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   温度比例 的翻译结果: 查询用时:0.395秒
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温度比例
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  “温度比例”译为未确定词的双语例句
     Temperature for mixing health-care material and the rice beverage should be well controlled between 40-50 degrees. PH value and proportion should also be well conducted;
     保健材料与米酒的调配应掌握温度,比例与PH值,温度控制在40~50℃,搅拌转速在20 r/m in以下;
短句来源
     Temperature-scaling Theory for Low-temperature-operated Lightly Doped Base Bipolar Transistor
     低温基区轻掺杂硅双极晶体管的温度比例因子设计规则
短句来源
     The Optimized Design of Bipolar Transistor According to Temperature Scaling-factors
     按温度比例因子的低温双极晶体管优化设计
短句来源
     The Optimized Design of Bipolar Transistor According to Temperature Scaling - factors
     按温度比例因子的低温双极晶体管优化设计
短句来源
     The purpose of this thesis is to establish a design rule with which the bipolar transistors at any specific temperature can be attained.
     提出了一种按温度比例因子设计低温双极晶体管的设计规则。
短句来源
  相似匹配句对
     T is temperature, ℃.
     T为温度,℃。
短句来源
     With the increasing aluminizing temperature,the proportion of “S” aluminizing content becomes larger,it only depends on the process.
     提高渗铝温度,“S”渗铝比例提高。
短句来源
     A Design of Temperature Brainpower Controlling System Base on Proportionally Adjusting
     比例调节的温度智能控制系统的设计
短句来源
     T-temperature, K;
     T—溶液温度,K;
短句来源
     abnormal proportion of artery to vein;
     A:V的比例异常;
短句来源
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  temperature scaling
High temperature scaling of Ni-15Cu-5Al alloy in 1×105 Pa pure oxygen
      
Temperature scaling of the integrated dynamical susceptibility in YBa2Cu3O6.5(Tc=50 K)
      
Temperature scaling, glassiness and stationarity in the Bak-Sneppen model
      
Temperature scaling of ferroelectric hysteresis in hard lead zirconate titanate bulk ceramic
      
The temperature scaling of the ferroelectric hysteresis was investigated in hard lead zirconate titanate (PZT) bulk ceramic.
      
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The analysis of current gain model demonstrates that bipolar transistor suffers serious current gain degradation at low-temperature mainly due to bandgap narrowing in heavily doped emittcr. A novel principle is suggested for the optimum design of lightly doped base bipolar transistor operated at low-temperature. Results of computer simulation are good.

通过对电流增益温度模型的分析,表明发射区重掺杂引起的禁带变窄效应是低温下双极晶体管电流增益衰变的主要原因,提出了用温度比例因子设计低温基区轻掺杂双极晶体管的新设计方法,计算机模拟表明结果良好。

The purpose of this thesis is to establish a design rule with which the bipolar transistors at any specific temperature can be attained. Firstly, the working characteristics of silicon bipolar transistors at low temperature are analyzed and discussed. The physical models of current gain and cutoff frequency fit in with any specific temperature are established. These offer the necessary physical basis to suggest the temperature─scaling law. On the basis of low temperature effects of bipolar transistor, the changing...

The purpose of this thesis is to establish a design rule with which the bipolar transistors at any specific temperature can be attained. Firstly, the working characteristics of silicon bipolar transistors at low temperature are analyzed and discussed. The physical models of current gain and cutoff frequency fit in with any specific temperature are established. These offer the necessary physical basis to suggest the temperature─scaling law. On the basis of low temperature effects of bipolar transistor, the changing condition of the doping concentration in the emitter and base and the width of the emitter and base are emphatically analyzed. The integrated program to get temperature-scaling factors is presented. The optimized results of current gain and cutoff frequency at any specific temperature according to the temperature scaling law are studied.

提出了一种按温度比例因子设计低温双极晶体管的设计规则。在考虑双极晶体管低温效应的前提下 ,着重分析了双极晶体管发射区和基区的浓度及宽度在低温下的变化情况。结合按温度比例子变化后任何特定温度下的双极晶体管电流增益和截止频率的优化结果 ,给出了这些参数在按温度比例因子规则设计时温度比例因子的变化参数。

The purpose of this thesis is to establish a design rule with which the bipolar transistors at any specific temperature can be attained. Firstly, the working characteristics of silicon bipolar transistors at low temperature are analyzed and discussed. The physical models of current gain and cutoff frequency fit in with any specific temperature are established. These offer the necessary physical basis to suggest the temperature-scaling law. On the basis of low temperature effects of bipolar transistor, the changing...

The purpose of this thesis is to establish a design rule with which the bipolar transistors at any specific temperature can be attained. Firstly, the working characteristics of silicon bipolar transistors at low temperature are analyzed and discussed. The physical models of current gain and cutoff frequency fit in with any specific temperature are established. These offer the necessary physical basis to suggest the temperature-scaling law. On the basis of low temperature effects of bipolar transistor, the changing condition of the doping concentration in the emitter and base and the width of the emitter and base are emphatically analyzed. The integrated program to get temperature - scaling factors is presented. The optimized results of current gain and cutoff frequency at any specific temperature according to the temperature scaling law are studied.

提出了一种按温度比例因子设计低温双极晶体管的设计规则。在考虑双极晶体管低温效应的前提下,着重分析了双极晶体管发射区和基区的浓度及宽度在低温下的变化情况。结合按温度比例子变化后任何特定温度下的双极晶体管电流增益和截止频率的优化结果,给出了这些参数在按温度比例因子规则设计时温度比例因子的变化参数。

 
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