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  growth mode
The growth mode developed provides growth rates that are five times higher of large high-quality optical KDP crystals.
      
Control over the parameters of InAs-GaAs quantum dot arrays in the Stranski-Krastanow growth mode
      
At high indium concentrations, a transition from the two dimensional to island growth mode was observed, which was caused by an increase in the mismatch strain.
      
With decreasing droplet diameter, the growth mode of the primary phase α changes from faceted to nonfaceted growth and the eutectic changes from needle-like to anomalous eutectic.
      
The growth mode of (ε + θ + Sb) ternary eutectic exhibits a transition of "divorced eutectic-mixture of anomalous and regular structures-regular eutectic" along the sample axis due to the inhomogeneity of sound field distribution.
      
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  growth model
The problem comes from the discussion of a growth model of self-maintaining protocell in multidimensional case.
      
This paper studies a stochastic endogenous growth model with pollution.
      
An urban economic growth model with endogenous infrastructure allocation
      
In this paper, an urban economic growth model with endogenous infrastructure allocation is given by introducing the two-variable utility function for city's inhabitant.
      
Growth Model System for National Continuous Forest Inventory
      
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  growth modes
The internal losses, and also threshold and spectral characteristics, are correlated with the optical gain and radiative recombination efficiency, which are strongly dependent on the design of the active region and growth modes.
      
The data obtained indicate a considerable difference between the epitaxial growth modes dominating in low and conventional (500-700°C) temperature ranges.
      
The use of these special growth modes stimulates the activated phase decomposition, which leads to the formation of quantum dots with substantially larger localization depth of electrons.
      
The difference between the growth modes of these gold layers on MgO and ona-C is explained by the predominance of respectively nucleation and coalescence phenomena
      
The individual energies are of interest because they may play different roles in the realization of specific growth modes.
      
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The growth characteristics and surface reconstruction of Ge/Si(lll) and Si/Ge(lll) are studied by reflection high energy electron diffraction (RHEED) and Auger electron spectros-copy (AES). The growth modes are proposed based on the results. The stain effects on the growth characteristics, interface structure and surface reconstruction are further discussed.

本文利用RHEED和AES对Ge/Si(111)和Si/Ge(111)体系的生长特性与表面再构进行了研究。由此提出了其生长模式,并讨论了应力对生长特性、界面特性和表面再构的作用。

The growth dynamical processes of Si(111) molecular beam epitaxy under different growth temperature are studied by RHEED intensity oscillations. The Si(lll) epilayer grew in a "step flow" mode at the temperature above 520℃(growth rate 0.02 nm/s), and in a "2D nucleation" bilayer mode at temperature range between 520℃ and 420℃. Below 380℃, even at room temperature, the growth is still in a bilayer mode. The RHEED intensity oscillation shows a monoatomic layer mode during the initial stage of growth, which is...

The growth dynamical processes of Si(111) molecular beam epitaxy under different growth temperature are studied by RHEED intensity oscillations. The Si(lll) epilayer grew in a "step flow" mode at the temperature above 520℃(growth rate 0.02 nm/s), and in a "2D nucleation" bilayer mode at temperature range between 520℃ and 420℃. Below 380℃, even at room temperature, the growth is still in a bilayer mode. The RHEED intensity oscillation shows a monoatomic layer mode during the initial stage of growth, which is believed due to the superposition of two kinds of oscillations originated from coherent elastically scattering and incoherent scattetring or surface diffuse scattering.

本文用反射式高能电子衍射(RHEED)强度振荡研究了不同生长温度下Si(111)分子束外延的生长动力学过程,生长温度高于520℃(生长速率约0.15A/S)时,Si(111)外延为“台阶流”生长模式,生长温度低于475℃时,外延为“二维成核”双原子层生长模式,在较低温,甚至室温时,其外延仍为双原子层模式,但是镜向弹性散射束振荡和非弹性散射束振荡的叠加会造成RHEED强度在生长的最初阶段出现“类单原子层”模式的振荡特性。

In this paper,the Si deposited on GaP(111) clean surface was carried out with a Si electron beam evaporation by homemade.Then the formative procedure of Si/GaP(111) was analysed in situ by XPS,in which the shift trendences of each atom-core levels was used to study about the bonding between the atoms.The Si growth mode was determined by the intensity of Ga3p Peak varying with the thickness of Si overlayer.Furthermore,the status of surface structure was monitored by LEED when Si deposited on the GaP(111)surface,The...

In this paper,the Si deposited on GaP(111) clean surface was carried out with a Si electron beam evaporation by homemade.Then the formative procedure of Si/GaP(111) was analysed in situ by XPS,in which the shift trendences of each atom-core levels was used to study about the bonding between the atoms.The Si growth mode was determined by the intensity of Ga3p Peak varying with the thickness of Si overlayer.Furthermore,the status of surface structure was monitored by LEED when Si deposited on the GaP(111)surface,The formative mechanism of Si/GaP(111) interface was understood furtherly by these results.

研究用电子束蒸发方法把Si淀积在GaP表面的界面生长过程。用XPS在线测量Si/GaP(111)界面形成过程中各原子芯能级的移动趋势来研究界面原子间的成键情况;借助Ga3p峰强随Si覆盖厚度的变化确定Si的生长模式。还用LEED监测Si生长时的表面结构状态。

 
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