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高能氩
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  high energy argon
     Electronic Energy Loss Effects in Polystyrene Irradiated with High Energy Argon Ions
     高能氩离子在聚苯乙烯中的电子能损效应研究
短句来源
     INVESTIGATION OF AMORPHIZATION IN YTTRIUM IRON GARNET INDUCED BY HIGH ENERGY ARGON IONS
     高能氩离子在钇铁柘榴石中引起的非晶化研究(英文)
短句来源
     INVESTIGATION OF AMORPHIZATION IN YTTRIUM IRON GARNET INDUCED BY HIGH ENERGY ARGON IONS
     高能氩离子在钇铁柘榴石中引起的非晶化研究
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  “高能氩”译为未确定词的双语例句
     Study of Defects in Silicon Irradiated With High Energy Ar Ions
     高能氩离子辐照硅产生的缺陷研究
短句来源
     Positron lifetime study of SiO_2 glass irradiated with high energy Ar ions
     高能氩离子辐照SiO_2玻璃的正电子寿命谱学研究
短句来源
     The experimental results of Al-Li-Mg alloy indicated that lithium concentration on the specimen surface reached approximately 100% in the temperature range of 150 to 300C, which can be explained by Gibbsian segregation theory. The depth profile of Li showed that there was some broadening resulting from recoil implantation by high energy Ar ion bombardment.
     Al-Li-Mg合金的实验结果表明:样品温度在150℃到300℃的范围内,表面Li原子的浓度接近100%,这一结果可由Gibbsian偏析理论进行解释,其中Li在样品表面的深度分布有一定程度的展宽,这是由于刻蚀过程中高能氩(Ar)离子反冲植入所致。
短句来源
     High energy Ar +ion beam sputtering aluminum target,the amorphous films deposited on SiO 2 substrates are a mixture of Al and Al 2O 3.Annealing at between 800℃ and 1000℃,the amorphous films will oxidize,cystalize and finally turn into γ-Al 2O 3 and a-Al 2O 3.The sputtering technique has also been investigated.
     高能氩离子束溅射金属铝靶 ,沉积在SiO2 基片上的非晶薄膜是Al和Al2 O3的混合物。 非晶薄膜在空气中 80 0~ 10 0 0℃退火后将完全氧化并晶化而成γ -Al2 O3、∝ -Al2 O3。
短句来源
     Analysis of UV-visible absorption and conductivity in energetic Ar ion bombarded Kapton
     高能氩离子辐照聚酰亚胺时的能量沉积效应对光学吸收及电性能的影响
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  相似匹配句对
     Study of Defects in Silicon Irradiated With High Energy Ar Ions
     高能离子辐照硅产生的缺陷研究
短句来源
     Theoretic calculation on high energy electron distribution in argon pumped by electron beam
     电子束泵浦高能电子分布的理论计算
短句来源
     PROGRESS IN HIGH ENERGY PHYSICS
     高能物理进展
短句来源
     The Anisotropy of High Energy Cosmic Rays
     高能宇宙线的各向异性
短句来源
     ARGON DUOPLASMATRON ION SOURCE
     双等离子体离子源
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  high energy argon
We measured pin-prick pain and pain tolerance thresholds to high energy argon laser stimuli before and 1, 2, and 3 h after codeine or placebo.
      
Spur diffusion model calculations have been made for high energy argon ions using water as a medium.
      


The removal of heavy metallic elements from the active region of a silicon waferhas been studied through the implantation of high energy Ar~+ into the backside of thewafer.The measurement of gettering effect is based on the measurements of the mino-rity carriers life-time.The experimental results show that the optimized doses are about7.5×10~(14)cm~(-2) and7.5×10~(15)cm~(-2).Finally,the relationship between gettering efficiencyand residual defect density is mentioned.

本文研究高能氩离子注入硅单晶片背面,对单晶片正面有源区里的重金属杂质等的吸杂效果.吸杂作用以少数载流子寿命的提高来衡量.结果表明,Ar~+的优化吸杂剂量在 7.5 ×10~(14)cm~(-2)及 7.5 ×10~(15)cm~(-2)左右.文中最后论及吸杂效果和剩余缺陷密度的关系.

Dry seeds of a.indie a rice variety were irradiated by argon ion beam (E=400MeV/u,LET=117keV/μm)with various doses.The injurious effects in M1 generation were observed,and the dose-seedling survival curve as well as dose-fertility curve were established,which showed that D50-s and D50-f were 93.7 Gy and 67.0 Gy respectively.The mutants with variation in quantitative or morphological characters were sought in M2 generation and the results indicated that treatments at dose from 60 Gy to 120 Gy were effective in...

