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金刚石膜的成核和生长
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  diamond nucleation and growth
     The diamond nucleation and growth on Si substrate by hot filament chemical vapor deposition(HFCVD) at the low temperature(~550℃) and low pressure(~7 Torr) were studied.
     用热丝化学气相沉积方法研究了低温(~550℃)和低反应气压(~7 Torr)下硅片上金刚石膜的成核和生长.
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  相似匹配句对
     Nucleation and Growth of Oriented Diamond Films on Nickel Substrates
     镍衬底上定向金刚石膜的成核生长
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     NUCLEATION AND GROWTH PROCESS OF TEXTURED DIAMOND FILMS
     织构金刚石膜的成核生长
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     Studies of Diamond Film on the Silicon Tips Array
     硅微尖上金刚石膜的生长
短句来源
     DEPOSITION AND HIGH-ORIENTED GROWTH OF DIAMOND FILMS
     金刚石膜的制备高取向生长
短句来源
     NUCLEATION AND GROWTH MECHANISMS OF DIAMOND FILM ON SILICON SUBSTRATE
     Si衬底上金刚石膜的成核生长机理
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  diamond nucleation and growth
Experiments at 6.0-7.1 GPa and 1500-1700°C were carried out to explore the boundary conditions of diamond nucleation and growth in pyrrhotite-carbon melt-solutions.
      
Mechanisms of CVD diamond nucleation and growth on mechanically scratched Si(100) surfaces
      
The presence of various hydrocarbon species in the plasma and their reaction with atomic, excited or molecular hydrogen on the substrate surface decide the mechanism of diamond nucleation and growth.
      
Effect of deposition conditions on diamond nucleation and growth.
      
In this effort, static magnetic fields in excess of 15 T are observed to direct these carbon and metal intermediary microstates to promote nano-diamond nucleation and growth at atmospheric pressure and temperature of 900°C.
      
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Gas phase chemistry in C-H-O and C-H-N systems was simulated. Phase diagrams for chemical vapor deposition diamond films with oxygen-containing and nitrogen-containing feed gases were successfully constructed. The influences of oxygen and nitrogen addition on diamond growth were also discussed. It is shown methyl is the dominant diamond growth precursor, acetylene contributes to non-diamond carbon deposition and atomic hydrogen etches non-diamond carbon. Oxygen addition varies the concentrations of these radicals,...

Gas phase chemistry in C-H-O and C-H-N systems was simulated. Phase diagrams for chemical vapor deposition diamond films with oxygen-containing and nitrogen-containing feed gases were successfully constructed. The influences of oxygen and nitrogen addition on diamond growth were also discussed. It is shown methyl is the dominant diamond growth precursor, acetylene contributes to non-diamond carbon deposition and atomic hydrogen etches non-diamond carbon. Oxygen addition varies the concentrations of these radicals, which influences diamond growth. Nitrogen addition varies their concentrations as well as produces nitrogen-containing radicals such as CN, which participate in surface chemistry in diamond nucleation and growth.

数值模拟了C-H-O和C-H-N体系的气相化学,构建了含氧和含氮气源化学气相沉积金刚石膜的三元相图,探讨了加氧和加氮影响金刚石膜生长的途径.结果表明,甲基是金刚石生长主要的前驱基团,乙炔导致非金刚石碳沉积,原子氢刻蚀非金刚石碳.通过气相反应改变这些基团的浓度是加氧的一个重要作用途径,而加氮在改变这些基团浓度的同时,CN等含氮基团还强烈地参与了金刚石膜成核和生长的表面过程.

The diamond nucleation and growth on Si substrate by hot filament chemical vapor deposition(HFCVD) at the low temperature(~550℃) and low pressure(~7 Torr) were studied.Nucleation density(ND) as high as 1.5×10~(11)cm~(-2) was obtained on well ultrasonically pretreated substrate at the nucleation conditions of 2.5% CH_4/H_2.Diamond grain sizes change form sub-micron to nano-meter scales with the increase of CH_4 concentration.Smooth ultra-thin(thickness<500 nm) nano-crystalline diamond(NCD) films with grain sizes...

The diamond nucleation and growth on Si substrate by hot filament chemical vapor deposition(HFCVD) at the low temperature(~550℃) and low pressure(~7 Torr) were studied.Nucleation density(ND) as high as 1.5×10~(11)cm~(-2) was obtained on well ultrasonically pretreated substrate at the nucleation conditions of 2.5% CH_4/H_2.Diamond grain sizes change form sub-micron to nano-meter scales with the increase of CH_4 concentration.Smooth ultra-thin(thickness<500 nm) nano-crystalline diamond(NCD) films with grain sizes less than 50 nm and surface roughness as low as 4nm have been synthesized.The adhesion between the film and substrate is good.The optical absorption coefficient in visible(VIS)to infrared(IR) wavelength range is less than 2×10~4cm~(-1).Smooth ultra-thin NCD films can be synthesized at low temperature and low pressure by our conventional HFCVD technique.

用热丝化学气相沉积方法研究了低温(~550℃)和低反应气压(~7 Torr)下硅片上金刚石膜的成核和生长.成核过程中采用2.5%的CH4浓度,在经充分超声波预处理的硅片上获得了高达1.5×1011cm-2的成核密度.随CH4浓度的增加所成膜中的金刚石晶粒尺寸由亚微米转变到纳米级.成功合成了表面粗糙度小于4nm、超薄(厚度小于500nm)和晶粒尺寸小于50nm的纳米金刚石膜.膜与衬底结合牢固.膜从可见光至红外的光吸收系数小于2×104cm-1.用我们常规的HFCVD技术,在低温度和低压下可以生长出表面光滑超薄的纳米金刚石膜.

 
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