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先驱膜
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  precursor films
     The precursor films of Mg and B layers with the atom ratio of 1:2 were deposited on Si(111) substrate, then in-situ annealed at 630℃×30min and 150Pa, 99.99% Ar pressure in the coating vacuum room.
     首先在衬底上按照 1∶ 2的原子比交替蒸发 Mg和 B,所形成的夹层先驱膜在 15 0 Pa99.99% Ar气氛下进行原位热处理 6 30℃× 30 m in。
短句来源
     YBCO precursor films have been fabricated by electrophoresis using YBa_2Cu_3O_(7-δ) and 1 g/mmolYBa_2Cu_3O_(7-δ)+0.4 g/mmolY_2BaCuO_5 powders. YBCO high temperature superconducting thick films were prepared by corresponding sinter processes.
     采用电泳技术(EPD),将两种粉末YBa2Cu3O7-δ和1g/mmolYBa2Cu3O7-δ+0.4g/mmolY2BaCuO5制备成YBCO先驱膜.
短句来源
     The precursor films of Mg and B layers with the atom ratio of 1:2 were deposited on Al_2O_3(0001)substrate,then in-situ annealed at 630℃× 30min and 150Pa,99.99%Ar pressure in the coating vacuum room.
     首先在衬底上按照1:2的原子比交替蒸发Mg和B,所形成的夹层先驱膜在150Pa纯度为99.99%的Ar气氛中,在630℃的温度下原位热处理30分钟。
短句来源
  “先驱膜”译为未确定词的双语例句
     The FeS_2 films associated with In_2S_3 are formed by sulfurizing the precursory Fe_3O_4 films electrodeposited on the substrate of ITO films in the electrolyte with low pH values.
     当电沉积溶液的pH较低时,以ITO膜为基底的Fe_3O_4先驱膜热硫化可以形成有In_2S_3伴生的FeS_2薄膜。
短句来源
     The precursive Fe_3O_4 films are completely transformed into the polycrystalline FeS_2 films by sulfurization annealing at the sulfur vapor pressures higher than 20kPa. The morphology of the FeS_2 films can change from porous and loose structure intosmooth and compact structure with increasing the sulfur vapor pressure.
     当硫化压力高于20kPa时,Fe_3O_4先驱膜可充分转变成具有细小晶粒形态的FeS_2,薄膜形态也由多孔疏松演变为均匀平整。
短句来源
     The FeS_2 crystallites transform from the precursive Fe_3O_4.The In_2S_3 crystallites transform from In_2O_3 in the ITO substrate and propagate easily in the pores of the precursive films because the polyporous configuration of the films can offer the feasible geometrical condition for the growth of the In_2S_3 crystallites.
     FeS2和In2S3分别由先驱膜中的Fe3O4和衬底膜中的In2O3硫化演变而来,先驱膜的多孔形态可提供In2S3与FeS2共生的几何条件。
短句来源
     By applying precursory film, I had firstly found the reason from micro-thought theory-interpretation that brazing alloy spread.
     首次应用先驱膜这一概念对钎料铺展作了微观理论解释。
短句来源
     The polycrystalline FeS_2 films were obtained by annealing the Fe_3O_4 in sulfurizing atmosphere. The effects of the sulfidation parameters, such as temperature, time and sulfur vapor pressure, on the microstructure and photoelectrical characteristics of FeS_2 thin films were investigated.
     本文采用恒流电沉积及氧化处理制备Fe_3O_4先驱体,再经热硫化退火使先驱膜转变为多晶FeS_2薄膜的方法,研究了硫化时间、压力、温度等硫化参数对薄膜组织结构和光电性能的影响。 主要研究结果如下:
短句来源
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短句来源
     By applying precursory film, I had firstly found the reason from micro-thought theory-interpretation that brazing alloy spread.
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短句来源
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  precursor films
This mechanism provides an efficient route to prepare HPAE/SA cross-linked films, in which, the precursor films were prepared by casting HPAE/SA solution at a lower temperature, and then curing the films at a higher temperature.
      
It was shown that the curing of the precursor films after their preliminary biaxial drawing is accompanied by self-orientation, although its degree is well below that after uniaxial drawing under the same conditions.
      
The thallination of the precursor films was performed in a one zone configuration, where both the pellet and precursor film were kept at the same temperature.
      
Spray pyrolysis of Ba, Ca and Cu nitrate solutions was used for deposition of the precursor films.
      
Co-Al-N films with different compositions were deposited by a two-facing target magnetron sputtering method for use as precursor films in the fabrication of magnetoresistive Co-AlN granular films by post-deposition annealing.
      
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We report a new preparation method and measurement results of surperconducting MgB 2 films. Superconduting MgB 2 films were prepared on Al 2O 3 polycrystalline substrates in a two step ex situ process. Contrary to previous reports, precusor boron thin films were deposited by chemical vapor deposition from diborane (B 2H 6) at 470℃ followed by post annealing in Mg vapor at 730℃, 780℃ and 830℃, respectively. The scanning elecetron microscope (SEM) observations reveal that the fabricated films are polycrystalline...

