epitaxy on p-type 4H-SiC were used as strongly doped subcontact layers for making low-resistance contacts to the p-type material.
      
更多          
  liquid phase epitaxy growth
Liquid phase epitaxy growth of AlxGayIn1-x-yPzAs1-z/GaAs with direct band gap up to 2.0?eV
      
Liquid phase epitaxy growth of GaAs: Si by temperature difference method
      
Liquid phase epitaxy growth of InGaAs with rare-earth gettering: Characterization and deep level transient spectroscopy studies
      


Our apparatus for multilayer liquid phase epitaxy is described. Factors relating to the thin layer LPE growth are discussed. The epitaxy experiments are arranged to take advantage of the mathe- matical method of orthogonal process design. The regime of continuous and uniform growth has been found for the purpose of improving the threshold current density of GaAs-Ga1-xAlx As DH lasers up to 1000-2000A/cm2.

介绍我们采用的多次液相外延实验装置,讨论影响薄层液相外延生长的因素。采用 “正交设计”的数学方法安排外延试验,找到多层连续均匀生长的条件.使GaAs- Ga1-xAlxAs双异质结激光器阈值电流密度达到 1000—2000安培/平方厘米。

Our apparatus for multilayer liquid phase epitaxy is described. Factors relating to the thin layer LPE growth are discussed.The epitaxy experiments are arranged to take advantage of the mathematical method of orthogonal process design. The regime of continuous and uniform growth has been found for the purpose of improving the threshold current density of GaAs-Ga1-xAlx As DH lasers up to 1000-2000A/cm2.

介绍我们采用的多次液相外延实验装置,讨论影响薄层液相外延生长的因素。采用“正交设计”的数学方法安排外延试验,找到多层连续均匀生长的条件,使GaAs—Ga_(1-x)A1_xAs双异质结激光器阈值电流密度达到1000—2000安培/平方厘米。

GalnAsP/InP double-heterojunction material was grown by twophase LPE. Small area LEDs with output power of 1mW and emission wavelength of 1,3 μm at a forward current of 100mA were made from the wafers for fiber-optical communications. Epitaxial process and factors affecting property of the material were discussed.

用二相法液相外延生长了GaInAsP/InP双异质结材料。已制得用于光通讯的、小面积的、输出功率>1mW(工作电流100mA)的发光二极管。讨论了外延工艺和影响材料性质的因素。

 
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