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核辐射
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  nuclear radiation
     HJ9000 Nuclear Radiation Environment Monitoring Vehicle
     HJ9000核辐射环境监测车
短句来源
     HHF-217 TYPE NUCLEAR RADIATIoN THICKNE
     HHF-217型核辐射厚度计
短句来源
     In this paper, the preparation technology for highly resistively GaAs surface nuclear radiation detector of thickness 300-800μm and an active area of 30-113mm2have been described and experimental measurement results are given.
     本文介绍了厚度为300μm—800μm,有效面积为30—113mm2的高阻GaAs单晶材料制备的核辐射GaAs 探测器的研制工艺,测试结果。
     In this paper,the preparation technology for highly resistively GaAs surface nuclear radiation detector of thickness 300-800 m and an active area of 30-113mm2have been described and experimental measurement results are given.
     介绍了厚度为300-800μm,有效面积为50-113mm2的高阻GaAs单晶材料制备的核辐射GaAs探测器的研制工艺,测试结果。
短句来源
     Resoponse of High T_c Superconducting Josephson Junction to Nuclear Radiation
     高T_c超导Josephson结对核辐射的响应
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  nuclear irradiation
     DEVELOPMENT OF WHEAT CULTIVARS WITH SALT TOLERANCE THROUGH DOUBLED HAPLOID AND NUCLEAR IRRADIATION TECHNIQUE
     利用加倍单倍体与核辐射技术培育耐盐小麦
     The present paper described the advances in Application of nuclear irradiation in agriculture in the aspects of irradiation-induced mutation breeding, irradiated food, irradiation sterility to prevent harmful insects, and raising crop production by low dose stimulating.
     从辐射诱变育种、辐照食品、辐射不育防治害虫和低剂量辐射刺激提高产量诸方面的成果、成就论述了核辐射农业应用的研究进展;
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  “核辐射”译为未确定词的双语例句
     Canonical Correlation Analysis On Main Characters of The L 2 Genereation Of Wheat Induced By LaserNuclear Radiation
     激光——核辐射诱变小麦二代(L_2)主要性状典型相关分析
短句来源
     Genetic Variation Study of Laser-nuclear Radiation's influence on Wheat Stalk Traits
     激光—核辐射诱变小麦茎杆性状的遗传变异研究
短句来源
     A Study of Metallization System in the Radiation Hardened Power Transistor
     核辐射加固功率晶体管的金属化系统研究
短句来源
     It has been applied to radiation monitoring system of 4 MeV electrostatic accelerator in my school at present.
     目前其已应用到我校4兆伏静电加速器的核辐射监测系统中。
短句来源
     MODEL HDY 5042 CRUDE OIL MOISTURE GAUGE USING LOW ENERGY RADIATION
     HDY 5042型低能核辐射原油水分仪
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  nuclear radiation
The properties of photomultiplier tubes operating in the gating mode as components of scintillation detectors were investigated in high-power pulsed electromagnetic and nuclear radiation fields.
      
The measured dependences of the induced absorption and radioluminescence intensity versus the nuclear radiation wavelength, flux, and fluence, as well as the temperature, are analyzed.
      
Stabilization of nuclear radiation spectra by the hardware and software correction
      
Two types of stabilization of nuclear radiation spectra are described.
      
Wide gap, insulating semiconductor crystals offer great promise in photoelectric devices, especially as detectors of electromagnetic and nuclear radiation, but are not widely used because they become polarized during operation.
      
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  nuclear irradiation
Formation of defect density superlattices in binary compounds under nuclear irradiation
      
In contrast, the survival fractions for nuclear irradiation at the same doses were 35% and less than 1% respectively.
      
This review presents a panoramic view on the use of radioactivity, nuclear irradiation and instrumental nuclear techniques in the elucidation of the structure and composition of fullerenes and their compounds.
      
