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改变器件
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  changing device
     From the development of blue LEDs, we can realize that luminescent spectrum and quantum efficiency are improved dramatically by changing device structures, improving material qualities or using new type material.
     从其发展进程中不难看出,改变器件结构、提高材料质量或采用新型材料使GaN基蓝光LED的光谱质量和量子效率有了本质提高.
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  “改变器件”译为未确定词的双语例句
     Based on this,we further introduced a PVK or NPB hole-transporting layer (HTL),to make trilayer devices ITO/HTL/ZnSe/Alq_3/Al to investigate the influence of ZnSe layer on the emission of the trilayer devices by varying the device structure.
     在此基础上进一步引入有机空穴传输层(HTL),通过改变器件的结构,讨论了ZnSe对有机-无机异质结器件ITO/HTL/ZnSe/Alq3/Al电致发光特性的影响.
短句来源
     Considering both the amplitude and the rise time of the output pulse across the load, the characteristics of DBD with different structure parameters and physical parameters (length, area, doping and the stimulating source) were simulated.
     从该器件在负载上的输出脉冲幅度及上升时间两方面综合考虑,通过改变器件结构参数和物理参数(长度、面积、掺杂浓度、激励源等),模拟研究了不同激励源及不同负载情况下DBD特性的变化情况。
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     Operating the EL device in air,the oxidizing of Al electrode can also decrease the operating life.
     另外,在空气气氛下工作,铝电极的氧化等对器件寿命的影响也很大.改变器件的结构,提高器件的发光效率,减小器件的工作电流,可以大大提高器件寿命。
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     Improving the structure of the chip can greatly enhance the brightness of LED.
     实践证明,通过改变器件结构可以大大提高HB-LED的亮度。
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     When the hole transport layer of PVK is used, the efficiency of double layer device is 10 ̄100 times higher than the efficiency of single layer device, and the highest quantum efficiency is 0.15%(photons/electrons). The luminous efficiency is 0.08 lm/w, the brightness is changed as the thickness of the hole transport layer and emitting layer are modulated.
     实验表明,加入PVK空穴传输层后,双层的效率比单层提高了10~100倍,最高的量子效率达到0.15%,流明效率达0.08lm/W,并可以通过调整空穴传输层及发光层的厚度改变器件发光亮度。
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  相似匹配句对
     PEGULATION AND CHANGE
     规则和改变
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     Change of Heart
     心的改变
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     Protection Devices
     保护器件
短句来源
     The DC parametersof the devices such as BVGD,IDSS and Vp have not changed after passivation.
     器件的直流参数BVGD、IDSS和Vp在钝化后几乎没有改变
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     Thus, the radiation response of MOS device can be significantly changed.
     这样,已能有效地改变MOS器件的抗辐照性能。
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  changing device
The monochromator contains a caroussel with four different focussing crystals above the scattering plane along with a vertical acting changing device.
      


A special coding for input patterns and different read/write modes for BSO-PROM(Pockel's read-out optical effect modulator) are discussed.Only a single BSO-PROM device is needed to realize all the Boolean logic between two binary patterns.The sequential changes of the bias voltage (polarity and amplitude) are avoided,so that the logic operation speed with PROM is greatly raised.The applications of BSO-PROM for OSS (optical symbolic substitution),MOPC(matrix outer product calculation) and NI (network interconnection)...

A special coding for input patterns and different read/write modes for BSO-PROM(Pockel's read-out optical effect modulator) are discussed.Only a single BSO-PROM device is needed to realize all the Boolean logic between two binary patterns.The sequential changes of the bias voltage (polarity and amplitude) are avoided,so that the logic operation speed with PROM is greatly raised.The applications of BSO-PROM for OSS (optical symbolic substitution),MOPC(matrix outer product calculation) and NI (network interconnection) are also implemented.

本文讨论了对输入图形进行特定的编码和对器件采用不同的读写模式。仅用单个 BSO—PROM(Bi_(12)SiO_(20)单晶普克尔效应光读出器件)便实现了两个二值图形间的所有 Boolcan 逻辑,而且不需要时序地改变器件的外加电压(极性和大小),从而大大提高了 PROM 用于光逻辑运算的速度。还将这种 PROM 成功地用于光学符号代换、矩阵外积及互连网络之中。

Analysis on experimental results of InGaAsP/InP buried hetero- structure lasers with double-section in a common cavity is made based on the publication of《A Theory on Stability of Double-Section Semiconductor Lasers》, along with the calculation of their internal parameters.It is shown that the de- pendence of internal light-coupling on temperature is a main factor for changing the working state of the devices;the higher threshold current depends on inter- face defects and electrical leakage of the structure,which...

Analysis on experimental results of InGaAsP/InP buried hetero- structure lasers with double-section in a common cavity is made based on the publication of《A Theory on Stability of Double-Section Semiconductor Lasers》, along with the calculation of their internal parameters.It is shown that the de- pendence of internal light-coupling on temperature is a main factor for changing the working state of the devices;the higher threshold current depends on inter- face defects and electrical leakage of the structure,which are interrelated to fabrication technology of the devices;the leakage can increase the optical output power.

根据《双区半导体激光器的稳定性理论》,分析了 InGaAsp/Inp 掩埋异质结构双区共腔激光器的实验结果,计算了这种器件的内部参数。结果表明:内部光耦合随着温度变化是改变器件工作状态的主要因素;阈值电流偏高与器件工艺相关的界面缺陷、结构漏电关系极大;结构漏电可以提高光输出功率。

In this paper a new anisotropic acousto-electro-optic spectrum analysor is introduced. It can increase the bandwidth and improve the frequency response characteristics of the device.A lithium niobate anisotropic acousto-electro-optic spectrum analysor with central frequency 60 MHz was made.Its central frequency can be changed from 50 MHz to 70 MHz and its bandwidth can be increase from 26 MHz to 37 MHz.

介绍了一种新型的反常声电光频谱分析器,它可以采用外加电压的办法改变器件的中心频率,扩大器件的频带宽度,并改善器件在频带宽度范围内的频率响应特性。用LiNbO3制作了一个60MHz的反常声电光频谱分析器件,测试结果表明,器件中心频率可以由50MHz变到70MHz,频带宽度由原来的26MHz扩大到37MHz。

 
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