Dry seeds of a.indie a rice variety were irradiated by argon ion beam (E=400MeV/u,LET=117keV/μm)with various doses.The injurious effects in M1 generation were observed,and the dose-seedling survival curve as well as dose-fertility curve were established,which showed that D50-s and D50-f were 93.7 Gy and 67.0 Gy respectively.The mutants with variation in quantitative or morphological characters were sought in M2 generation and the results indicated that treatments at dose from 60 Gy to 120 Gy were effective in inducing mutation,especially for mutation of semidwarf,ear-lyness,and large grain,but the highest mutation frequency was observed at 90 Gy treatment.Also,more than one mutated-characters were frequently found in one single plant.An analysis of nine isozymes were conducted to d'etect linkage between isozyme loci and loci controlling mutated characters,and the alteration of electrophoretic banding patterns was observed in most mutants surveyed,when compared with original variety,at one or two enzymes of PGD-1 and PGI-2,which related to mutation on characters of grain shape and plant height respectively.

用加速高能氩离子束照射水稻干种子,观察M_1的损伤效应,建立了成苗率与育性的剂量响应曲线,并求出成苗率与育性的半抑制剂量分别为93.7Gy及67.0Gy。在M_2选出了具早熟、矮秆、大粒等性状的多个突变体,并发现多种性状同时变异的突变体所占的比例较大,而不同剂量处理的诱发突变效果有较大差异,在所用剂量范围内,以90Gy处理诱发的突变频率最高,突变谱最广。应用同工酶作为遗传标记研究了所观察的性状突变与9种同工酶酶谱的关系。结果表明,在分析的突变体中,有两种同工酶(PGD-1及PGI-2)的电泳形态不同于原种,且分别与千粒重和籽粒长宽比及株高和抽穗期的变异相关。

Surface segregation behavior of low-Z elements, e.g. , lithium and beryllium on trinary alloy Al-Li-Mg and Binary alloy Cu-Be has been observed. The experiments were performed by means of Secondary Ion Mass Spectroscopy (SIMS) and Auger Electron Spectroscopy (AES). The experimental results of Al-Li-Mg alloy indicated that lithium concentration on the specimen surface reached approximately 100% in the temperature range of 150 to 300C , which can be explained by Gibbsian segregation theory. The depth profile of...

Surface segregation behavior of low-Z elements, e.g. , lithium and beryllium on trinary alloy Al-Li-Mg and Binary alloy Cu-Be has been observed. The experiments were performed by means of Secondary Ion Mass Spectroscopy (SIMS) and Auger Electron Spectroscopy (AES). The experimental results of Al-Li-Mg alloy indicated that lithium concentration on the specimen surface reached approximately 100% in the temperature range of 150 to 300C , which can be explained by Gibbsian segregation theory. The depth profile of Li showed that there was some broadening resulting from recoil implantation by high energy Ar ion bombardment. When the specimen temperature exceeded 360C , beryllium, the impurity element in the alloy was found to segregate to the surface. For this reason, another experiment on surface segregation of Cu-Be alloy was carried out by SIMS and AES, the surface analysis utilizing in-situ AES analysis revealed that the surface was enriched by Be and O at elevated temperature, considering the chemical affinity of Be and O, the principal driving force of segregation was attributed to the oxygen partial pressure in the atmosphere. The depth profile of Be in the alloy was also investigated.

实验观察了三元合金Al-Li-Mg和二元合金Cu-Be中低Z元素(如Li和Be)的表面偏析行为。采用了二次离子质谱仪(SIMS)和俄歇电子谱仪(AES)进行表面分析。Al-Li-Mg合金的实验结果表明:样品温度在150℃到300℃的范围内,表面Li原子的浓度接近100%,这一结果可由Gibbsian偏析理论进行解释,其中Li在样品表面的深度分布有一定程度的展宽,这是由于刻蚀过程中高能氩(Ar)离子反冲植入所致。当样品温度超过360℃时,发现合金中的杂质元素Be开始在表面上偏析。为此,作者采用SIMS和AES对Cu-Be合金进行了表面偏析研究。在位的AES分析表明:样品升温过程中,Be和O在合金表面富集,考虑到Be和O的化学亲和作用,偏析的根本动力来源于真空中的残余氧气。同时还对Be在合金表面的深度分布进行了测量。

 
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