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影响器件
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  impact device
     These parameters ultimately impact device performance and yield.
     这些参数最终会影响器件的性能和成品率。
短句来源
  “影响器件”译为未确定词的双语例句
     Study the conditions' influence in theory,finally analysis the data,draw the most condition that affect the component.
     然后从理论上对试验条件的影响做了研究,最后对数据进行分析,得出了影响器件最大的条件。
短句来源
     Chemical structure of LC determines its physical properties.
     液晶的化学结构决定液晶的物理性能,物理性能影响器件的显示性能。
短句来源
     To investigate the sensor packaging effect,the finite element method is adopted for analyzing the distribution of residual stress in the multi-sensor chip with FR4 substrates.
     针对集成传感器芯片封装粘贴过程中的残余应力影响器件性能的问题,使用有限元方法对环氧粘胶粘贴集成传感器芯片产生的封装残余应力进行了分析.
短句来源
     GaAs is one of the second-generation semiconductor materials and the quality of GaAs substrate has a direct influence on devices performance.
     砷化镓 (GaAs)为第二代半导体材料 ,GaAs衬底质量直接影响器件性能。
短句来源
     Especially, the ELefficiency and degradation property of the device based on an Eu complexEu(DBM)3bath are investigated in detail.
     特别是以Eu(DBM)_3bath配合物为典型材料,研究了影响器件发光效率和老化性能的各种因素。
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  相似匹配句对
     C.
     C的影响;
短句来源
     The Influence of Loss in OFDL Devices
     OFDL器件中损耗的影响
短句来源
     The factors w affect luminescent efficiency of the device were discussed.
     讨论了影响器件发光效率的因素。
短句来源
     The influence of structure of the chiral aminoalcohol on the enantioselectivity was studied.
     值的影响;
短句来源
     Protection Devices
     保护器件
短句来源
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  impact device
An electro-mechanical vibration exciter and a dropped weight impact device were utilized to determine changes in dynamic mechanical properties of the Russet Burbank potato as influenced by temperature.
      
The ground anchorage integrity testing (GRANIT) system operates by applying an impulse of known force by means of an impact device that is attached to the tendon of the anchorage.
      
The GRANIT system operates by applying an impulse of known force by means of an impact device that is attached to the tendon of the anchorage.
      
A pendulum impact device has been used to assess the deformation of the different foams as a function of impact energy.
      
A pendulum impact device has been used to assess the deformation of the different foams as a function of impact energy.
      
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In this paper, the major factor which affects the noise of a device is theoretically analysed from the equivalent circuit in which the trap effects at the interface between the GaAs expitaxial layer and the substrate are considered. The noise figure in the range of device design versus the elements of the equivalent circuit, the geometrical structure of the device, the material parameters and the operation frequency are described. The new planar devices using oxygen implantation are developed. Submicron gate...

In this paper, the major factor which affects the noise of a device is theoretically analysed from the equivalent circuit in which the trap effects at the interface between the GaAs expitaxial layer and the substrate are considered. The noise figure in the range of device design versus the elements of the equivalent circuit, the geometrical structure of the device, the material parameters and the operation frequency are described. The new planar devices using oxygen implantation are developed. Submicron gate lengths have been fabricated, by using conventional compensated contact photolithography. The microwave noise of the resulted device is much lower than that of the general mesa device. The noise figure of 3.5dB at 12GHz with associated gain of 5dB have been obtained. S-parameters of 2 to 12GHz are also presented. Mean time to failure of the device have been extrapolated to give 2×107 hours. The application experiments, such as that of oscillator, the mixer and the microwave low-noise amplifier at 2 to 12GHz, have been done, and the primary successful results have been achieved.

本文从考虑了GaAs外延层与衬底的界面陷阱效应的等效电路出发,对影响器件噪声的主要因素进行了理论分析,给出了器件设计范围内的噪声系数与等效电路参数、器件结构参数、材料参数和工作频率的关系曲线。提出了氧离子注入的新型平面器件结构,用普通接触式补偿光刻法制作了亚微米栅条,所得器件比普通台式器件具有更低的微波噪声。在12GHz下,噪声系数为3.5dB,相应的增益为5dB。给出了2~12GHz全套S参数。器件平均工作寿命达2×10~7小时。进行了2~12GHz范围内微波低噪声放大器、混频器和振荡器等应用试验,取得了初步的良好结果。

A new device structure, colled "the quasi-planar structure with the SiO2 isolation" for fabricating silicon vertical Chanael power junction-field effect transistor is presented. It is owing to this new structure that the frequency characteristic of devices has been improved remarkably, having a power output of 10 W at 800MHz and 8 W at 1000 MHz, respectively, with the associated power gain of more than 7dB;the devices are applicable to P-L band.

由于采用了“二氧化硅隔离准平面结构”制作硅结型垂直沟道功率场效应晶体管,使器件频率特性有了明显提高,分别在800MHz和1000MHz下得到了10W与8W的输出功率,其功率增益大于7分贝.这种器件可应用在P~L频段.本文从器件的等效电路出发,提出了这种高频功率器件在作结构设计时应遵循的基本原则;简略地介绍了“二氧化硅隔离准平面结构”的特点;着重指出了研制中应注意的问题;最后,简述了影响器件直流参数的有关因素.

The Yellow light-emitting diode of gallium arsenide phosophide was prepared with the tellurium doping n-type GaAs0.150.853N/Gap material which was grown on gallium phosphide substrate by vapor phase epitaxy using ammonium doping arsenic vapor pressure method. The optical and electrical performances of the LED were measured. The factors w affect luminescent efficiency of the device were discussed.

采用掺氨砷压法在磷化镓衬底上外延生长掺碲n型的GaAs0.15P0.85:N/GaP材料,制成磷砷化镓黄色发光二极管,测量了其光学和电学性能。讨论了影响器件发光效率的因素。

 
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