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电压位移
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  voltage displacement
     The paper introduces the principle and practical application of ZDBS automatic following dynamic compensation arc-suppression unit by analyzing the neutral-point voltage displacement and automatic following principle of arc suppressing coil earthing system.
     本文在分析消弧线圈接地系统的中性点电压位移、消弧线圈接地系统的自动跟踪原理的基础上,重点介绍ZDBS自动跟踪动态补偿消弧装置原理。
短句来源
     The results show that the kind of PZN PZT tiny driver not only has high voltage displacement sensitivity,but also it is frequency response approaches 1kHz,so its one very good kind of tiny driver.
     实验结果表明 ,这类PZN PZT微驱动器不仅具有高的电压 位移灵敏度 ,而且其频响可高达 1kHz,是一种很好的微驱动器件
短句来源
     Therefore, based on the change of the trend of voltage displacement curve, the intersection point between the fitting voltage displacement line of indenter having no load and the fitting voltage displacement polynomial curve of indenter having load may be judged as an initial contact point.
     分别用一直线和一多项式曲线对压头无载荷和有载荷作用时测得的电压位移曲线进行拟合 ,拟合直线和曲线的交点即可作为初始接触点。
短句来源
     The position and length of cantilever stiction change with static driven voltage,so the voltage displacement characteristic depends on load history.
     在静电力作用下 ,悬臂梁粘连的位置和长度会改变 ,使得执行器的电压 位移特性严重依赖加载历史。
短句来源
  “电压位移”译为未确定词的双语例句
     The Research of Voltage Shift in AC Power System with Neutral Earthed via Peterson Coil
     消弧线圈接地系统的中性点电压位移研究
     The prestressed 100N force is selected to add to actuator of servovalve.
     最终选择预紧力为 100N 的伺服阀驱动器,它的电压位移输出最大为
短句来源
     It was found that radiation induced flatband voltage shift of MOS capacitors with positive gate bias is proportional to the third power of the SiO2 thickness.
     实验发现正偏压下的MOS电容受辐照引起的平带电压位移与SiO_2栅介质膜厚度的三次方成正比。
短句来源
     When the grid is highly balanced and the inductance of arc-suppression coil is adjusted continuously, thus making the neutral voltage maximum in 50 Hz, the inductive reactance of arc-suppression coil is equal to the capacitive reactance of the grid-to-ground.
     当电网高度平衡时 ,连续调节消弧线圈电感 ,使中性点工频电压位移达到最大值 ,此时消弧线圈的感抗就等于电网的对地总容抗 ,由此计算出电容电流 ;
短句来源
     Through analyzing the neutral-point voltage of type Y/Y/Y-△transformer,the conclusion that the stabilizing winding causes the transformer’s neutral-point displacement is obtained. Some solutions are presented aiming at the mentioned problems.
     通过对Y/Y/Y-△变压器低压绕组中性点电压的实测和分析,得出该类变压器稳定绕组引起低压绕组中性点电压位移的形成机理,并给出了相应的处理方法。
短句来源
  相似匹配句对
     power voltage supply;
     电网电压
短句来源
     Analysis of higher substation neutral voltage shift
     变电所中性点位移电压偏高分析
短句来源
     A study of displacement
     位移的研究
短句来源
     A Discussion about Residual Voltage
     剩余电压
短句来源
     DISPLACEMENT CURRENT
     位移电流
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  voltage displacement
A reproducible response for dopaminergic agonists was evoked after firing produced by current ramp injections that induced a subthreshold voltage displacement.
      
These changes with membrane potential were approximately exponential; the voltage displacement to achieve an e-fold increase of the rise time was -410 mV, and of the decay time constant -110 mV.
      
Internode extension in young, light-grown mustard plants was measured continuously to a high degree of resolution using linear voltage displacement transducers.
      
A model to simulate the actuation of a grating-element is developed in order to obtain a voltage displacement relationship.
      
Results are voltage displacement functions at several points of interest.
      


A prototype heterodyne interferometer is made using frequency-modnlated diode laser. This paper analyses the principle, dynamic range and resolution of the measurement of this interferometer. The displacement of PZT versus voltage applied to it has been measured.