Effect of nuclear irradiation on the properties of refractory compounds
      
Cells were pretreated with graded doses of X rays 4 h before targeted nuclear irradiation of 10% of randomly selected cells with a single particle.
      
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With the advance of nuclear weapons spacebornes, nuclear propulsion systems and nuclear reactors, the problem of radiation environment becomes more and more important during the last 20 years. Since the electronic devices and systems are quite sensitive to nuclear radiation, they must be well designed and hardened in order to operate and survive in space and near the nuclear reactor or the explosion of a nuclear weapon. So the antinuclear radiation electronics have been formed and developed into a new branch...

With the advance of nuclear weapons spacebornes, nuclear propulsion systems and nuclear reactors, the problem of radiation environment becomes more and more important during the last 20 years. Since the electronic devices and systems are quite sensitive to nuclear radiation, they must be well designed and hardened in order to operate and survive in space and near the nuclear reactor or the explosion of a nuclear weapon. So the antinuclear radiation electronics have been formed and developed into a new branch of electronics. An outline of so called antinuclear radiation electronics would include three major categories: (1) radiation effects (to make radiation tests and to evaluate the survivabilily); (2) damage mechanism (to study the damage mechanism and to determine the failure modes); (3) nuclear hardening (to make the hardening design and fabrication techniques). An overview of the new speciality is presented in this paper.

本文扼要地介绍抗核辐射电子学这门新兴学科的主要内容及涉及的主要技术和理论问题,并概述了目前的发展状况。

The influence of the thickness pf the luminescent material ——p-Terphenyl ireST-551 organic scintillator on the β/γ ratio and the relation between the thickness-and the output pulse amplitude were studied. With the increase of the thickness, the β/γ ratio decreases and the output pulse amplitude increases.For a 90Sr-90Y β source and a 60Co γ source, with the thickness of p-Terphenyl being 7-12 mg/cm2, the β/γ ratio can reach to 800 with pulse amplitude acceptable.

在β放射性沾污监测、环境保护以及铀镭矿样分析等场合,测量对象往往是弱β放射性,或者存在强γ辐射干扰场。这都要求核辐射探测器具有很高的β/γ比,以便把弱β放射性信号从γ本底中区分开来。为此,国外在寻找合适的高β/γ比探测器,并对多种核辐射探测器的β/β比值进行了测定,但皆不太理想。我们在ST-402闪烁屏基础上制成ST-551型对-联三苯闪烁体(简称ST-551),它是将闪烁物质对-联三苯与二氯乙烷制成悬浊液,喷涂于有机玻璃衬板上热压而成。当适当改变发光体厚度时,对于~(90)Sr-~(90)Yβ源和~(60)Coγ源给出的β/γ比可达800。它为前述任务的解决提供了更为有效的探测器。

According to the experimental results, the effects of original silicon parameters on characteristics of semicondoctor detectors have been discussed. These parameters are: crystallized condition under different atmosphere, homogeneity of resistivity, impurity compensation, carrier lifetime, oxygen content, dislocation and other defects. The radi-ation detectors from various N-type and P-type silicon single crystals of high resisti-vity have been made, and the performance of detectors are compared. The basic requi-rements...

According to the experimental results, the effects of original silicon parameters on characteristics of semicondoctor detectors have been discussed. These parameters are: crystallized condition under different atmosphere, homogeneity of resistivity, impurity compensation, carrier lifetime, oxygen content, dislocation and other defects. The radi-ation detectors from various N-type and P-type silicon single crystals of high resisti-vity have been made, and the performance of detectors are compared. The basic requi-rements and progress of detector-grade monocrystalline silicon are also described.

本文根据实验结果讨论了原始硅单晶的不同生长气氛、电阻率均匀度、杂质补偿度,载流子寿命、位错、含氧量等对半导体核辐射探测器性能的影响,对于用不同参数的高阻P型和N型硅单晶制成的探测器进行了比较和分析。文中也谈到了对探测器级硅单晶的基本要求和今后展望。

 
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