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层结合
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  layer binding
     As example of JiNan LanGuang equipments, the author expounds the important function of quality control of ink layer binding fastness of polyethylene printing and composed layer printing in packaging printing.
     本文作者以济南兰光设备为例,论述了塑料薄膜玻璃纸、复合膜印刷的墨层结合牢度质量如何,及其在包装印刷中的重要作用。
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  “层结合”译为未确定词的双语例句
     Study on Adhesion Mechanism of SiC_p /Al Composites and Electroless Nickel Coating
     SiC_p/Al复合材料与化学镀镍层结合机理研究
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     The laminated composite thin plate with thickness of 2 mm was taken as testing sample, in which three lamination defects with diameter not less than  1.2 mm were made on the binding layers at 0.6 mm and 1.4 mm from the upper surface of the composite plate respectively.
     试验样件为2 mm厚的复合层状薄板,在板中距上表面0.6和1.4 mm处的两层结合层中分别制作了三个最小直径为1.2 mm的分层缺陷。
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     Study on Bonding Strength and Corrosion Resistance of Micro-Arc Oxidation Ceramic Layer on Magnesium Alloy
     镁合金微弧氧化陶瓷层结合强度与耐蚀性的研究
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     2. Plasma source is designed by using the narrow discharge gap and thinner a-Al2O3 dielectric layer and high-frequency high-voltage power supply.
     2.采用窄间隙薄α—Al_2O_3电介质层,结合高频高压激励电源构建了等离子体源;
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     Bonding strength of explosive flame plating layer
     爆炸喷涂层结合强度
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  相似匹配句对
     Referring to the self-guard mechanism of G.
     结合G.
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     Combining with B. G.
     结合B.G.
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     Bonding strength of explosive flame plating layer
     爆炸喷涂结合强度
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     A Research on the Adhesion between Ni Coating and Cemented Carbide Substrate
     硬质合金镀镍结合性能的研究
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     (3) syllablic tier;
     (3)音节;
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  layer binding
In Section 2 we briefly introduce the competitive layer binding model.
      


The influence of Laser annealing on the structure and electrical properties of poly-si films in LSI has been studied. Ruby Laser (λ= 6943A, τ = 30mμs, E = 1.8-2.0J/Cm2) has heen used in annealing; doping of poly-si with ion implantenent; the structure is observed with TEM; the crystalline orientation is measured with x-ray diffraction; resistivity, mobility, Carrier, concentration and their distribution in film are measured with Vander Pauw's method and anode oxidation.After Laser annealing, the grain size is...

The influence of Laser annealing on the structure and electrical properties of poly-si films in LSI has been studied. Ruby Laser (λ= 6943A, τ = 30mμs, E = 1.8-2.0J/Cm2) has heen used in annealing; doping of poly-si with ion implantenent; the structure is observed with TEM; the crystalline orientation is measured with x-ray diffraction; resistivity, mobility, Carrier, concentration and their distribution in film are measured with Vander Pauw's method and anode oxidation.After Laser annealing, the grain size is about 1μ, <100> crystalline orientation is enhanced, doping activity approaches 100%, Change curve of mobility with doping concentration has coincided with that predicted by our model.

利用调Q红宝石激光器(λ=6943A,τ=30mμs,能量1.8~2J/cm~2),对LPCVD和常压CVD生长的多晶硅薄膜(5000A)离子注入后进行退火。用透射电子显微镜观察晶粒结构;用X衍射仪测定其优选晶向;用Vanderpauw方法测定电阻率、迁移率和戴流子浓度;用阳极氧化逐步去层结合Vanderpauw霍耳测量测定截流子及迁移率分布。发现晶粒经激光退火后,由200~1000A~0增大至1μ量级;优选晶向增强(100)晶向;戴流子电激活几乎可达100%;迁移率符合王阳光等所提出的理论模型;戴流子在多晶硅膜内的分布变的更加平坦。

This paper presents the exploration of seven factors affecting the piping resistance of ordinary cohesive soils used as a core material of the embankment.The test results show that all the factors to be examined will evidently influence the piping resistance. However, both the dry density of core and the grain size of filter layer adjoining the core are most important. The relation between piping resistance and dry density may be expressed by a hyperbolic function. The test results also indicate that the capacity...

This paper presents the exploration of seven factors affecting the piping resistance of ordinary cohesive soils used as a core material of the embankment.The test results show that all the factors to be examined will evidently influence the piping resistance. However, both the dry density of core and the grain size of filter layer adjoining the core are most important. The relation between piping resistance and dry density may be expressed by a hyperbolic function. The test results also indicate that the capacity of piping resistance would be strengthened, if the core and filter layers could be filled simultaneously to the same level for each compacted layer.It is suggested that these laboratory test results for cohesive soils may be applied to engineering practice by taking a factor of safety about 6.5-12.5. Under this condition the soil will occupy higher resistance against piping.

本文通过试验研究探讨了土料性质,土体干容重、饱和度、渗流出口的淹没情况,制样时的含水量、土与反滤层的结合条件以及反滤料的粒径大小等因素对一般粘性土抗渗强度的影响。结果表明,上述诸因素均有明显的影响。其中主要因素是土的干容重和反滤层的粒径大小。抗渗强度与干容重呈双曲线函数关系。防渗体与反滤层平起平上的施工方法是较好的方法,可保证防渗体具有较高的抗渗强度。只要遵守现有的设计和施工原则,粘性土肯定具有较高的抗渗强度。按正常条件进行试验所得扰渗强度,用于工程时采用6.5—12.5的折减系数将具有足够的可靠性。粘性土第一层反滤的设计应考虑一定的土的凝聚性。

Based on the process simulations and experimentS,a 2μm epitaxial N-well CMOS tech-nology is described,and a reasonable and practical process of the technology is designed.Theuse of full ion-implantation and infrared transiem annealing technologies in the process is suc-cessful.Experiments show that 2μm CMOS devices have excellent I-V characteristics that canbe applied to VLSI.The propagation delay time of the 21-stage CMOS ring oscillator is 0.48ns and the speed-power product per stage is 0.49 pJ.The combination...

Based on the process simulations and experimentS,a 2μm epitaxial N-well CMOS tech-nology is described,and a reasonable and practical process of the technology is designed.Theuse of full ion-implantation and infrared transiem annealing technologies in the process is suc-cessful.Experiments show that 2μm CMOS devices have excellent I-V characteristics that canbe applied to VLSI.The propagation delay time of the 21-stage CMOS ring oscillator is 0.48ns and the speed-power product per stage is 0.49 pJ.The combination of the epitaxial layerand N-well pseudo-collector guard rings can prevent latch-up in CMOS I/O circuits,which arethe most susceptible to Iatch-up,It is concluded that the 2μm epitaxial N-well CMOS techno-logy can be applied to VLSI.

本文描述2μm外延N阱CMOS工艺的研究,在工艺模拟和实验的基础上制定了合理的、可行的工艺流程.在工艺中成功地应用了全离子注入和红外瞬态退火技术.实验结果表明,2μm CMOS 器件具有优良的特性,适合超大规模集成电路的要求.5伏工作电压,21级2μmCMOS反相器环振链的级延时是0.48ns,每级的延时功耗乘积是0.49pJ.P~-/P~+外延层结合N阱伪集电极保护环,可在CMOS电路中最易产生Latch-up的I/O电路部分保证不发生Latch-up.本工艺可以应用于超大规模集成电路的制作.

 
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