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单晶金刚石膜的
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  epitaxial diamond films
     The crystallinity of polycrystalline diamond films and epitaxial diamond films were examined by scanning electron microscopy (SEM), micro laser Raman spectroscopy and reflection electron diffraction (RED).
     选用扫描电镜、显微激光拉曼、反射电子衍射对多晶金刚石膜及单晶金刚石膜的性能进行了测试。
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  “单晶金刚石膜的”译为未确定词的双语例句
     This paper presented the experimental results of synthesized diamond film in atmosphere by thecombustion flame of oxyacetylene. The influence of substrate temperature on diamond growth rate and crystalhabit was studied. The temperature range of epitaxial single-crystal diamond film on the(111)and(100)sur-faces of diamond,and the influence of oxygen contents in flame on the homogeneity of diamond film were des-cribed.
     本文介绍了用氧-乙炔火焰法在大气下合成金刚石薄膜的实验结果,初步研究了基板温度对金刚石晶体生长速度、结晶习性的影响,指出了在金刚石(111)及(100)晶面上外延单晶金刚石膜的温度范围,还探讨了氧对薄膜的质量均匀性的影响。
短句来源
  相似匹配句对
     Application of C V D diam ond film isproposed. Key w ords  Chem ical vapor deposition, Diam ond f
     C V D 金刚石膜的应用。
短句来源
     MONOCRYSTAL DIAMOND TOOLS
     单晶金刚石工具
短句来源
     The Investagation in Stress of Diamond Film
     金刚石膜的内应力研究
短句来源
     The machining of single crystal diamond tool
     单晶金刚石刀具的加工
短句来源
     GROWTH PROCESSES AND CHARACTERISTICS OF POLYCRYSTALLINE DIAMOND FItLMS AND EPITAXIAL DIAMOND FILMS
     单晶金刚石膜与多晶金刚石膜的制备工艺及性能
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  epitaxial diamond films
Growth and structure of epitaxial diamond films grown on Si(111) single crystals
      
It was found that hetero-epitaxial diamond films have been grown on the c-BN from iron carbide.
      


This paper presented the experimental results of synthesized diamond film in atmosphere by thecombustion flame of oxyacetylene.The influence of substrate temperature on diamond growth rate and crystalhabit was studied.The temperature range of epitaxial single-crystal diamond film on the(111)and(100)sur-faces of diamond,and the influence of oxygen contents in flame on the homogeneity of diamond film were des-cribed.

本文介绍了用氧-乙炔火焰法在大气下合成金刚石薄膜的实验结果,初步研究了基板温度对金刚石晶体生长速度、结晶习性的影响,指出了在金刚石(111)及(100)晶面上外延单晶金刚石膜的温度范围,还探讨了氧对薄膜的质量均匀性的影响。

The growth processes and characteristics of polycrystalline diamond films and epitaxial diamond films by microwave plasma CVD (Chemical Vapor Deposition) method are presented in the paper. Polycrystalline diamond films, 20mm×20mm in area and 10μm thick, on silicon (111) substrates and epitaxial diamond films, 1.0mm×1.0mm in area and 5μm thick on (100) planes of synthesized single-crystal diamond substrates were prepared respectively. For the source gases, i.e. CH_3OH, CH_3COCH_3 and H_2 gases of different carbon...

The growth processes and characteristics of polycrystalline diamond films and epitaxial diamond films by microwave plasma CVD (Chemical Vapor Deposition) method are presented in the paper. Polycrystalline diamond films, 20mm×20mm in area and 10μm thick, on silicon (111) substrates and epitaxial diamond films, 1.0mm×1.0mm in area and 5μm thick on (100) planes of synthesized single-crystal diamond substrates were prepared respectively. For the source gases, i.e. CH_3OH, CH_3COCH_3 and H_2 gases of different carbon concentrations (CH_3OH/H_2,CH_3COCH_3/H_2) were usel. The quality of diamond films depends on substrates temperature, CH_3OH or CH_3COCH_3 concentration of the source gas and the position of substrates in reaction chamber. The growth and the quality of the epitaxial diamond films are related to crystal orientations of dia mand substrates considerably, Different substfate orientations are necessary for different processes. Epitaxial diamond films and polycrystalline diamond grain were obtained on(100), (110) and(111) surface of synthesized single-crystal diamond substrates. The crystallinity of polycrystalline diamond films and epitaxial diamond films were examined by scanning electron microscopy (SEM), micro laser Raman spectroscopy and reflection electron diffraction (RED).

本文主要介绍了用微波等离子体化学气相沉积法(以下简称MP CVD法)以甲醇-氢气混合气和丙酮-氢气混合气为源气体,分别以单晶硅的(111)面和人造金刚石的(100)面为衬底材料,制备出了面积为20mm×20mm厚为10μm的多晶金刚石膜和面积为1.0mm×1.0mm厚为5μm的单晶金刚石膜。通过试验发现,源气体配比和衬底温度对薄膜质量起决定性作用。另外,衬底在反应腔中的位置对薄膜的生成也有很大影响。单晶金刚石膜制备过程中衬底金刚石的晶体取向与金刚石薄膜的生长及质量有密切的关系。在金刚石的(100),(110)和(111)面上分别获得了单晶金刚石膜和金刚石多晶粒子。选用扫描电镜、显微激光拉曼、反射电子衍射对多晶金刚石膜及单晶金刚石膜的性能进行了测试。

In this paper,the relationship between the crystal face index and the film quality in the vapor epitaxial growth of single crystal diamond film is analyzed,and it points out that the key factor which insures the film quality is to control the experimental conditions.

分析了气相同质外延单晶金刚石膜中晶面指数与薄膜品质的关系 ,指出了控制实验条件是确保各晶面薄膜品质的关键 .

 
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