助手标题  
全文文献 工具书 数字 学术定义 翻译助手 学术趋势 更多
查询帮助
意见反馈
   gr噪声 的翻译结果: 查询用时:0.188秒
图标索引 在分类学科中查询
所有学科
更多类别查询

图标索引 历史查询
 

gr噪声
相关语句
  “gr噪声”译为未确定词的双语例句
     The burst and g-r (generation-recombination) noise in high-power quantum well semiconductor lasers were studied theoretically and experimentally.
     对高功率量子阱半导体激光器的爆破噪声和可能来自相同缺陷源的产生复合噪声(g r噪声)进行了研究.
短句来源
     By comparing the characteristic parameters of optic and electric derivative curves before and after aging, it is discovered that the device which produces burst and g-r noise after aging is failure device.
     通过对比样品老化前后光电导数的特征参量发现, 老化后产生爆破噪声和g r噪声的器件为失效器件, 表明高功率量子阱半导体激光器在使用和老化过程中有时会伴有爆破噪声和g r噪声.
短句来源
     The reasons of producing burst, g-r noise and multi-g-r noise are discussed on the basis of the theory of the defect energy level E_t and the variation of the height of the potential barrier of p-n junction.
     通过缺陷能级理论和p n结势垒高度变化, 讨论了爆破噪声、g r噪声及多重g r噪声产生的原因.
短句来源
     Experimental dependences on bias current and physical mechanisms of 1/f noise and g-r noise (generation-recombination noise) in Optoelectronic Coupled Devices (OCDs) are studied.
     对光电耦合器件1/f噪声和gr噪声(产生-复合噪声)的偏置特性及其产生机理进行了实验和理论研究.
短句来源
     Experimental results demonstrate that g-r noise of OCDs emerges with 1/f noise in the range of low frequencies and both of them have a similar rule, that is to say, in the beginning, magnitudes of g-r noise and 1/f noise increase and then decrease with the bias current keep increasing.
     结果表明在低频段,光电耦合器件的gr噪声通常表现为叠加1/f噪声,且两者均随输入电流的增加呈现先增大后减小的规律.
短句来源
更多       
  相似匹配句对
     and noise group (N. G.)
     和噪声组(N.G.)
短句来源
     A recommended acceptable noise level can be determined from the teacheras response to the noise under investigation.
     噪声调查;
短句来源
     Polarographic Method for Acid Scarlet GR
     酸性大红GR的极谱分析法
短句来源
查询“gr噪声”译词为用户自定义的双语例句

    我想查看译文中含有:的双语例句
例句
为了更好的帮助您理解掌握查询词或其译词在地道英语中的实际用法,我们为您准备了出自英文原文的大量英语例句,供您参考。
  g r noise
A small portion of the devices measured showed G/R noise superimposed on the and shot noise of the transistor.
      


Experimental dependences on bias current and physical mechanisms of 1/f noise and g-r noise (generation-recombination noise) in Optoelectronic Coupled Devices (OCDs) are studied. Experimental results demonstrate that g-r noise of OCDs emerges with 1/f noise in the range of low frequencies and both of them have a similar rule, that is to say, in the beginning, magnitudes of g-r noise and 1/f noise increase and then decrease with the bias current keep increasing. From measuring noise of the front part and back...

Experimental dependences on bias current and physical mechanisms of 1/f noise and g-r noise (generation-recombination noise) in Optoelectronic Coupled Devices (OCDs) are studied. Experimental results demonstrate that g-r noise of OCDs emerges with 1/f noise in the range of low frequencies and both of them have a similar rule, that is to say, in the beginning, magnitudes of g-r noise and 1/f noise increase and then decrease with the bias current keep increasing. From measuring noise of the front part and back part in OCDs, it is found that g-r noise source in OCDs lies in the photosensitive transistor. Based on mechanisms of carrier fluctuation, it is discussed that 1/f noise in OCDs belongs to surface 1/f noise and g-r noise is due to trapping and detrapping processes between carriers and deep-level in the emitter space-charge region of photosensitive transistor.

对光电耦合器件1/f噪声和gr噪声(产生-复合噪声)的偏置特性及其产生机理进行了实验和理论研究.结果表明在低频段,光电耦合器件的gr噪声通常表现为叠加1/f噪声,且两者均随输入电流的增加呈现先增大后减小的规律.通过测量前级噪声和后级噪声,发现光电耦合器件的gr噪声源为后级光敏三极管.理论分析表明光电耦合器件的1/f噪声主要为表面1/f噪声,gr噪声则源于光敏三极管发射结空间电荷区的深能级对载流子的俘获和发射.

 
图标索引 相关查询

 


 
CNKI小工具
在英文学术搜索中查有关gr噪声的内容
在知识搜索中查有关gr噪声的内容
在数字搜索中查有关gr噪声的内容
在概念知识元中查有关gr噪声的内容
在学术趋势中查有关gr噪声的内容
 
 

CNKI主页设CNKI翻译助手为主页 | 收藏CNKI翻译助手 | 广告服务 | 英文学术搜索
版权图标  2008 CNKI-中国知网
京ICP证040431号 互联网出版许可证 新出网证(京)字008号
北京市公安局海淀分局 备案号:110 1081725
版权图标 2008中国知网(cnki) 中国学术期刊(光盘版)电子杂志社