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液相外延生长
相关语句
  liquid phase epitaxial growth
    Liquid Phase Epitaxial Growth of 3C-SiC and Studies on Steadiness andCharacterization of Its Structure
    3C-SiC的液相外延生长及其结构的保持与分析
短句来源
    A REVIEW ON THE LIQUID PHASE EPITAXIAL GROWTH OF REBCO THICK FILMS
    REBCO厚膜的液相外延生长研究
短句来源
  liquid phase epitaxy
    A STUDY ON HIGH-QUALITY HIGH POWER InGaAsP/ GaAs LASERS GROWN BY LIQUID PHASE EPITAXY
    液相外延生长高质量大功率InGaAsP/GaAs半导体激光器研究
短句来源
    Growth of Cr,Ca∶YAG by Liquid Phase Epitaxy
    Cr,Ca∶YAG的液相外延生长
短句来源
    Spectra of Cr,Ca∶YAG Grown by Liquid Phase Epitaxy
    液相外延生长Cr,Ca∶YAG晶体的光谱特性
短句来源
    STUDY ON INITIAL STAGE OF YBCO LIQUID PHASE EPITAXY GROWTH
    YBCO液相外延生长初始阶段的研究
短句来源
    The growth of saturable absorber Cr 4+∶YAG crystals by liquid phase epitaxy (LPE) is reported. The absorption characteristics of this co-doped Cr,Ca∶YAG epilayer is analyzed.
    报道了可饱和吸收体Cr4+∶YAG的液相外延生长 ,对双掺杂Cr ,Ca∶YAG外延层的吸收特性进行了分析。
短句来源
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  “液相外延生长”译为未确定词的双语例句
    LPE Growth of(Li_(1-x)Na_x)NbO_3 Single Crystal Thin Films for Surface Acoustic Wave(SAW)Device
    声表面波材料(Li_(1-x)Na_x)NbO_3单晶薄膜的液相外延生长
短句来源
    The GaAs/GaA1As LPE Growth on the SI-GaAs Terrace Substrate
    半绝缘GaAs台阶衬底上GaAs/GaAlAs液相外延生长
短句来源
    Growth of Double n-layer LPE GaP
    双n层GaP液相外延生长
短句来源
    LPE Growth of Bi,Sm,Ga-Substituted YIG Films
    Bi、Sm、Ga替代的YIG膜的液相外延生长
短句来源
    FLPE Growth KTP Waveguide Films
    KTP光波导薄膜的助熔剂液相外延生长
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  liquid phase epitaxial growth
In the crystal growth, it was found that the liquidus and solidus isotherms are affected by the orientation of InP source and substrate crystals in the liquid phase epitaxial growth of GaInAsP alloys.
      
The influence of holmium addition during the liquid phase epitaxial growth (LPE) on the optoelectronic properties of InP and GaInAsP semiconductor layers has been studied.
      
The influence of holmium addition during the liquid phase epitaxial growth (LPE) on the optoelectronic properties of InP and GaInAsP semiconductor layers has been studied.
      
We report on liquid phase epitaxial growth of thick layers of GaInP(As) lattice matched to GaAs.
      
We report on liquid phase epitaxial growth of thick layers of GaInP(As) lattice matched to GaAs.
      
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  liquid phase epitaxy
Isothermal liquid phase epitaxy of A3B5 compounds under excessive vapor pressure of the B5 component
      
Forsterite layers are grown by the method of liquid phase epitaxy from supercooled PbO-B2O3-based fluxes.
      
Morphological effects in liquid phase epitaxy (The C8H5O4K-C8H5O4Rb-H2O system)
      
The results obtained are used to create a theoretical model of formation of characteristic morphological textures in liquid phase epitaxy, including their formation from the aqueous solutions of the respective salts.
      
Epitaxial films grown by low-temperature liquid phase epitaxy on p-type 4H-SiC were used as strongly doped subcontact layers for making low-resistance contacts to the p-type material.
      
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Our apparatus for multilayer liquid phase epitaxy is described. Factors relating to the thin layer LPE growth are discussed.The epitaxy experiments are arranged to take advantage of the mathematical method of orthogonal process design. The regime of continuous and uniform growth has been found for the purpose of improving the threshold current density of GaAs-Ga1-xAlx As DH lasers up to 1000-2000A/cm2.

介绍我们采用的多次液相外延实验装置,讨论影响薄层液相外延生长的因素。采用“正交设计”的数学方法安排外延试验,找到多层连续均匀生长的条件,使GaAs—Ga_(1-x)A1_xAs双异质结激光器阈值电流密度达到1000—2000安培/平方厘米。

By means of MOS-DLTS method, two electron traps in LPE n-type In0.75Ga0.25As0.58P0.42 material have been observed. Their depths are 0.20 eV and 0.48 eV below conduction band, and capture cross sections of electrons are about 14 ×10(-16) cm2 and 3.8×10-(12)cm2, respectively.

采用MOS方法,在液相外延生长的n型In_(0.75)Ga_(0.25)As_(0.58)P_(0.42)混晶中,我们测出了两个位于导带下面0.20eV和0.48eV处的电子陷阱,对电子的俘获截面分别为1.4×10~(-16)cm~2和3.8×10~(-12)cm~2。 关于采用MOS方式研究具有多层结构的化合物半导体材料的DLITS问题,本文也进行了讨论。

AES (Auger Electron Speotroscopy) was used to study the composition depth profile of In1-xGa.xAsyP1-y-InP single heteroju notion fabricated by two-phase supercooling LPE (Liquid Phase epitaxy) method. The variation in initial growth tem perature of the quaternary layer covers the range of 631℃~641℃ and the cooling rate varied from 0.7℃/min to 1.2℃/min. It has been realized that the atom concentration in percent of each composition of the thin quaternary layer, whereof the thickness is less than 0.5μm, does not...

AES (Auger Electron Speotroscopy) was used to study the composition depth profile of In1-xGa.xAsyP1-y-InP single heteroju notion fabricated by two-phase supercooling LPE (Liquid Phase epitaxy) method. The variation in initial growth tem perature of the quaternary layer covers the range of 631℃~641℃ and the cooling rate varied from 0.7℃/min to 1.2℃/min. It has been realized that the atom concentration in percent of each composition of the thin quaternary layer, whereof the thickness is less than 0.5μm, does not vary with the depth Z. The atom concentration in percent of phosphorus CP (Z) in the compositional transition layerof the heterojunction interface versus the depth Z can be formulated experimentally as a hyperbolic tangent function.

用俄歇电子能谱研究了由两相过冷溶液法液相外延生长的In_(1-x)Ga_xAs_yP_(1-y)-InP单异质结.四元层初始生长温度在631℃至641℃范围内变化;降温速率在0.7/~1.2℃/分之间变化.层厚小于0.5μm的薄四元层内各组分的原子百分浓度不随深度而变,即不存在组分梯度.异质结界面组分过渡层内P组分的原子百分浓度Cp(Z)随深度Z的变化,可用一双曲正切函数的经验公式表达.

 
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