With the development of semiconductor technology, especially the development of SOI(Silicon on Insulator) technology, SOI LDMOS has been used in high-speed power integrated circuits and RF integrated circuits.
随着半导体工艺技术的不断成熟,尤其是SOI(Silicon on Insulator)技术的发展,SOI LDMOS已经应用于高速功率集成电路和射频集成电路中。
Designed with TSMC 0.18μm CMOS technology and based on the RF integrated circuits simulation software-ADS(Advanced Design System), the LNA designed is matched, simulated and optimized, later with its performance analysis.
SOI decreases the crosstalk between RF analog and digital logic circuits. So it's easy to integrate with passive elements and high resistant SOI and GPSOI enhance these advantages and attract great interests in CMOS RF integrated circuits fields.
The characteristic of the RF device differs from the low frequency device, so the research on the RF characteristic of devices in CMOS technology is the key for designing the radio frequency integrated circuit.
Radio Frequency integrated circuit (RF IC) is a key device in electronic systems for radar and wireless communications. It is quite hard to evaluate RF IC's performance accurately due to its high operating frequency.
As a core device in wireless transmission systems,radio frequency integrated circuit(RFIC) has received a worldwide attension with regard to its technology and product development,and a great breakthrough has been made in the last decade.