rf集成电路 rf ic(4) rf ics(0) rf integrated circuits(0)   rf ic      Modeling and Analysis of Spiral Inductors for Si-Based RF IC's      硅衬底RF集成电路中螺旋电感的建模和分析 短句来源      Research on RF IC Technology      RF集成电路工艺探讨 短句来源      Optimizing Q of Spiral Inductor on Silicon for RF IC's      硅衬底RF集成电路螺旋电感品质因数Q的优化 短句来源      With the quality factor(Q)'s expression of p lanar inductor on Si-based RF IC's,inductors' value and quality factor are simulated and computed using Aglient software ADS.      从硅衬底RF集成电路中平面螺旋电感的品质因子Q的表达式出发 ,采用ADS软件模拟计算了平面螺旋集成电感L值与品质因子Q值 . 短句来源   “rf集成电路”译为未确定词的双语例句      To date, most research on CMOS RF circuits is focused on CMOS RF design including some key blocks, and the performance of it is increasing.      由于硅衬底集成电路制造成本相对较低，并且便于数字和模拟部分的集成，使得硅CMOS RF集成电路成为较好的选择。 短句来源      Silicon radio-frequency (RF) integrated circuit spiral inductors are modeled and analyzed. The important effects of substrate loss are included in the analysis.      对硅衬底RF集成电路中的螺旋电感进行电磁场建模 ,考虑了衬底损耗效应 ,并通过电路分析和网络分析技术得到了二端口简化电感模型 . 短句来源      All conclusion and analysis are usef ul for the planar inductor,and will be one of guide lines of the design of the p lanar inductor.      该分析和结论将对硅衬底RF集成电路中片上电感的设计具有重要的指导意义 短句来源      A physical model of spiral inductor on silicon(SIOS) for RF integrated circuit is analyzed,and the substrate losses are considered.      详细分析了RF集成电路硅衬底螺旋电感 (SIOS)的一种物理模型 ,该模型考虑了衬底效应。 短句来源      The performances of RF(radio frequency) integrated circuit(RFIC) spiral inductors on silicon(SIOS) with different planar structures were simulated based on a typical physical model using the HFSS(high frequency structure simulator). The simulated results are well coincident with those from theoretical analysis.      基于RF集成电路硅衬底螺旋电感(SIOS)的典型物理模型,用HFSS(High Frequency Structure Simulator)对中空平面四边形、八边形和圆形螺旋电感的电性能进行了模拟计算,结果与理论分析吻合. 短句来源   相似匹配句对      Research on RF IC Technology      RF集成电路工艺探讨 短句来源      Digital ICs      数字集成电路 短句来源      Optimizing Q of Spiral Inductor on Silicon for RF IC's      硅衬底RF集成电路螺旋电感品质因数Q的优化 短句来源      An Overview of MOSFET Modeling for RF IC's      RF模型综述 短句来源      Recent Advances in Optoelectronic Integrated Circuits      光电子集成电路进展 短句来源 查询“rf集成电路”译词为用户自定义的双语例句     我想查看译文中含有：的双语例句 为了更好的帮助您理解掌握查询词或其译词在地道英语中的实际用法，我们为您准备了出自英文原文的大量英语例句，供您参考。   rf ic A significant method in the way the MCU EM78P447A manipulates the RF reader IC MF RC530's functions used in RF IC card application is presented. 例句来源       Guest Editorial: ISCAS 2002 Special Issue on Analog and RF IC Design 例句来源       Thyristor Input-Protection Device Suitable for CMOS RF IC's 例句来源       Noise considerations for mixed‐signal RF IC transceivers 例句来源       This paper discusses design trade‐offs for mixed‐signal radio frequency integrated circuit (RF IC) transceivers for wireless applications in terms of noise, signal power, receiver linearity, and gain. 例句来源       更多             rf ics Both RF ICs are available in a tiny 6-pin SOT23 package requiring minimal board space. 例句来源       For this purpose, the RF-ICs have to extend by a clock regeneration circuit to enable a cascaded synchronisation. 例句来源       For all the above reasons, there is no actually a reliable standard DFT methodology for RFIC's. 