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器件参数的
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  device parameters
     On the basis of the experimental data of material and device parameters,our results support that Shockly-Read space charge (SRSC) recombination in CdS/CuInSe,is a dominant mechanism controlling the forwarddiode current.
     基于材料、器件参数的实验数据,我们的计算结果支持TCuInSe。 中的Shockley-Read空间电荷(SRSC)复合是控制CdS/CuInSe。
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     3 kinds of high-performance BiCMOS tristate logic gates have been designed and some new methods of modifying the gate structure and using optimal device parameters have been also proposed by adopting 0.35 μm process technology.
     采用0.35μm B iCM O S工艺技术,设计了三种高性能的B iCM O S三态逻辑门电路,并提出了改进三态门电路结构和优化器件参数的方法和措施。
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     NBTI effect on device parameters and its generation mechanism are investigated.
     研究了NBTI效应对PMOSFET器件参数的影响及其产生机理;
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     Further analysis to the device parameters can qualitatively give direction for the op-timal device design to suppress Kink effect.
     对器件参数的分析可以定性地指导抑制Kink效应的器件优化设计。
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     The principle,configuration and technology of the device are des- cribed as weIl as an important approach to the impmovement of the device parameters.
     本文阐述了器件原理、结构和工艺以及提高器件参数的重要途径。
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  device parameter
     The Device Parameter Extraction in the IC Design for Manufacturability
     集成电路可制造性设计中器件参数的提取
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     The TSUPREM-Ⅳ and MEDICI simulation,parameter extraction and characteristics verification show that the design met well with the requests of the device parameter.
     经TSUPREM -Ⅳ和MEDICI一体化仿真、参数提取及特性的验证表明,设计方案完全可以达到器件参数的要求。
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     With particular emphasis on this two module optimized, the output frequency of oscillator is not depended on device parameter. This helps to minimize the effect of temperature drift in frequency. Independence output frequency make the vco steady.
     通过重点对这两个模块的优化设计,我们使得输出的振荡频率不再直接依赖于某一个器件的参数,而是让器件单个参数的影响作用能相互抵消,最后的频率只体现了器件的比值关系,这就从根本防止了因为器件参数的温度系数引起输出频率的漂移,从而使得压控振荡器具有相当好的温度稳定性。
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     Hydro-dynamics model and drift-diffusion model are used respectively to extract substrate current of different channel length NMOSFETs,and through different channel lengths and different peak doping of LDD these infulences in NMOSFET characteristic are studied. The device parameter extraction and optimization in the IC design for manufacturability are introduced.
     分别采用流体力学模型和漂移扩散模型对不同沟道长度的NMOSFET进行衬底电流的提取,并以NMOSFET沟道长度和LDD注入峰值综合对器件特性的影响为研究内容,介绍了集成电路可制造性设计中器件参数的优化与提取。
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     The measurement of device parameter becomes very important.
     人们十分关心器件参数的测量。
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  “器件参数的”译为未确定词的双语例句
     THE PARAMETER ANALYSIS OF i-GaAlAs/GaAs HIGFETs BY USING FINITE-ELEMENT METHOD
     i-GaAlAs/GaAs HIGFETs器件参数的有限元分析
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     OPTIMAL DESIGN OF PARAMETERS OF InSb INFRARED BISTABLE DEVICES
     InSb红外双稳器件参数的优化设计
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     A Data Acquisition System with IBM-PC Testing SSPA-Device's Parameters
     用IBM-PC计算机测试SSPA器件参数的数据采集系统
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     Lastly, the temperature characteristics of SiGe HBT are also studied. Thevariations of the device performance parameters between 23oC~260oC are given.
     最后,本文也对 SiGe HBT 的温度特性进行了研究,并给出了器件在 23oC~260oC 的温度范围内器件参数的变化情况。
短句来源
     Velocity Overshoot Effects on Parameters of Short Channel GaAs MESFET
     速度过冲对短沟道GaAs MESFET器件参数的影响
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  device parameters
This method allows the fast and exact calculation of device parameters for the nanotube electromechanical systems and nanotube electronic devices.
      
Formulas are obtained for the subthreshold currents and blocking factor g as functions of the electrode potentials and device parameters: source and gate widths and thickness and doping of the base.
      
It is found that treatment with atomic hydrogen leads to the formation of a thin (less than 0.05 μm), poorly conducting surface layer, which probably greatly affects the static device parameters of Schottky-barrier diodes.
      
