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 截断 在 无线电电子学 分类中 的翻译结果: 查询用时：0.524秒
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 截断
 truncate
 The scattering field can be computed by using the perfectly matched layer(PML) to truncate the computing field in the transverse plane. 利用完全匹配层(PML)截断计算边界； 短句来源 Also, in this paper, some truncated conditions, which are used to truncate the solving region in FEM in order to decrease the unknown, are introduced such as Absorbing boundary conditions(ABC), perfectly matched layer(PML) and Finite Element-Boun-dary Integral Methods(FEM-BI). 本文还研究了有限元方法的几种截断边界:吸收边界条件,完全匹配层以及有限元-边界积分方法。 短句来源 In this case, we need to truncate the domain to obtain a finite domain for performing numerical calculations. 在这种情况下,我们需要将这无限的区域截断成有限的区域来进行数值计算。 短句来源 For this purpose, we introduce the so-called Perfectly Matched Layers (PMLs) to truncate unbound domains. 为此,我们引进了所谓的完美匹配层(PMLs)来截断无限区域。 短句来源 Truncated sequential probability ratio test(TSPRT) is also a algorithm of TBD, it can improve calculation efficiency by multistage thresholds to truncate tree-structured list of candidate trajectory of low degree of confidence. 截断序贯似然比方法也是一种TBD检测的方法,其通过多级门限截断置信度较低的轨迹树达到提高效率的目的,在动态规划中加入该算法,使之积累的轨迹数减少,降低了计算量和存储量。 短句来源 更多
 “截断”译为未确定词的双语例句
 The result shows that the supply voltage is 1.8 V, the conversion gain is 9.2 dB, input 1 dB compression point is about -3.5 dBm while IIP3 point is at 10.3 dBm, and single side-band noise figure is 17 dB. 仿真结果:在电源电压为1．8 V时,输入三阶截断点(IIP3)为10．3 dBm,输入1 dB压缩点(P-1dB)为-3．5 dBm,增益为9．2 dB,单边带噪声系数为17 dB。 短句来源 Test results show the noise figure is 1.47 dB,power gain 19.97 dB,power dissipation 1.4 mW,image-rejection 42.4 dB and input-refered third-order intercept point -15.53 dBm. 实验测试表明,该低噪声放大器的噪声系数为1.47 dB,功率增益为19.97 dB,输入三阶截断点为-15.53 dBm,镜像抑制为42.4 dB,功耗为1.4 mW。 短句来源 Direct Digital Frequency Synthesis(DDS) technique is introduced and its spurious error is mainly studied. 介绍了直接数字频率合成技术以及分析其杂散误差,对相位截断误差和幅度量化误差进行了傅立叶级数分析研究。 短句来源 An Analysis of DDS Spurious Spectrum Based on Non-uniformly Sampled Model 基于非均匀采样模型的DDS相位截断杂散谱分析 短句来源 First, we employ phase-dithering method. 首先，本文利用相位抖动技术来抑制DDS相位截断误差。 短句来源 更多

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 truncate
 truncate Cobb 1920) by having a longer body, longer cephalic setae, and a wide amphid equal to the respective body diameter. truncate by the distinct striation of the cuticular annulations. All the four species possess a similar mesosomal sculpture, coarse on the mesoscutum and more or less striate on the scutellum, and the solid clava obliquely truncate at apex. A multi-layer checkerboard is used to truncate a waveguide in the FDTD simulation; the result is comparable to that of an unsplit Perfectly Matched Layer (PML) with the same number of layers. The time domain measured equations of invariance (MEI) is applied to truncate computational boundary by the first time in Thompson-FDTD algorithm. 更多
 The paper deals with the method to get the sample of vibration signal of the electric machines, and the digital spectrum of the vibration signal is calculated with FFT. As an example, the calculating results of vibration signal of a synchronous generator are given with 1024 point FFT, and it has done essential analysis to cut of error. 本文论述了电机振动信号的测量与抽样方法,通过对量化的振动信号样本集做快速富里叶变换运算,得到电机振动信号的数字谱图.这种数字谱分析可以在普通数字电子计算机上实现.文中给出了一台同步发电机振动信号的样本集和对其进行1024点FFT运算的功率谱分析结果,同时对截断误差进行了必要的分析. A software for numerical simulation of power MOSFET, called TDSPM, is developed. In the program, DDM model is used. The velocity-electrical field characteristics and generation/recombination effect in high electrical field region for electrons are specially considered for simulating device performances at high voltage including the case of breakdown. The entirely coupled method is used. To enlarge the increment of applied voltage, the truncation method is employed. With the truncation method, the increment of... A software for numerical simulation of power MOSFET, called TDSPM, is developed. In the program, DDM model is used. The velocity-electrical field characteristics and generation/recombination effect in high electrical field region for electrons are specially considered for simulating device performances at high voltage including the case of breakdown. The entirely coupled method is used. To enlarge the increment of applied voltage, the truncation method is employed. With the truncation method, the increment of drain-to-source of 100-200V can be used in saturation region. TDSPM is applied to simulation of VDMOS. The output characteristics are simulated. Internal distributions of some physical parameters are calculated and investigated. Special emphasis is placed on breakdown. At last the software is applied to optimization of VDMOS. 本文编制了功率MOSFET二维稳态分析软件TDSPM程序基于漂移扩散模型,特别考虑了功率器件高压工作状态下的速场特性和强场产生机制,因此可以对器件各工作区(包括击穿区)进行模拟。用全耦合法求解联立方程,用截断法修正迭代结果,大大改善了程序求解的收敛性和稳定性,使求解加压步长可取得很大(饱和区漏压可取100—200V)。用TDSPM模拟VDMOS,得到器件的外部特性曲线和内部物理量分布;着重分析了击穿过程的内部机制;最后用TDSPM对器件进行了优化分析。 The principles, structures and the state-of-the-art of Modulation Doped Field Effect Transistor, Electron Effective Mess Modulation Transistor and the Electron Cutoff Wavelength Transistor are introduced in the paper. The prospect of their development is also briefly discussed. 本文介绍了调制掺杂晶体管、电子有效质量调制晶体管和电子截断波长晶体管的原理、结构和发展动态,并简述了其发展前景。 << 更多相关文摘
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