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管放大器
相关语句
  tube amplifier
    Limit cycle oscillating and chaos of the radiation field in a traveling wave tube amplifier
    行波管放大器中辐射场的极限环振荡和混沌
短句来源
    Threshold analysis for the limit cycle and chaotic oscillation of the radiation field in a traveling wave tube amplifier
    行波管放大器中场极限环和混沌行为的阈值分析
短句来源
    The Design of Ka-band Coupled-cavity Traveling Wave Tube Amplifier
    Ka波段耦合腔行波管放大器设计
短句来源
    Primary design of an 8 mm fundamental wave gyro traveling wave tube amplifier
    8mm基波回旋行波管放大器的设计
短句来源
    SIMULATION AND DESIGN OF A Ka BAND FUNDEMENTAL WAVE GYRO TRAVELLING WAVE TUBE AMPLIFIER
    Ka波段基波回旋行波管放大器的模拟与设计
短句来源
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  “管放大器”译为未确定词的双语例句
    Low Noise TWT Amplifier Ghallanges Solid State'
    低噪声行波管放大器向固态器件挑战
短句来源
    A Power/Gain and Phase Automatic Test System for CW-TWTs
    连续波行波管放大器功率/增益与相位自动扫频测量系统
短句来源
    ANALYSIS ON VELOCITY SPREAD OF A W-BAND GYROTRON TRAVELING WAVE AMPLIFIER
    W波段回旋行波管放大器速度零散的分析
短句来源
    Simulation and design of a W-band gyrotron traveling wave amplifier
    W波段回旋行波管放大器的模拟与设计
短句来源
    The Analysis and Reduction of TWTA's Phase Noise
    行波管放大器相位噪声的分析及其抑制
短句来源
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  tube amplifier
A study is made of the effect of the parameters of a beam and a plasma-filled waveguide in a traveling-wave tube amplifier on the stability of the amplification regime against the excitation of ion acoustic waves by the microwave ponderomotive force.
      
A mathematical model is constructed that describes the development of the beam-plasma instability in a traveling-wave tube amplifier in the presence of a neutral gas.
      
Steady solutions are derived for conditions of microwave discharges in a magnetized plasma-filled traveling-wave tube amplifier, and their stability is investigated.
      
The mathematical model constructed in the first part of our paper is used to numerically investigate the development of the beam-plasma instability in a traveling-wave tube amplifier in the presence of a residual neutral gas.
      
The interaction mechanism is similar to that of a conventional traveling-wave tube amplifier or oscillator.
      
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To analyse the noise- character of an amplifier we begin usually with the noise number property of the inner elements. However,it is not easy to give the correlation between E, and I_n. For this reason, we start, in this article, from the basic concepts of random process and linear circuit theory, and Present a simple method for the analysis of the noise property of the amplifier. Using the method, we have discussed the gerneral model of the amplifier, obtaining an useful formula of E_n~I_n correlation coeficient....

To analyse the noise- character of an amplifier we begin usually with the noise number property of the inner elements. However,it is not easy to give the correlation between E, and I_n. For this reason, we start, in this article, from the basic concepts of random process and linear circuit theory, and Present a simple method for the analysis of the noise property of the amplifier. Using the method, we have discussed the gerneral model of the amplifier, obtaining an useful formula of E_n~I_n correlation coeficient. Finally, influence of the inner etemets of FET circuit on the E_n~I_n correlation coefficient at middle and lower frequencies is discussed。

通常分析放大器噪声特性是直接从其内部元件噪声的数字特性出发,这样不易分析E_n~I_n的相关性。本文从随机过程及线性电路理论的基本概念出发,提出了分析放大器噪声的一种简明方法,用该方法分析了放大器的一般模型,得出了E_n~I_n相关系数的一般公式,并具体地讨论了在中低频段的场效应管放大器电路参数对相关系数的影响。

In this paper a method of calculation of the junction type field effect transistor amplifier is put forward by way of drawing an universal transfer characteristic curve and an universal transconductance characteristic curve. As both curves are common to any types of junction type effect transistor, the calculation of the amplifier becomes simller.

本文提出一种通过绘制通用转移特性曲线和通用跨导特性曲线来计算结型场效应管放大器的 方法,由于此法能适应不同型号的场效应管,使放大电路的计算得到简化。

After how an important role the solid-state amplifiers at microwave frequencies played has been remarked briefly, the features and performances of microwave transistor amplifier, gallium arsenide field-effect transistor amplifier and Schottky barrier-gate field-effect transistor amplifier are compared and estimated. A series of important formulas necessary for analysing and designing the above mentioned amplifiers are derived. A program written by means of the PSU/WATFIV—a sort of Fortran 77 is provided and...

After how an important role the solid-state amplifiers at microwave frequencies played has been remarked briefly, the features and performances of microwave transistor amplifier, gallium arsenide field-effect transistor amplifier and Schottky barrier-gate field-effect transistor amplifier are compared and estimated. A series of important formulas necessary for analysing and designing the above mentioned amplifiers are derived. A program written by means of the PSU/WATFIV—a sort of Fortran 77 is provided and run on IBM 3081. This program can also be run at various kinds of common mini-or microcomputers. The design method developed by HP Company reckoned upon microwave scattering parameter (S-matrices) in the Smith impedance and admittance chart with two colours anda concise design method with different network structure developed by the author will be discussed in an acompany paper.

本文简述了微波固态放大器在雷达电子系统中所起的重要作用后,比较了微波晶体管放大器、萧脱基壁垒门型场效应管放大器及砷化镓场效应管放大器等的特点,评估了它们的性能,推导了分析和设计微波晶体管及场效应管放大器所需的一系列重要公式,并给出了用FORTRAN77之一种——PSU/WATFIV编写的程序.该程序已在IBM3081机上运行通过,亦可在其它各种常见中小型机器上运行。

 
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