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金刚石薄膜的形核与生长
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  diamond nucleation and growth
     The results also suggest that too low aluminum concentration on the substrate surface or too high deposition temperature are detrimental to diamond nucleation and growth.
     而试样表面过低的铝含量及过高的沉积温度不利于金刚石薄膜的形核与生长
短句来源
  相似匹配句对
     NUCLEATION AND GROWTH PROCESS OF TEXTURED DIAMOND FILMS
     织构金刚石薄膜的成核生长
短句来源
     NUCLEATION AND GROWTH OF CVD DIAMOND
     CVD金刚石形核生长
短句来源
     GRADATIONAL GROWTH OF DIAMOND THIN FILMS
     金刚石薄膜的分层生长
短句来源
     Research of the Diamond Film Nucleation
     金刚石薄膜的形核研究
短句来源
     Synthesis and Characterization of Diamond Thin Films(DTF)
     金刚石薄膜的制备评价
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  diamond nucleation and growth
Experiments at 6.0-7.1 GPa and 1500-1700°C were carried out to explore the boundary conditions of diamond nucleation and growth in pyrrhotite-carbon melt-solutions.
      
Mechanisms of CVD diamond nucleation and growth on mechanically scratched Si(100) surfaces
      
The presence of various hydrocarbon species in the plasma and their reaction with atomic, excited or molecular hydrogen on the substrate surface decide the mechanism of diamond nucleation and growth.
      
Effect of deposition conditions on diamond nucleation and growth.
      
In this effort, static magnetic fields in excess of 15 T are observed to direct these carbon and metal intermediary microstates to promote nano-diamond nucleation and growth at atmospheric pressure and temperature of 900°C.
      
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Diamond films were deposited on 45 steel surface using aluminized transition layer by a microwave plasma chemical vapor deposition(MPCVD) equipment.The effects of Al content in the aluminized layer on the quality of diamond films were investigated.SEM,energy dispersive X ray analyzer (EDAX) and Raman analyses spectra show that intermetallic compounds such as FeAl formed in the aluminized layer,can restrain the diffusion of carbon into the bulk substrate and prevent the formation of non diamond phase when the...

Diamond films were deposited on 45 steel surface using aluminized transition layer by a microwave plasma chemical vapor deposition(MPCVD) equipment.The effects of Al content in the aluminized layer on the quality of diamond films were investigated.SEM,energy dispersive X ray analyzer (EDAX) and Raman analyses spectra show that intermetallic compounds such as FeAl formed in the aluminized layer,can restrain the diffusion of carbon into the bulk substrate and prevent the formation of non diamond phase when the substrate temperature is low,and hence help to deposite with high quality.The results also suggest that too low aluminum concentration on the substrate surface or too high deposition temperature are detrimental to diamond nucleation and growth.

在微波等离子体化学气相沉积 (MPCVD)装置中 ,以 4 5钢钢板上的渗铝层作为过渡层 ,制备金刚石薄膜。研究了基体表面不同的铝含量对金刚石膜质量的影响。扫描电子显微镜 (SEM )、能谱和Raman谱测试表明 ,渗铝层中的FeAl等金属间化合物在低温沉积时能减弱碳向基体的扩散 ,防止非金刚石相碳的出现 ,从而有利于高质量的金刚石薄膜的沉积。而试样表面过低的铝含量及过高的沉积温度不利于金刚石薄膜的形核与生长

 
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