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结激光器
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  junction lasers
     Study of Organic Thin-film Field Effect Transistors and High Power Remote Junction Lasers
     有机薄膜场效应晶体管和高功率远结激光器的研究
短句来源
     High power GaAs/GaAlAs single quantum well remote junction lasers
     高功率GaAs/GaAlAs单量子阱远结激光器
短句来源
     808 nm High-power AlGaAs/GaAs Single Quantum Well Remote Junction Lasers
     808nm高功率AlGaAs/GaAs单量子阱远结激光器
短句来源
     High-power AlGaAs/GaAs Single Quantum Well (SQW) Remote Junction Lasers and Its Aging Characteristic
     高功率AlGaAs/GaAs单量子阱远结激光器及其老化特性
短句来源
  “结激光器”译为未确定词的双语例句
     808nm high-power quantum well remote junction semiconductor laser and its electrical noise character
     808nm高功率量子阱远结激光器及其电噪声特性
短句来源
     ELECTRICAL DERIVATIVE CHARACTERISTICS OF HIGH-POWER AlGaAs/GaAs SINGLE QUANTUM WEL (SQW) REMOTE JUNCTION SEMICONDUCTOR LASERS
     高功率GaAs/GaAlAs单量子阱远结激光器的电导数特性
  相似匹配句对
     Station Model of Micro-cavity Semiconductor Lasers
     微腔半导体激光器模型
短句来源
     Blue dye laser
     蓝色染料激光器
短句来源
     High-power SQW Remote Junction Semiconductor Lasers
     大功率量子阱远半导体激光器
短句来源
     The basic rules of laser including:
     所以,从激光器
短句来源
     Chinese Knot
     中国
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  junction lasers
The comparison with experimental data for GaAs junction lasers gives favourable results.
      
This is indirectly supported by showing agreement between the magnetic field dependence of the ratio and that of the linewidth of spontaneous emission from InSb junction lasers as reported in the literature.
      
A method is then shown for directly determining the ratio from measurements of wavelength shift with cavityQ in junction lasers.
      
Method of determining the internal parameters of p-n junction lasers
      
This paper is devoted to a comparison of two electromagnetic models of junction lasers - the dielectric slab and the Epstein layer.
      


Our apparatus for multilayer liquid phase epitaxy is described. Factors relating to the thin layer LPE growth are discussed. The epitaxy experiments are arranged to take advantage of the mathe- matical method of orthogonal process design. The regime of continuous and uniform growth has been found for the purpose of improving the threshold current density of GaAs-Ga1-xAlx As DH lasers up to 1000-2000A/cm2.

介绍我们采用的多次液相外延实验装置,讨论影响薄层液相外延生长的因素。采用 “正交设计”的数学方法安排外延试验,找到多层连续均匀生长的条件.使GaAs- Ga1-xAlxAs双异质结激光器阈值电流密度达到 1000—2000安培/平方厘米。

The technology of ohmic contact is studied by means of orthogonal process design. Experimental results indicate the technology of ohmic contact with An-Cr alloy for P- GaAs and Ag-Sn alloy for n-GaAs gives the speci- fic contact resistance Rc<10-4 cm2. Good results are obtained in GaAs-Ga1-x Alx As DH lasers with this method.

我们用正交表研究GaAs的欧姆接触工艺.实验结果表明, p-GaAs用 Au—Cr 金、n-GaAs用 Ag—Sn合金的欧姆接触工艺.比接触电阻率 Rc<10-4(欧姆)(厘 米)3应用于 GaAs—Ga1-xAlxAs双异质结激光器.得到良好的效果。

The measured dependence of threshold current of DH lasers with temperature is found to obey an exponential law near room temperature. The values of thermal resistance and series resistance are obtained from these measurements. A method of measuring spectro-temperature effect is described. The values of thermal resistance and series resistance of the laser can be estimated from the wave length shift.

测量GaAs—GaAlAs双异质结激光器阈值电流随温度的变化,表明在室温附近符 合指数规律.通过这一测量,可以得到激光器热阻和串联电阻数值。介绍光谱温度效应 测量方法.通过激光器光谱峰位的移动.也可以推算器件的热阻与串联电阻.

 
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