HSPICE analysis using device parameters of Central Semiconductor Manufacturing Corporation (CSMC's) 0.6 μm CMOS technology is also given, and the result shows that the average data throughput of the multiplier is 375 MHz.
      
In this paper, a stochastic analysis of a simple isolated bridge model for different bridge and device parameters is conducted to assess the efficiency of this seismic protection strategy.
      
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  device parameter
Their sensitivities against some responsible device parameter variations are investigated.
      
This architecture is much less sensitive to the pixel level device parameter mismatches in previous velocity sensors while does not have the readout bottleneck problem in previous event-driven readout structures.
      
The specific contact resistance is one of the important device parameter on studying the interfacial properties of the metalization system.
      
The failure of a particular IC is a function not only of the basic material and device parameter changes but also of the circuit environment in which the device is located.
      
In this work, high-performance AlGaAs/GaAs heterojunction bipolar transistors grown by MOCVD with excellent control in the device parameter tolerances have been demonstrated in very high volumes.
      
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In this paper, simplified waveforms of voltage and current of a TRAPATT device have been presented and analyzed. The relationship between device parameters and second harmonic impedances has been set up. The requirements for an approximate design of a TRAPATT oscillator have been worked out. TRAPATT oscillators for second harmonic extraction at 10 cm band have been successfully constructed by using N+ PP+ type silicon TRAPATT diodes with shallow diffusion junction. They can deliver output power of 160-210 w...

In this paper, simplified waveforms of voltage and current of a TRAPATT device have been presented and analyzed. The relationship between device parameters and second harmonic impedances has been set up. The requirements for an approximate design of a TRAPATT oscillator have been worked out. TRAPATT oscillators for second harmonic extraction at 10 cm band have been successfully constructed by using N+ PP+ type silicon TRAPATT diodes with shallow diffusion junction. They can deliver output power of 160-210 w with 10-15% efficiency and less than 10-4 of frequency stability over a range of freqency from 2700MHz to 3300 MHz (with pulse width: 0.5μs and duty cycle: 1/1000). The oscillators possess, moreover, the advantages of wide tunable frequency range, good output, random noise wave suppression ability, etc. and also have fairly good mechanical reliability. Thus a solid state 10 cm transmitting source of unitary pulse system may be used in such equipments as 10 cm transponder, radio beacon transmitter, airborne altimeter, friend-or-foe identification transmitter, etc.

本文提出了一个俘越器件的简化电压、电流波形,并且进行了分析;建立了器件参数与二次谐波阻抗的联系;求得了二次谐波抽出俘越振荡器近似设计的必要条件;采用浅绪N~+PP~+型硅俘越二极管研制成功了十厘米二次谐波抽出俘越振荡器。此振荡器在2700MHz至3300MHz范围内可获得160W至210W的功率输出(脉宽为0.5μs,工作比为1/1000),效率为10%至15%,频率稳定度小于1×10~(-4),并且具有可调范围大,输出端杂波抑制特性好等优点以及较好的机械可靠性,从而提供了一种十厘米单脉冲体制固体发射源,可用于十厘米应答器,敌我识别器等方面。

A general program for two-dimensional analysis of the MESFET has been written and especially a numerical analysis for the GaAs MESFET is performed. As a result, electric potential and free electron densities in the channel have been achieved at a typical bias; some of important device parameters are calculated. Also given in the paper is the explanation for saturation mechanism of source-drain current of short-gate devices. The calculated results are in good agreement with that published in foreign literatures....

A general program for two-dimensional analysis of the MESFET has been written and especially a numerical analysis for the GaAs MESFET is performed. As a result, electric potential and free electron densities in the channel have been achieved at a typical bias; some of important device parameters are calculated. Also given in the paper is the explanation for saturation mechanism of source-drain current of short-gate devices. The calculated results are in good agreement with that published in foreign literatures.

编制了MESFET通用二维分析程序.通过对一个GaAs MESFET进行二维数值分析,得到了典型偏置条件下,沟道内各点的静电电位和自由电了浓度,计算了某些重要的器件参数.解释了短栅器件收漏电流泡和机理.计算结果与国外文献中有关报道相符.

This paper outlines the principles of the step-recovery diode frequency multiplier and presents the design, the results of measurement and the relationship between the multiplier and the parameters of the devices for the Ku-band shunt mode high-order multiplier.

本文扼要叙述了阶跃管倍频器的工作原理,给出用阶跃管的Ku波段并联型高次倍频器的设计方法、测试结果以及倍频器对器件参数的关系.本倍频器(×7)使用WY-42型硅阶跃二极管(40ps

 
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