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器件特性的
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  device characteristics
     Thin Film Thickness Effect on 0.1μm Dimension SOI Groove Gate Device Characteristics
     硅膜厚度对0.1μm SOI槽栅NMOS器件特性的影响
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     Temperature Distribution in Ridge Structure InGaN Laser Diodes and Its Influence on Device Characteristics
     脊形InGaN激光器的温度分布及其对器件特性的影响(英文)
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     Theoretical Study of Short-Channel MOSFET Device Characteristics
     短沟道MOSFET器件特性的理论研究
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     The impact of mesa etching on the device characteristics of power SITH
     台面刻蚀对电力SITH器件特性的影响
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     Here, we probed into some impacts on the device characteristics, summarized some design considerations of the main parameters, and simulated the designed device.
     本文从IGBT的工作原理出发,探讨了器件结构参数对器件特性的影响,总结出主要参数的设计依据,并据此进行了IGBT器件结构设计和计算机模拟。
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  device performance
     The simulation results indicate that the degradation induced by the same interface state density in grooved gate PMOSFET is larger than that in planar PMOSFET,and in both structure device,the impact of N type donor interface state on device performance is far larger than that of P type.
     研究结果表明同样浓度的界面态在槽栅器件中引起的器件特性的漂移远大于平面器件 ,且 N型施主界面态密度对器件特性的影响远大于 P型界面态 ,N型施主界面态引起器件特性的退化趋势与 P型受主界面态相似 ,而 P型施主界面态则与 N型受主界面态相似 .
短句来源
     Influence of Blue-Band Emission in GaN-Based Green Light Emitting Diode Materials on Device Performance
     GaN基绿光LED材料蓝带发光对器件特性的影响
短句来源
     The simulation results show that the degradation induced by the same interface state density in grooved-gate PMOSFET is larger than that in planar PMOSFET and in both structure devices, the impact of P type acceptor interface state on device performance is far larger than that of N type.
     研究结果表明同样浓度的界面态密度在槽栅器件中引起的器件特性的漂移远大于平面器件,且P型受主型界面态密度对器件特性的影响也远大于N型界面态。
短句来源
     Results from the experiments show that the new process conditions help to improve the device performance.
     优化结果印证了新的工艺条件对器件特性的改善。
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     Introduces integrated circuit TCAD virtual factory system Taurus Workbench ,base on process characteristics of CMOS,optimization of key core parameters for deep submicron n-channel MOS devices,on the Taurus Workbench is discussed. for then results from the experiment show that the new process conditions help to improve the device performance .
     首先介绍了集成电路TCAD虚拟工厂系统TaurusWorkbench,基于CMOS工艺的特点,在TaurusWorkbench环境下进行了深亚微米级N沟器件的核心参数优化,优化结果印证了新的工艺条件对器件特性的改善。
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  “器件特性的”译为未确定词的双语例句
     Based on the hydrodynamic energy transport model,the influence of variation of negative junction depth caused by concave depth on the characteristics of deep-sub-micron PMOSFET has been studied. The results are explained by the interior physical mechanism and compared with that caused by the source/drain depth.
     基于能量输运模型对由凹槽深度改变引起的负结深的变化对深亚微米槽栅 PMOSFET性能的影响进行了分析 ,对所得结果从器件内部物理机制上进行了讨论 ,最后与由漏源结深变化导致的负结深的改变对器件特性的影响进行了对比 .
短句来源
     Influence of Hole Buffer Layer CuPc on Properties of Organic Light-Emitting Devices
     空穴缓冲层CuPc对有机电致发光器件特性的影响
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     Current expansion of GaN-based LED and its affection to the device
     GaN基LED电流扩展对其器件特性的影响
短句来源
     The progress on the performance of AlGaN/GaN HEMT under high temperature is reviewed.
     回顾了在高温条件下AlGaN/GaN HEMT器件特性的研究进展。
短句来源
     After 3×10~4s of high-field stress,the drain current and transconductance of AlGaN/GaN HEMTs grown on sapphire are decreased by 5.2% and 7.6%,respectively.
     采用不同的应力偏压发现器件特性的下降程度随应力偏置电压的增大而增大. 经过3×104s40V高场应力后,蓝宝石衬底AlGaN/GaNHEMT饱和漏电流下降5·2%,跨导下降7·6%.
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  device characteristics
Investigation of the device characteristics of a low-threshold quantum-dot laser emitting at 1.9 μm
      
