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体硅加工
相关语句
  bulk micro-machined
     Research on Bulk Micro-machined Microelectrode Sensor
     体硅加工微电极传感器研究
短句来源
     Research on Silicon-based Bulk Micro-machined Amperometric Microelectrode Biosensors
     基于体硅加工技术的安培型微电极生物传感器研究
短句来源
     Using IC-compatible silicon as substrate and bulk micromachining technology, this novel bulk micro-machined microelectrode is fabricated with anisotropic silicon wet etching, i.e. in-device micro pool, and SU-8 micro reaction pool.
     以与IC兼容的硅作为基底材料,利用体硅加工工艺,采用各向异性硅腐蚀及SU- 8微反应池方法制成了新型体硅加工电极。
短句来源
     Using IC-compatible silicon as substrate and bulk micromachining technology, this novel bulk micro-machined microelectrode is fabricated with anisotropic silicon wet etching, i. e. in-device micro pool, and SU-8 micro reaction pool.
     以与IC兼容的硅作为基底材料,利用体硅加工工艺,采用各向异性硅腐蚀及SU-8微反应池方法制成了新型体硅加工电极。
  silicon bulk fabrication
     Based on development state of various micro power sources at home and abroad and their researching results,the feasibility of micro fuel cells fabricated by MEMS (micro electro mechanical system) silicon bulk fabrication is analyzed in theory.
     结合目前国内外各种微电源的发展现状,总结微电源的研究成果,从理论上探讨了利用MEMS体硅加工工艺制作微燃料电池的可行性。
短句来源
  “体硅加工”译为未确定词的双语例句
     PZT thin film was fabricated on substrate Pt/Ti/SiO2/Si<100> by sol -gel method, then annealed in temperature of 600℃ , PZT micro -force sensors were manufactured by MEMS silicon manufacturing processes.
     PZT薄膜在基体Pt/Ti/SiO2/Si(100)上用溶胶一凝胶法制备,然后在600℃下退火。 PZT微力传感器完全由MEMS体硅加工工艺来实现。
     The microcantilever was fabricated by silicon bulk micromachining. Lead zirconate titanate PbZr0.5Ti0.5O3(PZT) thin film was prepared by sol-gel method on Pt/Ti/SiO2/Si substrate. The film has single perovskite phase structure and (111) preferred orientation.
     悬臂梁结构采用体硅加工工艺制作,锆钛酸铅(Pb(Zr,Ti)O3,PZT)压电薄膜采用sol-gel方法在Pt/Ti/SiO2/Si衬底上制作,压电薄膜具有完整的钙钛矿结构和(111)择优取向。
     The design idea and fabrication processes of this infrared detector are described in detail. A prototype with sandwich structure has been fabricated using silicon bulk micromachining process. Tests together with the feedback circuit show that the resolution of the electron tunneling displacement transducer is up to 10 -4 nm/Hz and the infrared detector prototype has been able to sense infrared signal.
     介绍了一种新型的非制冷高灵敏度硅微机械电子隧穿红外探测器的工作原理 ,详细描述了这种红外探测器的设计思想和制作工艺 ,采用微机械体硅加工的三层硅结构制作出探测器原理样品 ,通过和反馈电路 (包括前置放大电路 )连接测试表明 :电子隧穿位移传感器部分的分辨率可达 10 -4 nm/ Hz,红外探测器样品已能敏感红外信号。
短句来源
     This novel silicon bulk micromachining technology can be widely used as a standard process in MEMS to fabricate various micro sensors and micro actuators.
     本论文提出的新体硅工艺,除了可以制作这个加速度传感器,还有潜力成为MEMS体硅加工技术中的一项标准工艺,用以在许多场合使用普通硅片替代SOI硅片制作传感器与执行器。
短句来源
     The silicon force sensor using bulk silicon process has lots of advantages such as batch producible, low cost, high precision, small driving force, high reliability, low power consuming, small dimension, light weight and quick response, etc.
     由于微机械工艺采用的技术多是半导体工业的硅表面工艺和体硅加工工艺,因此这种传感器可以大批量制造,且具有低成本、高精度、低驱动、高可靠性、低功耗、占用空间小、重量轻和响应速度快等优点。 为此本文提出了采用微机械工艺加工微力传感器的办法。
短句来源
更多       
  相似匹配句对
     Research on Bulk Micro-machined Microelectrode Sensor
     加工微电极传感器研究
短句来源
     A Tunneling-Based Accelerometer in Bulk Silicon Processes
     隧道加速度计
短句来源
     Research on Silicon-based Bulk Micro-machined Amperometric Microelectrode Biosensors
     基于加工技术的安培型微电极生物传感器研究
短句来源
     THE PROCESSING CHARACTERS OF MINERAL FIBRES ULTRAFINE POWDER
     矿物纤维的超细粉加工特性
短句来源
     Measurement of Machining Quality of Scroll Wrap
     涡旋加工质量的检测
短句来源
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The working principle of a novel,uncooled,high sensitivity silicon micromachined electron tunneling infrared detector is introduced.The design idea and fabrication processes of this infrared detector are described in detail.A prototype with sandwich structure has been fabricated using silicon bulk micromachining process.Tests together with the feedback circuit show that the resolution of the electron tunneling displacement transducer is up to 10 -4...