例句来源       His current interest includes RF ICs for wireless communication, in particular, for UWB and multi-mode systems. 例句来源       Here we will look at a number of specific functions found in silicon RF ICs. 例句来源       更多             rf integrated circuits Accurate Characterization of Silicon-On-Insulator MOSFETs for the Design of Low-Voltage, Low-Power RF Integrated Circuits 例句来源       Electrostatic Discharge Protection for RF Integrated Circuits: New ESD Design Challenges 例句来源       Electrostatic discharge (ESD) protection circuit design for radio-frequency (RF) integrated circuits emerges as a new design challenge. 例句来源       This paper presents a new RF testing scheme based on a design-for-testability (DFT) method for measuring functional specifications of RF integrated circuits (IC). 例句来源       His current research interests include mixed signal and RF integrated circuits design, and MEMS related circuits and systems. 例句来源       更多                    Silicon radio-frequency (RF) integrated circuit spiral inductors are modeled and analyzed.The important effects of substrate loss are included in the analysis.Circuit analysis and network analysis techniques are used to extract a two-port compact inductor model,which can be easily used in circuit simulation below certain frequency.The effect of substrate loss upon Q -factor is analyzed using this compact model.             对硅衬底RF集成电路中的螺旋电感进行电磁场建模 ,考虑了衬底损耗效应 ,并通过电路分析和网络分析技术得到了二端口简化电感模型 .该模型在特定的截止频率以下可提供可靠的电路系统仿真 .利用该模型分析了硅衬底的损耗对螺旋电感品质因素 (Q)的影响 . 文摘来源          This paper analyzes the parasitic effect of an integrated inductor in CMOS RF IC and the effect of the layout parameter on inductors quality factor Q . By using the Matlab program the changing of quality factor with various resistivities of substrate, and thicknesses of the metal film and oxide is simulated. Also it analyzes the effect of various layout parameters in various application frequencies. In this paper several principles have been provided and confirmed by experiment.The results have a good a...             分析了体硅 CMOS RF集成电路中电感的寄生效应 ,以及版图参数对电感品质因数 Q的影响 ,并通过Matlab程序模拟了在衬底电阻、金属条厚度、氧化层厚度改变时电感品质因数的变化 ,分析了不同应用频率时版图参数在寄生效应中所起的作用 ,得出了几条实用的设计原则并进行了实验验证 ,实验结果与模拟值符合得很好 ,表明此模拟方法与所得结论均可有效地用于指导射频 (RF)集成电路中集成电感的设计 文摘来源          With the quality factor(Q)'s expression of p lanar inductor on Si-based RF IC's,inductors' value and quality factor are simulated and computed using Aglient software ADS.With the comparison of two group inductors,the impact of increasing turns on quality factor is attained,the quality factor decreases with the increasing turns of inductor.Taking the inductor with value of 3.28nH for example,the turns go up from 2 to 6,while its Q decreases from 4.3(@1.1GHz) to 2.7(@1.4GHz).At the same time,simulations are d...             从硅衬底RF集成电路中平面螺旋电感的品质因子Q的表达式出发 ,采用ADS软件模拟计算了平面螺旋集成电感L值与品质因子Q值 .通过两组电感Q值的对比 ,发现品质因子Q随着电感圈数的增加而减小 .以电感值为 3 2 8nH的设计为例 ,将电感圈数从 2增加到 6 ,计算得到的品质因子Q从 4 3(@1 1GHz)降低到 2 7(@1 4GHz) ,模拟计算结果与理论分析相吻合 .该分析和结论将对硅衬底RF集成电路中片上电感的设计具有重要的指导意义 文摘来源   << 更多相关文摘         相关查询: 集成电路 rf 集成电路业 rf magnifier rf part rf隔离 rf leakage rf路由 rf identification rf soc rf structure rf钉  对查询结果不满意

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