Effect of ZnTe/ZnTe:Cu complex back-contact on device characteristics of CdTe solar cells
      
Beside the logical interface, also the physical interface to operators is of significance for interactive systems since physical device characteristics determine the suitability of a system for given interactive applications.
      
The degraded device characteristics obtained are attributed to the acceptor diffusion behaviour established.
      
The device characteristics of the dielectrophoretically-aligned SWNTs are discussed.
      
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  device performance
A marked improvement is observed in the device performance; it is attributed to quantum effects.
      
Boiling delay phenomenon in a thermosyphon heat sink and its effect on device performance
      
One of the main processes which have significant influence on the device performance is the compression process of the driver gas.
      
The results show that buriedP-layer can decrease carrier's injections into substrate and improve device performance.
      
The device performance is comparable to devices achieved on several μm thick composition graded buffers and relaxed-SiGe layer virtual substrates.
      
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The three and four layer InGaAsP/InP DH wafer used for fabrication of the LED's were grown by LPE technique. The InGaAsP/ InP DH LED's have been fabricated. The device output was over 1mW, highest value was about 2mW. The output power of the tail fiber (core diameter 60 μm, N.A. =0.23) was over 50 μW. In this report the characteristics of the InGaAsP/lnP DH LED's are described and the characteristics of the output saturation and degradation Were discussed.

用液相外延技术生长的三层和四层InGaAsP/InP双异质结材料,制成了1.3μm InGaAsP/InP双异质结发光管。光功率输出(100mA)>1.0mW,最高2mW,尾纤输出功率(N.A.0.23,芯径60μ)>50μW。文中描述了器件的特性参数,还讨论了光功率的饱和特性和退化特性。

X-ray preionized repetitive pulsed XeCl lasers were investigated experimentally. A pulsed X-ray tube was used as X-ray preionization source to irradiate the laser tube vertically of a discharge volume of 40 cm3. A pulse repetition rate of 10 Hz and an average energy of over 100 mj per pulse were obtained. In addition, measurements and analysis of the device characteristics have been made under the condition of various parameters.

本文介绍X光预电离的重复脉冲,XeCl激光器的实验研究。用脉冲X射线闪管作X光源。垂直照射放电体积约40厘米~3的激光管。获得重复率为10次/秒,每个脉冲平均能量为100毫焦耳以上的激光输出。并对各种参数改变时的器件特性进行了测量和分析。

The paper presents the experiment results of MOS, MNOS capacitors and bipolar transistors by RF annealing. Excess fixed charge and surface states densities in various MIS structures have been successfully reduced by the RF annealing technique. The small current hFE of the bipolar transistor can be increased by ten times. The radiation effects have been effectively removed by this technique. It can restore the characteristrcs of radiated damage devices. This technique employ a concept very different from the...

The paper presents the experiment results of MOS, MNOS capacitors and bipolar transistors by RF annealing. Excess fixed charge and surface states densities in various MIS structures have been successfully reduced by the RF annealing technique. The small current hFE of the bipolar transistor can be increased by ten times. The radiation effects have been effectively removed by this technique. It can restore the characteristrcs of radiated damage devices. This technique employ a concept very different from the conventional thermal annealing, and is superior to the latter in many areas of applicat ion.

本文介绍了MOS、MNOS电容器和双极型晶体管进行射频等离子退火的实验结果。用这种退火技术可以明显地降低各种MIS结构中的固定电荷和界面陷阱。可使双极型晶体管的小电流放大系数(h_(FE))提高一个数量级以上。它也能去掉辐射损伤,使被幅射损伤的器件特性得到恢复。这种退火方法使用了与传统的热退火完全不同的概念,在许多应用方面比热退火优越。

 
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