The main contents and results are as follows:(1) With the help of OPFCAD software, anti-reflective and protective films of SiO_2、 SiO_2/Si_3N_4、 SiO_2/Si_3N_4/SiO_2 are designed on sapphire substrates.
The authors set up a set of measurement and compensation system using a deformable mirror and a spectral phase interferometry for direct electric-field reconstruction (SPIDER) instrument in a 1 kHz Ti∶sapphire femtosecond laser.
A novel high power self starting mode locked Ti∶sapphire laser with a semiconductor saturable absorber mirror (SESAM) as self starting element is demonstrated. Its sloping efficiency is 22%, average power as high as 1.7 W and pulse width shorter than 16 fs.
The optical transmittance spectrum of Mg0.16Zn0.84O film deposited on sapphire substrate was measured at room temperature with a TV-1900 UV double-beam spectrophotometer, the average transmittance was about 95%. Furthermore the band gap of 3.58mV for Mg0.16Zn0.84O film was estimated.
Using radio-frequency magnetron sputtering, it is demonstrated that amorphous films based on a tungsten tellurite glass can be deposited on different substrates (such as opal, sapphire, fused silica, Corning glass 1737, and tellurite glass).
Desorption of Physisorbed Molecules from the Sapphire Surface by Yttrium-Aluminum Garnet Laser Second-Harmonic Radiation
A sapphire plate with platinum temperature microsensors deposited on it by sputtering is used as a heater.
Spectral characteristics of single crystals-fluorite, magnesium fluoride, quartz, sapphire, silicon carbide, lithium fluoride, barium fluoride, and fianite-used as materials for optical windows in studies in the VUV spectral region are presented.
This instrument is designed for controlling the technological process of growing semiconductor heterostructures on substrates of various types (GaAs, InP, Si, and sapphire).
Relaxation of bubbles in the leucosapphire melt during crystal growth through lateral directed crystallization
The influence of the porosity of the feed material on the formation of micropores in the structure of leucosapphire crystals during crystal growth through the lateral directed crystallization is discussed.
Magnetic properties of leucosapphire single crystals in the temperature range from 4.2 to 300 K
Results are given from measurements of the specific heat and thermal conductivity of a leucosapphire substrate and the thermal conductivity of a SrTiO3 film of thickness 2 μm.
Effect of the crystal face orientation on the thermostimulated exoelectron emission from leucosapphire and zinc oxide crystals
Preventative applications of the commercial products Saphire 50 WP (fludioxonil) and Rovral 50 WP (iprodione) were effective against lesion development on cotyledons by the wild-type and the mutant strains of B.
Microwave Response of Perfect YBa2Cu3O7-x Thin Films Deposited on CeO2-Buffered Saphire: A Probe for Pairing Symmetry
The SAPHIRE example problem event tree using two top-level system gates.
The same SAPHIRE example problem can be used to demonstrate the methods for unreliable systems.
With the aid of time-based recovery modules in SAPHIRE, the determination of applicable non-recovery probabilities becomes a manageable process.