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碳化硅晶体
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  sic crystal
     Development of SiC Crystal Growth Equipment
     碳化硅晶体生长设备的研制
短句来源
     With the increasingly development of semiconductor industry, single crystal silicon, SiC crystal have been applied to this domain extensively.
     随着半导体工业的飞速发展,单晶硅、超硬材料碳化硅晶体等在此领域得到广泛应用。
短句来源
     Slicing is an important process in the manufacture of chip. In order to solve some technical problems in the slicing of big dimension crystal and harder and more difficult-to-machine materials, for example, SiC crystal, a new cutting technology of using endless electroplated diamond wire saw (EEDWS) was reported in this paper.
     切片是芯片制造的一道重要工序,为解决大直径晶体及超硬材料,如碳化硅晶体等的切片问题,本文提出了环形电镀金刚石线锯切片这一新的加工技术。
短句来源
  “碳化硅晶体”译为未确定词的双语例句
     Some Fundamental Topics on β-SiC Crystal Growth
     β碳化硅晶体生长技术的若干基本问题
短句来源
     ON THE GROWTH OF BETA-SILICON CARBIDE BY THE METHOD OF GASEOUS CRACKING
     关于气体裂化法生长β—碳化硅晶体
短句来源
     A New Kind Gem Moissanite Diamond: Silicon Carbide
     新宝石“莫桑钻”——碳化硅晶体
短句来源
     In this thesis, some fundamental topics on p-SiC crystal growth such as the design of the crucible assembling system, the thermal field distribution and the liquid phase epitaxial growth of p-SiC films deposited on Si have been discussed. In brief, following major creative results have been obtained:
     本文探索β碳化硅晶体生长技术的若干基本问题,特别对热系统的设计和热场分布问题,以及用β-SiC薄膜在碳饱和硅熔体中进行液相外延生长的基本工艺问题等进行了研究,获得以下主要创新结果:
短句来源
     Silicon carbide powder as source powder doesn' t sublime less than 1800 'C and the melting of silicon is only 1420'C, thus, the crucible subassembly is designed in a new way and fabricated on the basis of old silicon carbide crystal equipments.
     由于作为生长源的碳化硅粉升华分解温度至少要达到1800℃以上,而硅衬底的熔点只有1420℃,因此在原有碳化硅晶体生长设备的基础上,重新设计制作了坩埚组件。
短句来源
更多       
  相似匹配句对
     Development of SiC Crystal Growth Equipment
     碳化硅晶体生长设备的研制
短句来源
     A New Kind Gem Moissanite Diamond: Silicon Carbide
     新宝石“莫桑钻”——碳化硅晶体
短句来源
     Photonic Crystals
     光子晶体
短句来源
     SPIRAL CRYSTALS
     螺旋晶体
短句来源
     THE POLYTYPISM OF SILICON CARBIDE
     碳化硅的多型性
短句来源
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  sic crystal
Phonon-polariton waves on the surface of SiC crystal
      
In the 3C-SiC crystal, the deep-boron symmetry is also close to axial along one of the four ?111? directions.
      
In the cubic 3C-SiC crystal, there are four equivalent deep boron centers, which represent BSi-vC pairs with the bond directed along one of the four ?111? crystal directions.
      
Two deep-level centers with activation energies Ec-0.18 eV and Ec-0.65 eV (Z1 center) were observed and tentatively identified with structural defects of the SiC crystal lattice.
      
The damaged 4H-SiC crystal lattice party recovers after annealing at 500°C.
      
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Electrical properties,crystallized polytypes and bard structures of silicon carbide(SiC)with large bandgap are reviewed.Growth techniques of SiC crystals and preparation technology of the thin films are given.A brief introduction to main applications of SiC is also presented.

本文概述了宽禁带半导体碳化硅的电学特性、结晶多型体和能带结构,较全面地总结了碳化硅晶体的生长方法和薄膜制备工艺,并对其主要应用也作了扼要的介绍。

The effects of the depositing temperatures on the microstructure of CVI SiC matrix and the properties of C/SiC composites are investigated. The results show that the depositing SiC grains are amorphous at depositing temperature of 950℃, and are crystal above 1 000℃. The SiC crystals deposited at 1 050℃ and 1 250 ℃ are respectively orientated to (111) plane and (220) plane. The depositing uniformity and depth decrease with the depositing temperature increases. The optimum depositing temperature is between...

The effects of the depositing temperatures on the microstructure of CVI SiC matrix and the properties of C/SiC composites are investigated. The results show that the depositing SiC grains are amorphous at depositing temperature of 950℃, and are crystal above 1 000℃. The SiC crystals deposited at 1 050℃ and 1 250 ℃ are respectively orientated to (111) plane and (220) plane. The depositing uniformity and depth decrease with the depositing temperature increases. The optimum depositing temperature is between 1 000℃ and 1 050℃ for 3D braid C/SiC composites, and between 1 110℃ and 1 150℃ for carbon felt C/SiC composites.

研究了沉积温度对化学气相渗透SiC基体微观结构及其碳纤维增强复合材料性能的影响。950℃沉积碳化硅为非晶态;1000℃以上沉积出的碳化硅为结晶态,1050℃沉积碳化硅晶体以(111)取向为主;1250℃沉积碳化硅晶体以(220)取向为主。沉积温度升高,沉积深度和均匀性降低。制备毡基C/SiC复合材料的沉积温度为1100~1150℃;制备三维编织C/SiC复合材料的沉积温度约为1000~1050℃。

The (111) textured cubic silicon carbide (3C-SiC) thin films are deposited on (111) Si substrates using the mass-selected ion beam deposition technique at various substrate temperatures.These films are characterized by X-ray photoelectron spectroscopy,Auger electron spectroscopy,and X-ray diffraction.The carbon ions are reacted with the Si substrates and the amorphous Si-C layers are obtained at room temperature and 400℃,respectively,while the (111) textured 3C-SiC films are formed at 800℃.In addition,the mechanism...

The (111) textured cubic silicon carbide (3C-SiC) thin films are deposited on (111) Si substrates using the mass-selected ion beam deposition technique at various substrate temperatures.These films are characterized by X-ray photoelectron spectroscopy,Auger electron spectroscopy,and X-ray diffraction.The carbon ions are reacted with the Si substrates and the amorphous Si-C layers are obtained at room temperature and 400℃,respectively,while the (111) textured 3C-SiC films are formed at 800℃.In addition,the mechanism of SiC formation is also discussed based on the diffusion process.The SiC thin films are much thicker than those predicted by TRIM,due to the channel effect and the enhanced diffusion caused by implanted ions with certain energies at high substrate temperatures.

在硅衬底上利用具有质量选择功能的低能离子束沉积技术沉积碳离子制备出除碳、硅之外无其他杂质元素的纯净的立方SiC薄膜.利用X射线光电子谱、俄歇电子能谱、X射线衍射对样品进行了表征.结果显示常温和400℃制备的样品为非晶结构,在800℃制备的样品由一富碳的表面层和有着良好化学计量比的SiC层组成,碳化硅晶体薄膜是(111)织构的.通过分析可知衬底温度、离子沉积能量和样品保温扩散时间等因素综合在一起对于在硅上沉积SiC薄膜起着重要作用.远远大于TRIM预测厚度的SiC薄膜的获得是高的衬底温度、一定注入能量的碳离子引起的增强扩散以及通道注入效应综合作用的结果.

 
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