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液相外延生长
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  liquid phase epitaxy
    The technology of the liquid phase epitaxy growing silicon single cry-stal thin layer is described in this article N-type silicon single crystalthin layers doped with Sn have been grown by isothermal liquid phaseepitaxy technique at 950 c Scaning electron microscope observation showthat the thickness of the layer grown by this method is homogeneousinterface between fhe layer and the substrat is distinct, The experimentalresuuets are good agreement with the works reported by other authors
    本文提出了液相外延生长硅单晶薄膜的工艺,选择Sn为熔剂,在950℃的温度下等温液相外延生长了掺锑的型硅单晶薄膜,扫描电子显微镜观察表明生长的膜厚度比较均匀,膜与基片的边界比较明显,试验的结果表明与国外发表的工作较好地一致。
短句来源
  “液相外延生长”译为未确定词的双语例句
    GROWTH AND CHARACTERIZATION OF Hg_(1-x)Cd_x Te LPE FILMS
    液相外延生长Hg_(1-x)Cd_xTe薄膜及其特性分析
短句来源
    By using high temperature optical microscopy (HTOM), the superheating phenomenon in YBa_2Cu_3O_z (Y123) oxide thin film was found by in-situ observation of its melting process.
    在用YBa_2Cu_3O_z(YBCO)种膜液相外延生长Nd~(1+)xBa_)2-x_CuO_z(NdBCO)厚膜的过程中,YBCO晶体在高于熔点的温度下保持不熔化并且起到了外延种子的作用.
短句来源
    Liquid phase Epitaxy of LiNbO_3 thin film doped with Ag
    掺银的铌酸锂单晶薄膜液相外延生长
短句来源
    Silicon Single Crystal thin Layer Growth by Using Liquid Phase Epitaxy Technology
    硅单晶薄膜的液相外延生长
短句来源
    LPE Growth of SCH LD with Ultra-Thin Active Layer
    液相外延生长超薄有源层Al_xGa_(1-x)As/GaAs分别限制双异质结构激光器
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  liquid phase epitaxy
Isothermal liquid phase epitaxy of A3B5 compounds under excessive vapor pressure of the B5 component
      
Forsterite layers are grown by the method of liquid phase epitaxy from supercooled PbO-B2O3-based fluxes.
      
Morphological effects in liquid phase epitaxy (The C8H5O4K-C8H5O4Rb-H2O system)
      
The results obtained are used to create a theoretical model of formation of characteristic morphological textures in liquid phase epitaxy, including their formation from the aqueous solutions of the respective salts.
      
Epitaxial films grown by low-temperature liquid phase epitaxy on p-type 4H-SiC were used as strongly doped subcontact layers for making low-resistance contacts to the p-type material.
      
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The technology of the liquid phase epitaxy growing silicon single cry-stal thin layer is described in this article N-type silicon single crystalthin layers doped with Sn have been grown by isothermal liquid phaseepitaxy technique at 950 c Scaning electron microscope observation showthat the thickness of the layer grown by this method is homogeneousinterface between fhe layer and the substrat is distinct, The experimentalresuuets are good agreement with the works reported by other authors

本文提出了液相外延生长硅单晶薄膜的工艺,选择Sn为熔剂,在950℃的温度下等温液相外延生长了掺锑的型硅单晶薄膜,扫描电子显微镜观察表明生长的膜厚度比较均匀,膜与基片的边界比较明显,试验的结果表明与国外发表的工作较好地一致。

The general method to determine LPE parameters of single crytal garnet films was put forward. Some reasonable results were obtained for several experiments. The optimum value, as well as low limitation of growth temperature was achieved for high quality films.

提出了定量确定石榴石单晶膜液相外延生长的各项参数的一般方法,对若干实验得到了理想的数据。同时得出了生长优质膜的温度下限和最佳温度.

The recent progresses on the liquid epitaxial growth of REBCO (RE=rare earth) thick films are reviewed. The selection of substrates and seed films, the mechanism of the initial stage of LPE and the optimizing of supperconducting properties are crucial for the application of LPE on REBCO systems. It is demonstrated that the superheating phenomenon found in YBCO thin films in our group make it possible to grow the REBCO superconductor with high peritectic temperature on the a seed film with lower peritectic temperature,...

The recent progresses on the liquid epitaxial growth of REBCO (RE=rare earth) thick films are reviewed. The selection of substrates and seed films, the mechanism of the initial stage of LPE and the optimizing of supperconducting properties are crucial for the application of LPE on REBCO systems. It is demonstrated that the superheating phenomenon found in YBCO thin films in our group make it possible to grow the REBCO superconductor with high peritectic temperature on the a seed film with lower peritectic temperature, and then enlarge the selection of seed films. In the initial stage of LPE, the coarsening mechanism including the curvature effect and interfacial energy can explain many phenomena in the LPE growth, i.e. the partial dissolution of seed films, preferential growth associating with the RE species and the formation of inclusions. Some open questions in the LPE growth, such as Mg contamination, RE/Ba substitution and the crystallinity in the grown thick films, still need to be solved. Seed films with perfect in-plane alignment, the solution with suitable Ba/Cu ratios and the lower oxygen partial pressure are reported to aid to obtain the high-quality REBCO thick films.

本文从基片和种膜、LPE的初始阶段研究和超导性能的控制这三个方面回顾总结了液相外延生长REBCO(RE=稀土元素)厚膜的研究进展.我课题组发现的高温超导体氧化物YBCO的过热现象直接证实了采用低包晶熔点的YBCO种膜可以生长包晶温度较高的REB-CO,丰富了种膜的选择范围,此现象尤为值得关注.在LPE生长的初始阶段存在种膜的部分溶解、夹杂的形成和与稀土元素种类有关的择优生长等现象,用包括曲率效应和界面能影响的粗化机制可以解释以上现象.因而生长高结晶性的LPE厚膜时选用高品质的种膜甚为重要.为优化生长工艺,须考虑种膜的品质、熔剂中的Ba/Cu比和气氛对Mg的污染和结晶取向,RE离子对Ba的替代等方面问题,以达到获得高质量的REBCOLPE厚膜的目的.

 
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