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金刚石成核和生长
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  diamond nucleation and growth
     By studying the uniqueness of powder Fe Ni eatalyst alloy, the authors established a model for diamond nucleation and growth, and discussed main factors affecting diamond nucleation and growth.
     通过对Fe Ni粉状触媒的独特性研究 ,提出了金刚石成核和生长模型 ,并探讨了粉状触媒在金刚石成核和生长过程中的主要影响因素。
短句来源
     The effects were studied of Si 3N 4 tool substrate pretreatment in ultrasonic, polishing of fine gained SiC emery paper, 1.0 μm and 0.5 μm diamond powder on the quality of MPCVD diamond coating in a domestic 2 450 MHz, 5 kW stainless steel resonant cavity microwave plasma CVD (MPCVD) equipment. The quality of diamond nucleation and growth was measured, then the stress condition was analysed, at last the adhesion of diamond coating in contrast cutting test was determined.
     采用自制 2 4 50MHz ,5kW不锈钢谐振腔型微波等离子体设备 ,研究了超声处理、细砂纸研磨、1 μm和 0 .5μm金刚石粉研磨等Si3N4基底预处理方法对MPCVD金刚石涂层质量的影响 ,用SEM和Raman光谱仪检测和分析了金刚石成核和生长质量 ,分析了金刚石的应力情况 ,用对比切削实验检测了金刚石涂层的附着情况。
短句来源
  “金刚石成核和生长”译为未确定词的双语例句
     Based on the results and effects of the film, dissolving carbon and catalyzing, it can be illustrated that carbon for forming and growing of diamond comes from the atom groups decomposed from (Fe,Ni) 3C phase in the film near diamond at high temperature and high pressure. Decomposed (Fe,Ni) 3C is transformed into γ -(Fe,Ni), meanwhile there is a parallel plane relationship between residual (Fe,Ni) 3C and γ -(Fe,Ni).
     据此并结合包膜所起的溶碳和催化作用分析 ,在高温高压下 ,金刚石成核和生长的碳来源于靠近金刚石的包膜层 (Fe,Ni) 3C的分解产物 ,分解后的 (Fe,Ni) 3C转变为γ -(Fe,Ni) ,这时的γ -(Fe ,Ni)与未分解的 (Fe,Ni) 3C保持晶面平行关系
短句来源
     In order to investigate the effect of disc and powder catalysts including nickel base and iron base on graphite transition to diamond,the activation energy and specific surface energy for diamond growth in the presence of the two catalysts were calculated using a kinetics approach.
     为了研究片状与粉末的镍基或铁基触媒对石墨转化为金刚石的催化性能的影响,采用金刚石成核和生长动力学方法分别计算了片状与粉末触媒参与下金刚石生长的活化能与比表面能。
短句来源
  相似匹配句对
     NUCLEATION AND GROWTH PROCESS OF TEXTURED DIAMOND FILMS
     织构金刚石薄膜的成核生长
短句来源
     NUCLEATION AND GROWTH MECHANISMS OF DIAMOND FILM ON SILICON SUBSTRATE
     Si衬底上金刚石薄膜的成核生长机理
短句来源
     Nucleation and Growth of Oriented Diamond Films on Nickel Substrates
     镍衬底上定向金刚石膜的成核生长
短句来源
     Phase Diagrams in C-H-N System for Low Pressure CVD Diamond Growth
     C-H-N体系生长金刚石薄膜
短句来源
     THEORETICAL STUDY OF NUCLEATION MECHANISM IN DIAMOND THIN FILMS GROWTH BY LOW PRESSURE VAPOR PHASE
     低压气相生长金刚石薄膜成核机理的研究
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  diamond nucleation and growth
Experiments at 6.0-7.1 GPa and 1500-1700°C were carried out to explore the boundary conditions of diamond nucleation and growth in pyrrhotite-carbon melt-solutions.
      
Mechanisms of CVD diamond nucleation and growth on mechanically scratched Si(100) surfaces
      
The presence of various hydrocarbon species in the plasma and their reaction with atomic, excited or molecular hydrogen on the substrate surface decide the mechanism of diamond nucleation and growth.
      
Effect of deposition conditions on diamond nucleation and growth.
      
In this effort, static magnetic fields in excess of 15 T are observed to direct these carbon and metal intermediary microstates to promote nano-diamond nucleation and growth at atmospheric pressure and temperature of 900°C.
      
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Diamond crystals and thin films have been deposited on the edge and angleareas of silicon substrate and on the stripe-shape substrate, by hot-filament-activated chemical vapor deposition. The effects of geometry of substrate on deposition process were studied,and nucleation and growth mechanism of diamondwere also discussed.

利用灯丝热解化学汽相沉积技术在硅基底的边缘、角域处及条形基底上生长出金刚石晶体和薄膜,研究了基底几何尺寸对金刚石沉积过程的影响,探讨了金刚石成核和生长的机理。

A new lateral deposition system was designed based on the tra-

将传统的灯丝热解化学气相沉积系统改装成侧向沉积系统,并在其中进行了金刚石薄膜的正、侧向沉积。研究表明,侧向沉积的成核密度和生长率与正向沉积的情况基本相同,而侧向沉积系统中金刚石颗粒和薄膜的沉积速率要比传统的沉积系统的高,但结构更趋复杂。讨论了侧向基底对金刚石成核和生长过程的影响,深化了金刚石沉积机理的理解。

The promotion of diamond nucleation by predeposition of amorphous carbon in Hot-filament chemical vapor deposition system was studied. The feature and mechanism of diamond nucleation were analysed, and the condition for diamond nucleation on predeposited amorphous carbon was also investigatal.Through predeposition of amorphous carbon, the nucleation and growth of diamond on carbide substrate YG8 were realized.

研究了热丝CVD系统中预沉积无定形碳对金刚石成核的促进作用,分析了金刚石成核的特征和机理,探索了无定形碳上金刚石成核的条件,并由此实现了YG8硬质合金上金刚石的成核和生长。

 
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