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肖特基器件
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  schottky device
     Influence of Wirebonding to the Forward Voltage Drop of Schottky Device
     压焊方式对肖特基器件通态压降的影响
短句来源
     In the retral encapsulation process of semiconductor device, the different wirebonding results in different contact area between the Al and Schottky junction, and then induces different contact resistance, ultimately influences the forward voltage drop of Schottky device.
     在半导体器件的后部封装工艺中,不同的压焊方式会导致不同的铝丝和肖特基结接触面积,从而导致不同的接触电阻,最终影响肖特基器件的通态压降。
短句来源
  “肖特基器件”译为未确定词的双语例句
     (2) It is possible to modify the barrier height of Schottky devices by using LB thin films as insulators.
     (2)以LB薄膜作为绝缘层可调整肖特基器件势垒高度。
短句来源
     Finally, the 2DHG effects on p-GaN/AlGaN/GaN Schottky photodetector were investigated.
     在此基础上制备了p型GaN/Al0·35Ga0·65N/GaN应变量子阱结构肖特基器件,并通过器件的C-V测试证实了异质结处2DHG的存在.
短句来源
  相似匹配句对
     SBD & SCT Models and Their Applications
     肖特基半导体器件的模型及其应用
短句来源
     THE EXPERIMENTAL RESEARCH OF SCHOTTKY BARRIERS FOR MILLIMETER BAND DEVICES
     毫米波器件肖特基势垒的实验研究
短句来源
     Schottky Mass Spectroscope
     肖特基质谱仪
短句来源
     Protection Devices
     保护器件
短句来源
     Schottky I~2L
     肖特基I~2L
短句来源
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  schottky device
Photocurrent characteristics of a double junction Au/Cu2O/Mo Schottky device
      
Si nanowires, under certain conditions show I-V characteristics of a back-to-back schottky device.
      


C-V and I-V characteristics of ultratllin metal/LB insulating films/semiconductor structure are studied. Theoretical analysis are well in accord with experimental results. The results indicate that: (1) Ultrathin MLS structure has normal C-V and I-V characteristics; (2) It is possible to modify the barrier height of Schottky devices by using LB thin films as insulators.

本文研究了超薄的金属/LB绝缘膜/半导体(MLS)结构的C-V和I-V特性,理论分析与实验结果相一致,结论如下:(1)超薄MLS结构具有正常的C-V特性和I-V特性;(2)以LB薄膜作为绝缘层可调整肖特基器件势垒高度。

In the retral encapsulation process of semiconductor device, the different wirebonding results in different contact area between the Al and Schottky junction, and then induces different contact resistance, ultimately influences the forward voltage drop of Schottky device. According to the formula of V-I of Schottky device, we get the different contact resistance by means of curve fitting based on MATLAB. The reasonable wirebonding has been chosen through experiment in order to enhance the yield of the 80CPQ020...

In the retral encapsulation process of semiconductor device, the different wirebonding results in different contact area between the Al and Schottky junction, and then induces different contact resistance, ultimately influences the forward voltage drop of Schottky device. According to the formula of V-I of Schottky device, we get the different contact resistance by means of curve fitting based on MATLAB. The reasonable wirebonding has been chosen through experiment in order to enhance the yield of the 80CPQ020 Schottky rectifier module.

在半导体器件的后部封装工艺中,不同的压焊方式会导致不同的铝丝和肖特基结接触面积,从而导致不同的接触电阻,最终影响肖特基器件的通态压降。根据肖特基器件的电流鄄电压关系式,用MATLAB曲线拟合的方式求出了不同压焊方式下的接触电阻。通过实验选取合理的压焊方式,可极大地提高器件的合格率。

In this paper, the two_dimensional hole gas (2DHG) induced in the heterojunction were investigated in detail. The density of the 2DHG was calculated at first, then, based on the semiconductor-insulator-semiconductor and superlattice critical thickness model and using the self consistent Poisson-Schrdinger calculations, the influence of the AlGaN barrier and the top GaN layer thickness on the distribution of the 2DHG were calculated when the barrier layer is fully strained and half strained. The Schottky device...

In this paper, the two_dimensional hole gas (2DHG) induced in the heterojunction were investigated in detail. The density of the 2DHG was calculated at first, then, based on the semiconductor-insulator-semiconductor and superlattice critical thickness model and using the self consistent Poisson-Schrdinger calculations, the influence of the AlGaN barrier and the top GaN layer thickness on the distribution of the 2DHG were calculated when the barrier layer is fully strained and half strained. The Schottky device with this structure was fabricated and C-V measurement was made to verify the existence of the 2DHG and the validity of calculation results. Finally, the 2DHG effects on p-GaN/AlGaN/GaN Schottky photodetector were investigated. Due to the polarization and Stark effect, the spectral responses with the 10nm blue shift are observed. Under zero bias, the peak responsivity of the device is about 0.022A/W, and increases to 0.19A/W under 1V reverse bias, which approaches the theoretical limit.

对Ga面p型GaN/Al0·35Ga0·65N/GaN应变异质结构中形成的二维空穴气(2DHG)进行了研究.首先基于半导体-绝缘体-半导体异质结构模型确定了应变异质中的临界厚度,然后自洽求解薛定谔方程和泊松方程,计算了当中间势垒层AlGaN处于完全应变状态和半应变状态两种条件下,顶层GaN及中间层AlGaN厚度的变化对2DHG分布的影响.计算结果表明,势垒层AlGaN和顶层GaN的应变状态和厚度对极化引起的2DHG面密度及分布有重要影响.在此基础上制备了p型GaN/Al0·35Ga0·65N/GaN应变量子阱结构肖特基器件,并通过器件的C-V测试证实了异质结处2DHG的存在.器件响应光谱的测试结果表明,由于p型GaN/Al0·35Ga0·65N/GaN量子阱中强烈的极化作用和Stark效应使得器件零偏压和反向偏压时的响应光谱都向短波方向移动了10nm,在零偏压下器件在280nm处的峰值响应为0·022A/W,在反向偏压为1V时,峰值响应达到0·19A/W,已经接近理论值.

 
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