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  growth mode
The growth mode developed provides growth rates that are five times higher of large high-quality optical KDP crystals.
      
Control over the parameters of InAs-GaAs quantum dot arrays in the Stranski-Krastanow growth mode
      
At high indium concentrations, a transition from the two dimensional to island growth mode was observed, which was caused by an increase in the mismatch strain.
      
With decreasing droplet diameter, the growth mode of the primary phase α changes from faceted to nonfaceted growth and the eutectic changes from needle-like to anomalous eutectic.
      
The growth mode of (ε + θ + Sb) ternary eutectic exhibits a transition of "divorced eutectic-mixture of anomalous and regular structures-regular eutectic" along the sample axis due to the inhomogeneity of sound field distribution.
      
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  growth model
The problem comes from the discussion of a growth model of self-maintaining protocell in multidimensional case.
      
This paper studies a stochastic endogenous growth model with pollution.
      
An urban economic growth model with endogenous infrastructure allocation
      
In this paper, an urban economic growth model with endogenous infrastructure allocation is given by introducing the two-variable utility function for city's inhabitant.
      
Growth Model System for National Continuous Forest Inventory
      
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  growth modes
The internal losses, and also threshold and spectral characteristics, are correlated with the optical gain and radiative recombination efficiency, which are strongly dependent on the design of the active region and growth modes.
      
The data obtained indicate a considerable difference between the epitaxial growth modes dominating in low and conventional (500-700°C) temperature ranges.
      
The use of these special growth modes stimulates the activated phase decomposition, which leads to the formation of quantum dots with substantially larger localization depth of electrons.
      
The difference between the growth modes of these gold layers on MgO and ona-C is explained by the predominance of respectively nucleation and coalescence phenomena
      
The individual energies are of interest because they may play different roles in the realization of specific growth modes.
      
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  growth models
Dynamic optimization of investments in the economic growth models
      
Fractal clusters in amorphous thin films are examples of growth models.
      
Phenomenological crack-growth models are used to theoretically analyze the statistics of quasi-brittle fracture of solids that undergo static fatigue and whose experimentally measured strength is controlled by kinetic factors.
      
Unfortunately, this idea has long been neglected in widely used growth models.
      
These distributions exhibit a characteristic scaling form similar to cluster size distributions in many other growth models.
      
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  其他


Supported and unsupported silica membranes were prepared by sol-gel process from both TEOS and colioidal silica precursors. There was no pores larger then 1.7nm for unsupported silica membranes obtained from TEOS precursor. The mean pore diameter was 7.5nm for unsupported silica membranes obtained from colloidal silica. Difference of pore size could be mainly attributed to different shapes and growth moulds of polymeric molecules in the sol-gel process. Supported silica membranes with thickness of 15 pm and...

Supported and unsupported silica membranes were prepared by sol-gel process from both TEOS and colioidal silica precursors. There was no pores larger then 1.7nm for unsupported silica membranes obtained from TEOS precursor. The mean pore diameter was 7.5nm for unsupported silica membranes obtained from colloidal silica. Difference of pore size could be mainly attributed to different shapes and growth moulds of polymeric molecules in the sol-gel process. Supported silica membranes with thickness of 15 pm and without large defaults were prepared born TEOS precursor on α-Al2O3 supports without intermediate zone. Percent rejection of BSA was determined to be 75.8%. Nitrogen permeability measurement of the silica membranes on the α-Al2O3 supports with intermediate zone showed that supported silica membranes had Knudsion diffusion characterization.

本文用TEOS和硅溶胶作原料,用溶胶一凝胶法制备了无支撑体和有支撑体的SiO2膜.用TEOS制得的无支撑体SiO2膜,无1.7nm以上的微孔,由硅溶胶制得的无支撑体SiO2膜平均孔径为7.5nm,且孔径分布集中,这种差异主要来自于由不同原料制备的溶胶,其聚合物分子具有不同的形态和生长模式.用TEOS作原料,在无过渡层的α-Al2O3多孔支撑体上制得了无大孔缺陷、厚约15μm的SiO2膜,膜对BSA的百分截留率为75.8%.在有过渡层的α-Al2O3上制得的SiO2膜的纯N2渗透表现为Knudsen扩散特征.起超滤和扩散作用的是SiO2膜层内部的缺陷微孔.

Structure evolution of both TEOS and colloidal silica in the sol-gel process was studied.Supported and unsupported silica membranes were prepared by sol-gel techniques from both TEOS and colloidal silica pre-cursors.Different growth models of polyrner sols due to different precursors in the sol-gel process result in greatdifference in microstructure and pore size distribution of unsupported silica membranes.There will be no poreslarger than 1.7nm for unsupported silica membranes obtained from TEOS precursor....

Structure evolution of both TEOS and colloidal silica in the sol-gel process was studied.Supported and unsupported silica membranes were prepared by sol-gel techniques from both TEOS and colloidal silica pre-cursors.Different growth models of polyrner sols due to different precursors in the sol-gel process result in greatdifference in microstructure and pore size distribution of unsupported silica membranes.There will be no poreslarger than 1.7nm for unsupported silica membranes obtained from TEOS precursor. The mean pore diameter is. 5nm with a narrower pore size distribution for unsupported silica membranes from colloidal silica.Supportedlica membranes with a thickness about 0.8μm and without large defaults were obtained from TEOS precursor.litrogen permeability measurement results indicate that supported silica membranes show Knudsen diffusioncharacterization. Silica membranes without large defaults were prepared only when coating-drying process circulating at least three times.

研究了正硅酸乙酯(TEOS)和硅溶胶水解聚合过程中溶胶聚合物分子的生长过程。用TEOS和硅溶胶作原料,用溶胶-凝胶法制备了有载体和无载体的SiO_2膜。由不同原料引起的聚合物分子的不同生长模式将引起无载体SiO_2膜孔径的较大差异。用TEOS制得的无载体SiO_2膜无1.7nm以上的孔,而用硅溶胶制得的SiO_2膜平均孔径为7.5nm,且孔径分布狭窄。用TEOS作原料可在载体α-Al_2O_3上制得无大孔缺陷厚约0.8μm的SiO_2膜,膜的纯氮气渗透表现出Knudsen扩散特征。制膜时涂膜-干燥循环不少于三次才可避免产生大孔缺陷。

A review is presented of recent progress in the growth of ultra thin metal films.By using scanning tunnelling microscopy,reflection high energy electron diffraction,and thermal energy atom scattering to study the initial stage of film growth ,some new phenomena have been found,such as different growth morphologies (fractal,dendritic and dense growth),the “reentrant layer by layer growth”mode,and the Ag substrate hole formation induced by deposited Au atoms.

综述了近几年来超薄金属膜(只有一个或几个单原子层的薄膜)生长研究中的新进展.利用隧道电子显微术、热原子散射技术、反射高能电子衍射技术等方法,人们发现了许多有趣的新现象:如不同的生长形貌(分形生长、枝晶生长及团状生长),“再现的逐层生长模式”,生长过程中沉积Au原子诱发的Ag衬底表面空洞的形成等

 
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