利用半导体激光器线性调频技术制成了新型的外差干涉仪。分析了干涉仪的测量原理、动态范围及精确度,测量了压电陶瓷的电压-位移曲线。

It was found that radiation induced flatband voltage shift of MOS capacitors with positive gate bias is proportional to the third power of the SiO2 thickness. The experimental results indicate that radiation induced interface states play an important role in flatband voltage shift of MOS capacitors. It was discovered that in view of radiation hardness, 1000℃ is the best temperature for dry oxidation and that annealing at temperature above 1000℃ or hydrogen atoms coming into the Si-SiO2 interface will seriously...

It was found that radiation induced flatband voltage shift of MOS capacitors with positive gate bias is proportional to the third power of the SiO2 thickness. The experimental results indicate that radiation induced interface states play an important role in flatband voltage shift of MOS capacitors. It was discovered that in view of radiation hardness, 1000℃ is the best temperature for dry oxidation and that annealing at temperature above 1000℃ or hydrogen atoms coming into the Si-SiO2 interface will seriously degrade the radiation tolerance of MOS devices. It was supposed that radiation induced interface states mainly result from the existence of unionized excess silicon atoms in the Si-SiO2 transition layer.

实验发现正偏压下的MOS电容受辐照引起的平带电压位移与SiO_2栅介质膜厚度的三次方成正比。实验结果说明辐照感生界面态在MOS电容的平带电压漂移中起重要作用。就抗辐照性能而言,采纳于氧氧化工艺的最佳温度匀1000℃;高于1000℃的氮气退火或氢介入Si-SiO_2界面都会严重降低MOS器件的抗辐照能力。辐照产生界面态的原因是在Si到SiO_2。过渡层中存在未电离的过剩硅。

Abstract Negative bias temperature instability in both n-type and p-type MOSstructures with thermal oxides exposed in oxygen plasma were studied under variousnegative bias stress conditions at temperatures ranging from-170℃ to 100℃,inaging times ranging from lins to 100s and at application fields ranging from -0.3MV/cm to -10MV/cm.The lowest temperatures used in this work were seldom.Theaging times, lins and 10ms,were a few hundredth,and even a few ten thousandthof those times us,ed in conventional negative...

Abstract Negative bias temperature instability in both n-type and p-type MOSstructures with thermal oxides exposed in oxygen plasma were studied under variousnegative bias stress conditions at temperatures ranging from-170℃ to 100℃,inaging times ranging from lins to 100s and at application fields ranging from -0.3MV/cm to -10MV/cm.The lowest temperatures used in this work were seldom.Theaging times, lins and 10ms,were a few hundredth,and even a few ten thousandthof those times us,ed in conventional negative bias temperature instability experiments.The effect of illumination on the surface of MOS structures during stress on themidgap voltage shifts was investigated.It was found that if an n-type MOS structure is not illuminated during stress aging period of lins or 10ms,the C--V curveof the testing MOS structure does not really shift,and if illuminated,about 0.15Vmidgap voltage shift can be observed. However,for p-type MOS structure,a midgapvoltage shift allways occurs alter a similar stress to the one used in the above experiment of n-type MOS structure in spite of whether or not the p-type MOS structureis illuminated during stress.Studies were also made for the dependences of the midgap voltage shift on negative bias voltage,stress aging time and temperature. It isthe key of performing these experiments to separate the hole injection from the holetransportation to oxide bulk once holes inject into oxide hole traps in the wholeprocess of buildup oxide charge during negative bias stress.Out results further confirmed the hole hopping model of the buildup oxide charge and the hole transportation with thermal excitation characteristic.

本文报道了在氧等离子体中暴露过的热生长二氧化硅MOS结构,置于-170至100℃的环境中,经受-0.3至-10MV/cm电场作用1ms至100s的时效处理后,仍然表现出不稳定性的实验结果.1至10ms的时效时间是常规负偏压温度不稳定性试验时间的几百,乃至几十万分之一,用这样短的低温负偏压应力,研究了光照对MOS结构负偏压温度不稳定性的影响,实验与预想一致,N型MOS结构应力处理时,若无光照,时效时间短于10ms,处理后C-V曲线不位移,若有光照,C-V曲线向左位移0.15V左右.对于P型MOS结构,C-V曲线总会发生位移,与光照与否无关,而且其位移大小与N型MOS结构有光照的情形相当.另外还研究了MOS结构带中电压位移对于负偏压温度应力中三个因素(偏置电压、时效时间和温度)的依赖关系.这些实验试图把负偏压温度不稳定现象中的空穴注入与空穴注入二氧化硅向后体内输运的过程分开.实验结果进一步证实了注入的空穴跳跃模型和空穴输运过程具有热激活的特征.

 
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