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   液相外延生长 在 无线电电子学 分类中 的翻译结果: 查询用时:0.039秒
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液相外延生长
相关语句
  liquid phase epitaxial growth
    Liquid Phase Epitaxial Growth of In_(0.53)Ga_(0.47) As
    In_(0.53)Ga_(0.47)As的液相外延生长
短句来源
    Liquid phase epitaxial growth of large area Hg_(1-x)Cd_xTe epitaxial layers
    液相外延生长大面积Hg_(1-x)Cd_xTe外延层
短句来源
    Liquid Phase Epitaxial Growth Mechanism of Magnetic Garnet Films
    磁性石榴石薄膜的液相外延生长机理
短句来源
    In this thesis, some fundamental topics on p-SiC crystal growth such as the design of the crucible assembling system, the thermal field distribution and the liquid phase epitaxial growth of p-SiC films deposited on Si have been discussed. In brief, following major creative results have been obtained:
    本文探索β碳化硅晶体生长技术的若干基本问题,特别对热系统的设计和热场分布问题,以及用β-SiC薄膜在碳饱和硅熔体中进行液相外延生长的基本工艺问题等进行了研究,获得以下主要创新结果:
短句来源
  liquid phase epitaxy
    Growth of 1.3μm Double Heterostructure GaInAsP/InP by Liquid Phase Epitaxy
    液相外延生长1.3μm GaInAsP/InP双异质结
短句来源
    Study on Growth of 1.55μm GaInAsP Double Heterostructure by Low Temperature Liquid Phase Epitaxy on n-InP(100)Substrates
    在n—InP(100)衬底上低温液相外延生长1.55μm GaInAsP双异质结构层的研究
短句来源
    InAs0.96Sb0.04 infrared thin films were grown by liquid phase epitaxy on n-type(100) InAs substrate by using horizontally sliding multi-wells graphite boats.
    采用水平滑移石墨舟液相外延生长技术在n型(100)InAs衬底上生长了InAs0.96Sb0.04薄膜.
短句来源
    Growth of Cr,Ca∶YAG by Liquid Phase Epitaxy
    Cr,Ca∶YAG的液相外延生长
短句来源
    The growth of saturable absorber Cr 4+∶YAG crystals by liquid phase epitaxy (LPE) is reported. The absorption characteristics of this co-doped Cr,Ca∶YAG epilayer is analyzed.
    报道了可饱和吸收体Cr4+∶YAG的液相外延生长 ,对双掺杂Cr ,Ca∶YAG外延层的吸收特性进行了分析。
短句来源
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  “液相外延生长”译为未确定词的双语例句
    LPE Growth of Ga_(0.47)ln_(0.53)As/lnP on InP
    InP衬底上Ga_(0.47)In_(0.53)As/InP液相外延生长
短句来源
    The Liquid Epitaxy of a Cu_2O Doped LiNbO_3 Waveguide Chip
    掺Gu_2O铌酸锂光波导片的液相外延生长
短句来源
    LPE Growth of Ga_xIn_(1-x) P-GaAs
    Ga_xIn_(1-x)P-GaAs的液相外延生长
短句来源
    Growth and Doping Characteristics of Al_xGa_(1-x)As Grown by LPE at 780℃
    780℃下液相外延生长周Al_xGa_(1-x)As的生长和掺杂特性
短句来源
    LPE growth of n+InSb PHg_(1-x)Cd_xTe hetero junction
    n~+InSb/PHg_(1-x)Cd_xTe异质结的液相外延生长及红外探测器
短句来源
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  liquid phase epitaxial growth
In the crystal growth, it was found that the liquidus and solidus isotherms are affected by the orientation of InP source and substrate crystals in the liquid phase epitaxial growth of GaInAsP alloys.
      
The influence of holmium addition during the liquid phase epitaxial growth (LPE) on the optoelectronic properties of InP and GaInAsP semiconductor layers has been studied.
      
The influence of holmium addition during the liquid phase epitaxial growth (LPE) on the optoelectronic properties of InP and GaInAsP semiconductor layers has been studied.
      
We report on liquid phase epitaxial growth of thick layers of GaInP(As) lattice matched to GaAs.
      
We report on liquid phase epitaxial growth of thick layers of GaInP(As) lattice matched to GaAs.
      
更多          
  liquid phase epitaxy
Isothermal liquid phase epitaxy of A3B5 compounds under excessive vapor pressure of the B5 component
      
Forsterite layers are grown by the method of liquid phase epitaxy from supercooled PbO-B2O3-based fluxes.
      
Morphological effects in liquid phase epitaxy (The C8H5O4K-C8H5O4Rb-H2O system)
      
The results obtained are used to create a theoretical model of formation of characteristic morphological textures in liquid phase epitaxy, including their formation from the aqueous solutions of the respective salts.
      
Epitaxial films grown by low-temperature liquid phase epitaxy on p-type 4H-SiC were used as strongly doped subcontact layers for making low-resistance contacts to the p-type material.
      
更多          


Our apparatus for multilayer liquid phase epitaxy is described. Factors relating to the thin layer LPE growth are discussed. The epitaxy experiments are arranged to take advantage of the mathe- matical method of orthogonal process design. The regime of continuous and uniform growth has been found for the purpose of improving the threshold current density of GaAs-Ga1-xAlx As DH lasers up to 1000-2000A/cm2.

介绍我们采用的多次液相外延实验装置,讨论影响薄层液相外延生长的因素。采用 “正交设计”的数学方法安排外延试验,找到多层连续均匀生长的条件.使GaAs- Ga1-xAlxAs双异质结激光器阈值电流密度达到 1000—2000安培/平方厘米。

GalnAsP/InP double-heterojunction material was grown by twophase LPE. Small area LEDs with output power of 1mW and emission wavelength of 1,3 μm at a forward current of 100mA were made from the wafers for fiber-optical communications. Epitaxial process and factors affecting property of the material were discussed.

用二相法液相外延生长了GaInAsP/InP双异质结材料。已制得用于光通讯的、小面积的、输出功率>1mW(工作电流100mA)的发光二极管。讨论了外延工艺和影响材料性质的因素。

GaAs-Al_xGa_(1-x)As heterostructure grown by liquid phase epitaxy (LPE) has beenstudied by Auger electron spectroscope.The results show that at the interface of theheterostructure there is always a graded layer in which the composition varies mono-tonically from one side of the layer to the other.The thickness of the graded layerdepends on the saturation level of the solution.The eomtamination at the surface ofthe specimens has also been analysed.

采用俄歇电子能谱仪(AES)对液相外延生长的GaAs-AlxGa_(1-x)As异质结构进行了研究.结果表明,在异质结界面处,有一过渡层,其组分由异质结的一边向另一边单调地变化,该层的厚度依赖于溶液的饱和度.还对样品表面的沾污情况进行了观测.

 
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