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高压终端
相关语句
  high voltage termination
     Study on planar high voltage termination of IGBT
     IGBT平面高压终端结构的研究
短句来源
     Since the breakdown voltage is a very important parameter for IGBT, people always attach importance to the research of IGBT's high voltage termination structure.
     耐压是 IGBT的一个重要参数 ,所以其高压终端结构的研究一直受到人们的重视。
短句来源
  “高压终端”译为未确定词的双语例句
     A Boundary Element Numerical Method for Analysis of Field in High-Voltage Junction Termination
     高压终端结构场分析边界元数值方法
短句来源
     Furthermore,the related key techniques of obtaining a high voltage IGBT have been identified,which are accurate design and optimization of the device longitudinal and lattitudinal structure and electrical parameters,technological preparation of high quality thick Si layers with low defect levels,and formation of the composite junction-termination by both superposition and combination.
     并进而证实了获得高压IGBT相互关联的关键技术——器件纵向横向几何结构及工作参数的准确计量优化,低缺陷密度高性能厚层硅材料的工艺生长技术,和复合高压终端结构的叠加组合形成。
短句来源
     Experiments of chips and terminals with IGBT have been performed. Two kinds of terminal have been verified for 1 000-1 200 V IGBT. A 10 A/1 150 V IGBT has been obtained.
     实验验证了两种用于1000~1200VIGBT的高压终端,研制的芯片获得了7.5A,耐压1150V的实验结果。
短句来源
     According to the shortcoming of FLR(Field Limiting Ring) and FP(Field Plate), this paper presents a mixed termination structure about FLR and FP.
     针对常规采用的场限制保护环法和场板法高压终端结构的缺陷 ,本文提出了场板混合终端结构。
短句来源
  相似匹配句对
     The Latest Development in the Design of HV Cable Termination
     高压电缆终端设计的新进展
短句来源
     Development in the design of HV cable termination
     高压电缆终端结构设计的进展
短句来源
     Terminal Sales Modes of Jewelry
     终端突围
短句来源
     HIGH PRESSURE HEAT EXCHANGER
     高压换热器
短句来源
     Artificial Intelligence Terminal
     智能终端
短句来源
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The planar power device's capability of blocking high voltage is limited due to the curvature effects resulting from its terminal p-n junction. The physical principle of metal field-limited-rings has been studied and analyzed to achieve higher breakdown voltage. The structure parameters of the metal ring are designed. The processing technology for metal field-limited-rings is described and test results are given. A comparison with diffused field-limited-rings shows that the metal field-limited-ring is easier...

The planar power device's capability of blocking high voltage is limited due to the curvature effects resulting from its terminal p-n junction. The physical principle of metal field-limited-rings has been studied and analyzed to achieve higher breakdown voltage. The structure parameters of the metal ring are designed. The processing technology for metal field-limited-rings is described and test results are given. A comparison with diffused field-limited-rings shows that the metal field-limited-ring is easier to make and less sensitive to process variations.

平面功率器件由于终端pp结的曲率效应,其高压阻断能力受到限制,为了提高高压阻断能力,本文研究了金属场限环的工作机理,进行了金属场限环结构参数的设计,阐述了其制造工艺和实验结果;并和扩散场限环进行了比较,证实了金属场限环是一种工艺简单、对工艺要求低的高压终端技术。

Based on the theoretical analysis and experimental studies,a 1300V and a 1600V IGBT were realized by making use of n-/n+/p+ epitaxial layers and bulk silicon material,respectively.Furthermore,the related key techniques of obtaining a high voltage IGBT have been identified,which are accurate design and optimization of the device longitudinal and lattitudinal structure and electrical parameters,technological preparation of high quality thick Si layers with low defect levels,and formation of the composite junction-termination...

Based on the theoretical analysis and experimental studies,a 1300V and a 1600V IGBT were realized by making use of n-/n+/p+ epitaxial layers and bulk silicon material,respectively.Furthermore,the related key techniques of obtaining a high voltage IGBT have been identified,which are accurate design and optimization of the device longitudinal and lattitudinal structure and electrical parameters,technological preparation of high quality thick Si layers with low defect levels,and formation of the composite junction-termination by both superposition and combination.

本文基于理论分析和实验研究,分别在n~-/n~+/p~+外延和硅单晶基片上实现了1300V及1600V高压IGBT;并进而证实了获得高压IGBT相互关联的关键技术——器件纵向横向几何结构及工作参数的准确计量优化,低缺陷密度高性能厚层硅材料的工艺生长技术,和复合高压终端结构的叠加组合形成。

A fundamental Boundary Element Method(BEM) applied in Junction Termination Technigue(JTT) is presented from a new point of view. The precision and other characters of numericalsolutions are discussed through a typical example.In comparision with Finite DeffetrenceMethod and Finite Element Method, BEM has higher precision, simplicity and is verysuitable for the high reverse voltage case.

本文从全新的角度出发,提出了在高压终端结构数值场分析中运用边界元的基本方法,并通过典型算例讨论了数值解的精度等基本特征。与差分和有限元方法相比,边界元具有精度高,方法简便,特别适用于高压等明显优点。

 
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