The working principle of a novel,uncooled,high sensitivity silicon micromachined electron tunneling infrared detector is introduced.The design idea and fabrication processes of this infrared detector are described in detail.A prototype with sandwich structure has been fabricated using silicon bulk micromachining process.Tests together with the feedback circuit show that the resolution of the electron tunneling displacement transducer is up to 10 -4 nm/Hz and the infrared detector prototype has been able to sense infrared signal.

介绍了一种新型的非制冷高灵敏度硅微机械电子隧穿红外探测器的工作原理 ,详细描述了这种红外探测器的设计思想和制作工艺 ,采用微机械体硅加工的三层硅结构制作出探测器原理样品 ,通过和反馈电路 (包括前置放大电路 )连接测试表明 :电子隧穿位移传感器部分的分辨率可达 10 -4 nm/ Hz,红外探测器样品已能敏感红外信号。

Concerning the development history of MEMS technology, the present paper introduces a state of the art developing direction of silicon based MEMS machining, indicating that there are two main developing directions. One is sacrificial layers technology, and the other is bulk micromachining. Sacrificial layers technology is developing towards multiple layers and integration. Bulk micromachining mainly includes combination of bonding and deep etching, pursuit to big mass and small stress, and three...

Concerning the development history of MEMS technology, the present paper introduces a state of the art developing direction of silicon based MEMS machining, indicating that there are two main developing directions. One is sacrificial layers technology, and the other is bulk micromachining. Sacrificial layers technology is developing towards multiple layers and integration. Bulk micromachining mainly includes combination of bonding and deep etching, pursuit to big mass and small stress, and three dimensional fabrications technology which is the developing direction of new body silicon technology. Standard process fabrication is becoming more and more important for MEMS study.

结合MEMS技术的发展历史 ,概括了当今硅基MEMS加工技术的发展方向。指出表面牺牲层技术和体硅加工技术是硅基MEMS加工技术的两条发展主线 ;表面牺牲层技术向多层、集成化方向发展 ;体硅工艺主要表现为键合与深刻蚀技术的组合 ,追求大质量块和低应力以及三维加工。SOI技术是新一代的体硅工艺发展方向 ;标准化加工是MEMS研究的重要手段

Silicon can be bonded tightly with silicon, glass or other materials by the chemical and physical effects. The silicon bonding technology is generally combined with surface silicon machining and bulk silicon machining in MEMS. This paper shows a few of silicon bonding technologies which are used in MEMS conventionally. These technologies include gold-silicon eutectic bonding, silicon-glass anodic bonding, silicon-silicon direct bonding and glass solder sintering. At the same time, their bonding mechanism, process,...

Silicon can be bonded tightly with silicon, glass or other materials by the chemical and physical effects. The silicon bonding technology is generally combined with surface silicon machining and bulk silicon machining in MEMS. This paper shows a few of silicon bonding technologies which are used in MEMS conventionally. These technologies include gold-silicon eutectic bonding, silicon-glass anodic bonding, silicon-silicon direct bonding and glass solder sintering. At the same time, their bonding mechanism, process, advantages and disadvantage are discussed in detail.

硅片键合技术是指通过化学和物理作用将硅片与硅片、硅片与玻璃或其它材料紧密地结合起来的方法。硅片键合往往与表面硅加工和体硅加工相结合,用在MEMS的加工工艺中。常见的硅片键合技术包括金硅共熔键合、硅/玻璃静电键合、硅/硅直接键合以及玻璃焊料烧结等。文中将讨论这些键合技术的原理、工艺及优缺点。

 
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