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  growth mode
The growth mode developed provides growth rates that are five times higher of large high-quality optical KDP crystals.
      
Control over the parameters of InAs-GaAs quantum dot arrays in the Stranski-Krastanow growth mode
      
At high indium concentrations, a transition from the two dimensional to island growth mode was observed, which was caused by an increase in the mismatch strain.
      
With decreasing droplet diameter, the growth mode of the primary phase α changes from faceted to nonfaceted growth and the eutectic changes from needle-like to anomalous eutectic.
      
The growth mode of (ε + θ + Sb) ternary eutectic exhibits a transition of "divorced eutectic-mixture of anomalous and regular structures-regular eutectic" along the sample axis due to the inhomogeneity of sound field distribution.
      
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  growth modes
The internal losses, and also threshold and spectral characteristics, are correlated with the optical gain and radiative recombination efficiency, which are strongly dependent on the design of the active region and growth modes.
      
The data obtained indicate a considerable difference between the epitaxial growth modes dominating in low and conventional (500-700°C) temperature ranges.
      
The use of these special growth modes stimulates the activated phase decomposition, which leads to the formation of quantum dots with substantially larger localization depth of electrons.
      
The difference between the growth modes of these gold layers on MgO and ona-C is explained by the predominance of respectively nucleation and coalescence phenomena
      
The individual energies are of interest because they may play different roles in the realization of specific growth modes.
      
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Based on numerous experiments, various kinds of graphite-morphology obtained by the treated commercial cast iron melt with cerium or lanthanum, gaining some knowledge of the spheroidizing ability and the spheroidizing effect of inoculating silicon on the graphite. Experiments show that the treatment of commercial cast iron melt with spheroidizing element is a necessary condition for the formation of spherulitic graphite, a full condition is the spheroidizing agent and inoculant. The inoculating silicon has an...

Based on numerous experiments, various kinds of graphite-morphology obtained by the treated commercial cast iron melt with cerium or lanthanum, gaining some knowledge of the spheroidizing ability and the spheroidizing effect of inoculating silicon on the graphite. Experiments show that the treatment of commercial cast iron melt with spheroidizing element is a necessary condition for the formation of spherulitic graphite, a full condition is the spheroidizing agent and inoculant. The inoculating silicon has an ability to help the graphite in spheroidization.It is proposed that (0001) plane of graphite-microcrystal with screw growth and its (1012) or (1013) plane with twin-branch growth are the model of spherulitic graphite growth. Malformation of primary spherulitic graphite results from development of twin-branch. During eutectic crystallization, malformation of spherulitic graphite depends on the conditions of crystallization front.

本文在大量实验的基础上,分析用铈、镧处理工业铁水得到的各种石墨形态,初步查明了铈、镧对石墨的球化能力和孕育硅对石墨的球化作用。实验指出:工业铁水中加入球化元素是形成球状石墨的必要条件,而充分条件是加入球化剂和孕育剂,孕育硅有促进石墨球化的能力。 文中提出:石墨微晶(0001)面螺旋生长和(1012)或(1013)面事晶分枝是球状石墨的生长模式。初生球状石墨的变异是孪晶分枝发展的结果,共晶结晶时,球状石墨的变异与石墨结晶的前沿条件有关。

Abstract

作者从紧密石墨铸铁试样中萃取出全部石墨,用扫描电镜对这些石墨观察归类、并研究了各类紧密石墨的形貌和生长模式。着重对常见的三种紧密石墨的形貌和生长特点进行了考察和研究。

C axis oriented Bi 2Sr 1.6 La 0.4 CuO 6 (Bi2201) thin films deposited on flat planes of (100) SrTiO 3 substrates and vicinal planes (off angle~6°) of SrTiO 3 substrates by RF magnetron sputtering were studied with AFM (atomic force microscope).The superconducting transition temperature T C of these thin films reached 29K.Two typical growth modes have been observed.AFM images of thin films on flat planes of substrates showed terraced island growth model.By contrast,the Bi 2201 thin films on vicinal...

C axis oriented Bi 2Sr 1.6 La 0.4 CuO 6 (Bi2201) thin films deposited on flat planes of (100) SrTiO 3 substrates and vicinal planes (off angle~6°) of SrTiO 3 substrates by RF magnetron sputtering were studied with AFM (atomic force microscope).The superconducting transition temperature T C of these thin films reached 29K.Two typical growth modes have been observed.AFM images of thin films on flat planes of substrates showed terraced island growth model.By contrast,the Bi 2201 thin films on vicinal planes of substrates showed a step flow growth mode.To both growth modes,the growth unit is halfunit cell in c axis.No single spiral growth was found in Bi2201 thin films,which was thought to be the typical structure of YBCO thin films.The strong two dimentional property of the Bi system high temperature superconductors governs the growth mode of the thin films.

利用AFM对在(100)和与(100)有6°切偏角的SrTiO3基片上用射频溅射方法制备的高温超导Bi2Sr1.6La0.4CuO6+δ(Bi2201)薄膜的生长模式进行了系统地研究。对应以上两类不同切割的基片,实验观察到两种不同的薄膜生长模式。对切偏角小于0.4°的(100)SrTiO3基片,本征的生长模式是梯田岛模式(Volmer-Weber模式),每层的厚度为c/2(1.25nm);在切偏角为6°的衬底上沉积的Bi2201薄膜则以台阶流模式(Step-flowmode)生长。Bi系高温超导体的本征的二维特性决定了薄膜的生长模式

 
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