We report a new preparation method and measurement results of surperconducting MgB 2 films. Superconduting MgB 2 films were prepared on Al 2O 3 polycrystalline substrates in a two step ex situ process. Contrary to previous reports, precusor boron thin films were deposited by chemical vapor deposition from diborane (B 2H 6) at 470℃ followed by post annealing in Mg vapor at 730℃, 780℃ and 830℃, respectively. The scanning elecetron microscope (SEM) observations reveal that the fabricated films are polycrystalline films with crystal dimensions below about 2μm and with uneven surfaces. The X diffraction patterns showed random orientated growth of MgB 2 phase and the existence of MgO and MgAl 2O 4 phases in the films. Resistance measurements show the film annealed at 830℃ reaches onset critical temperature T con of 35K and zero resistance temperature T c0 about 24K. This result confirms the possibility to sysnthesise high quality superconducting MgB 2 films by deposition of precursor boron films from B 2H 6 under optimal depositing and annealing conditions. The advantage of the method is in the preparation of large area films, and is more compatible with semiconductor technology.

报道了制备MgB2 超导薄膜的一种新方法和测量结果 .MgB2 超导薄膜的制备采用的是两步异位退火方法 ,但与现有报道的方法不同的是 ,制备硼 (B)先驱膜采用的是化学气相沉积方法 ,在 4 6 0℃温度下热分解乙硼烷 (B2 H6 )沉积的 ,然后镁 (Mg)蒸气中分别在 730℃、780℃和 830℃条件下退火 ,生成MgB2 超导薄膜 .扫描电子显微镜观察表明制备薄膜是多晶的 ,MgB2 晶粒小于 2 μm .X衍射分析发现所生长的薄膜是随机取向的 .80 0℃条件下退火生成的MgB2 超导薄膜起始转变温度和零电阻温度分别达到 35K和 2 4K .结果表明 ,采用B2 H6 热分解化学气相沉积B先驱膜的方法在优化的沉积条件和退火条件下可以制备高质量的MgB2超导薄膜 .我们这种化学气相沉积MgB2 超导薄膜方法在大面积的MgB2 超导薄膜制备方面较脉冲激光沉积方法具有优势 ,并且与现有的半导体工艺技术相兼容 ,有利用实现MgB2 超导薄膜在电子器件方面的应用 .

MgB 2 superconducting thin films on Si(111) substrate were grown by electron beam evaporation. The precursor films of Mg and B layers with the atom ratio of 1:2 were deposited on Si(111) substrate, then in-situ annealed at 630℃×30min and 150Pa, 99.99% Ar pressure in the coating vacuum room. The resistance measurement shows that the sample has weak metal property other than semiconducting property on the normal state, and the zero resistance transition temperature is 16.5K with a onset transition temperature...

MgB 2 superconducting thin films on Si(111) substrate were grown by electron beam evaporation. The precursor films of Mg and B layers with the atom ratio of 1:2 were deposited on Si(111) substrate, then in-situ annealed at 630℃×30min and 150Pa, 99.99% Ar pressure in the coating vacuum room. The resistance measurement shows that the sample has weak metal property other than semiconducting property on the normal state, and the zero resistance transition temperature is 16.5K with a onset transition temperature of 24.7K.

利用电子束蒸发法在 Si(111)衬底上制备了 Mg B2 超导薄膜。首先在衬底上按照 1∶ 2的原子比交替蒸发 Mg和 B,所形成的夹层先驱膜在 15 0 Pa99.99% Ar气氛下进行原位热处理 6 30℃× 30 m in。实验发现超导薄膜在正常态下无半导体电阻特性 ,超导起始转变温度为 2 4 .7K,零电阻温度为 16 .5 K。

YBCO precursor films have been fabricated by electrophoresis using YBa_2Cu_3O_(7-δ) and 1 g/mmolYBa_2Cu_3O_(7-δ)+0.4 g/mmolY_2BaCuO_5 powders. YBCO high temperature superconducting thick films were prepared by corresponding sinter processes. The surface morphology, crystal structure and super_normal transition temperature for sample A, B have been investigated. The different zero resistance transition temperatures were observed when annealing times were changed. The optimum conditions of critical temperature...

YBCO precursor films have been fabricated by electrophoresis using YBa_2Cu_3O_(7-δ) and 1 g/mmolYBa_2Cu_3O_(7-δ)+0.4 g/mmolY_2BaCuO_5 powders. YBCO high temperature superconducting thick films were prepared by corresponding sinter processes. The surface morphology, crystal structure and super_normal transition temperature for sample A, B have been investigated. The different zero resistance transition temperatures were observed when annealing times were changed. The optimum conditions of critical temperature were obtained.

采用电泳技术(EPD),将两种粉末YBa2Cu3O7-δ和1g/mmolYBa2Cu3O7-δ+0.4g/mmolY2BaCuO5制备成YBCO先驱膜.采用相应的烧结工艺得到高温超导厚膜A和B.研究高温超导厚膜A、B的表面形貌、晶体结构、超导转变温度.分别对高温超导厚膜A和B进行不同时间的氧处理,其零电阻转变温度有明显变化,并得到最优化的氧处理条件.

 
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