For fabricating semiconductor optical amplifier of polarization insensitive, a structure of the active layer was designed that is strain compensation with alternate 4 compressive and 3 tensile strain quantum wells and lattice-matched barrier layer.
An active structure containing InGaAs compressive wells and tensile quai bulk layers is adopted to fabricate broadband polarization insensitive semiconductor optical amplifier.
Based on the unusual features of the ultrahigh-order modes,wavelength-sensitive and polarization-insensitive,ultra-narrow bandwidth filtering(0.08 nm) and comb filtering(channel spacing 100 GHz) with tunable,low loss(0.5 dB) and polarization-insensitive operation capabilities are demonstrated experimentally.
Graded strained bulk like structure as semiconductor optical amplifier active region is proposed for the first time. Large band width and polarization insensitivity characteristics for such active structure are analyzed from the point of its gain spectra and energy band diagram.
By selecting appropriate refractive index and thickness of the antireflection film, the reflectivity of TM mode is larger than that of TE mode in a range of wavelength, such a reflectivity distribution can increase the gain of TM mode relatively, improve the polarization insensitivity of SOA and give SOA more flexibility in designing active region and waveguide to meet the requirements needed by other performances.
Based on the unusual features of the ultrahigh-order modes, very narrow bandwidth filtering and comb filtering with tunable and polarization-insensitive operation capabilities are demonstrated experimentally.
Based on the unusual features of the ultrahigh-order modes, very narrow bandwidth filtering and comb filtering with tunable and polarization-insensitive operation capabilities are demonstrated experimentally.
Polarization Insensitive Wavelength Conversions by a LiNbO3 Waveguide Using a Multi-Ring Configuration
A novel configuration is proposed for polarization insensitive wavelength conversions using a LiNbO3 waveguide with a periodically domain inverted structure.
We explain how thin strained GaAs layers embedded in a lattice-matched InGaAsP/InGaAs quantum well can be used to achieve polarization insensitive optical amplification.
We describe also the interaction between pulse propagation and gain compression within a pump-probe excitation in polarization insensitive MQW-SOA.
In this paper, we assume that all the amplifiers are polarization insensitive and is set to two in our calculation.
The polarization characteristics of Travelling-wave semiconductor optical amplifier (TW-SOA) is investigated based on th gain property of active Fabry-Perot resonator. Theoretical analysis and experimental research of polarization sensitivity is presented including the influences of residual facet reflectivities, gain coefficient, optical mode confinement factors, etc. Some improving methods for polarization sensitivity are discussed according to the analysis and a novel polarization insensitive TW-SOA is proposed....
The polarization characteristics of Travelling-wave semiconductor optical amplifier (TW-SOA) is investigated based on th gain property of active Fabry-Perot resonator. Theoretical analysis and experimental research of polarization sensitivity is presented including the influences of residual facet reflectivities, gain coefficient, optical mode confinement factors, etc. Some improving methods for polarization sensitivity are discussed according to the analysis and a novel polarization insensitive TW-SOA is proposed.
The spectral characteristics of all fiber Mach Zehnder interferometer structure are analyzed, and the all fiber dense wavelength division multiplexers (DWDM) with the smallest spacing channel of 0.45 nm are fabricated, using the equipment which we designed for fabricating coupler. The Fabricated DWDM operating wavelength in the range from 1530 to 1570 nm exhibits ultra low loss, polarization insensitivity, and good temperature and mechanism stability.
This paper briefly describes the principle of high power acousto-optical Qswitch. Design keys are unpolarized. ratio of optical angular spread and acoustic angular spread. diffraction efficiency and super acoustic frequency. Described key technology and proper constructures
偏振不灵敏的
polarization insensitive
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