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氧空位对
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     The work of T.
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     The optical growth of D.
     D.
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     charge compensation of oxygen vacancy;
     空位的电荷补偿;
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     The Effect of Oxygen Vacancy Concentration on the Properties of Perovskite-type Catalysts
     空位浓度钙钛石型催化剂性能的影响
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     Effect of the oxygen vacancy of Ce:YIG films on optical absorption properties
     Ce:YIG薄膜中空位光吸收性能的影响
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The defect states and their annealing behaviors in electron irradiated Al diffusionp~+-n diodes which are made of high resistivity float-zone and crucible grown siliconhave been investigated.The energy levels of major defects in the float-zone silicon in-troduced by electron irradiation are at E_c-0.43 eV (divacancy) and E_v+0.49 eV.The concentrations of these levels do not change after annealing at 300℃.The majordefect states in crucible grown silicon introduced by electron irradiation are at E_c-0.18 eV (O-V)...

The defect states and their annealing behaviors in electron irradiated Al diffusionp~+-n diodes which are made of high resistivity float-zone and crucible grown siliconhave been investigated.The energy levels of major defects in the float-zone silicon in-troduced by electron irradiation are at E_c-0.43 eV (divacancy) and E_v+0.49 eV.The concentrations of these levels do not change after annealing at 300℃.The majordefect states in crucible grown silicon introduced by electron irradiation are at E_c-0.18 eV (O-V) and E_v+0.49 eV.The concentration of the (O-V) decreases apparentlyafter annealing at temperature above 200℃ and vanishes at 300℃.

研究了高阻区熔和直拉单晶(扩铝)的P~+n管经电子辐照后产生的缺陷能级和它们的退火特性.区熔单晶中辐照生成的主要缺陷能级为 E:-0.43eV (双空位)和 E_v+ 0.49eV.在300℃退火后,这些能级的浓度与未退火前基本相同.直拉单晶中辐照生成的缺陷能级为E_c-0.18eV (氧空位对)和 E_v+ 0.49eV.在200℃以上退火后,氧空位明显减小并在300℃消失.

Starting from the quasi-two dimensional Bose condensation, we studied the influence of layer-thickness and ox gen-vacancy on the critical temperature T_c in real high-T_c, superconductors. The results are consistent with known experiments qualitatively.

本文从准二维玻色凝聚出发,研究了层状高温超导氧化物材料中,层厚度和氧空位对临界温度的影响。所得结论应用到YBa_2Cu_3O_7中,与已知的实验定性符合。

The positron annihilation lifetime measurements have been performed to study the defects and radiation damage in the 1.45×1020n/cm2 and 3.10×1017n/cm2 neutron irradiated silicon as a function of annealing temperature from 343 K to 1073 K. The oxygen- vacancy (O- V) pairs were observed in both high and low dose neutron irradiated silicon samples and the quadrivacancies were detected during the annealing process in the high dose neutron irradiated silicon only. The measured short lifetime τ1 is a weighted average...

The positron annihilation lifetime measurements have been performed to study the defects and radiation damage in the 1.45×1020n/cm2 and 3.10×1017n/cm2 neutron irradiated silicon as a function of annealing temperature from 343 K to 1073 K. The oxygen- vacancy (O- V) pairs were observed in both high and low dose neutron irradiated silicon samples and the quadrivacancies were detected during the annealing process in the high dose neutron irradiated silicon only. The measured short lifetime τ1 is a weighted average of lifetimes of positrons annihilated in bulk and those trapped at the O-V pairs. The long lifetime τ2 is attributed to positrons trapped at the divacancies or quadrivacancies.

采用正电子湮没方法研究了1.45×10~(20)n/cm~2和3.10×10~(17)n/cm~2快中子辐照高纯单晶硅的辐射损伤及其退火效应。在343—1073K温度范围内测量了正电子湮没寿命随退火温度的变化。实验观察到氧-空位对和在高中子剂量辐照的Si中发现的双空位复合成四空位。正电子湮没短寿命成分τ_1是晶格正电子寿命和氧-空位对捕获的正电子寿命的加权平均值,而长寿命成分τ_2是双空位或四空位捕获的正电子湮没寿命。

 
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