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差分反射谱技术
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  reflectance difference spectroscopy
     The in plane optical anisotropy of a series of GaAs/AlGaAs,InGaAs/GaAs and InGaAs/InP quantum well (QW) structures has been observed by reflectance difference spectroscopy (RDS) at room temperature.
     在室温下用偏振差分反射谱技术观察到了 Ga As/Al Ga As、In Ga As/Ga As和 In Ga As/In P三种量子阱材料的平面光学各向异性。
短句来源
  相似匹配句对
     Reflectance differential spectroscopy detection system
     偏振差分反射(RDS)测试系统
短句来源
     A THEORETICAL ANALYSIS ON THE NEW DESIGN OF REFLECTANCE DIFFERENCE SPECTROMETER
     反射差分系统新设计的理论分析
短句来源
     A New Type of Electromodulation Spectroscopy and Its Application
     新的电调制反射技术及其应用
短句来源
     Technology of differential frequency hopping
     差分跳频技术
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     Technology of Low Voltage Differential Signaling
     低压差分信号技术
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  reflectance difference spectroscopy
Reflectance difference spectroscopy - a powerful tool to study adsorption and growth
      
Changes in the optical anisotropy of the Cu(110) surface due to adsorption and growth have been studied by reflectance difference spectroscopy (RDS).
      
For InAs/GaAs quantum dot system, the evolution of the wetting layer (WL) with the InAs deposition thickness has been studied by reflectance difference spectroscopy (RDS).
      
X-ray photoelectron spectroscopy (XPS), reflection high energy electron diffraction (RHEED), and reflectance difference spectroscopy (RDS) are used to characterize the surface reactions of TBAs on GaAs (001) Ga-rich surfaces.
      
Optical anisotropy in mismatched InxGa1-xAs/InP and InyAl1-yAs/InP heterostructures has been investigated by variable azimuthal angle ellipsometry and reflectance difference spectroscopy.
      
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The in plane optical anisotropy of a series of GaAs/AlGaAs,InGaAs/GaAs and InGaAs/InP quantum well (QW) structures has been observed by reflectance difference spectroscopy (RDS) at room temperature.It is found that the polarization degree of excitonic transitions of GaAs/AlGaAs QW is inversely proportional to the well width,like the case of InGaAs/InP QW that has studied by other authors.This behavior can be well explained by the interface asymmetry of QWs appearing as a result of the segregation of gallium...

The in plane optical anisotropy of a series of GaAs/AlGaAs,InGaAs/GaAs and InGaAs/InP quantum well (QW) structures has been observed by reflectance difference spectroscopy (RDS) at room temperature.It is found that the polarization degree of excitonic transitions of GaAs/AlGaAs QW is inversely proportional to the well width,like the case of InGaAs/InP QW that has studied by other authors.This behavior can be well explained by the interface asymmetry of QWs appearing as a result of the segregation of gallium atoms during growth.In contrast,the optical anisotropy of InGaAs/GaAs QW tends to increase linearly with the well width,which can not be well explained at present.

在室温下用偏振差分反射谱技术观察到了 Ga As/Al Ga As、In Ga As/Ga As和 In Ga As/In P三种量子阱材料的平面光学各向异性。我们发现 Ga As/Al Ga As量子阱 1 h→ 1 e跃迁的偏振度与阱宽成反比 ,与 In Ga As/In P量子阱的报道结果类似。 Ga原子偏析引起的界面不对称可以很好地解释这种行为。与之相反 ,In Ga As/Ga As量子阱的光学各向异性倾向于与阱宽成正比。目前还不能很好地解释这种现象。

 
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