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封装     
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  encapsulation
    Under 150cd/m2 intensity, other device's lifetime(ITO\H40 \Alq3\Mg:Ag) reach one hour without any encapsulation at room temperature.
    未经封装的另一种器件(ITO\H40\Alq3\Mg:Ag),发光强度由150cd/m2衰减到50cd/m2的时间达到1h.
    The Effect of the AAL5 Encapsulation Scheme on MPEG-2 Receiver Timing Recovery
    AAL5封装对MPEG-2终端定时恢复的影响
短句来源
    The Application of Epoxy Resin to the Electronic Encapsulation
    环氧树脂在电子封装中的应用及发展方向
短句来源
    Development of Wafer Incision Machine for IC Encapsulation
    IC封装设备划片机的研制
短句来源
    LED's Optical Encapsulation Structure Design Based on Monte Carlo Simulation Method
    基于蒙特卡罗模拟方法的光源用LED封装光学结构设计
短句来源
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  packaging
    Study on the Reliability of SMT Solder Joint in Electronic Packaging
    电子封装中表面贴装焊点的可靠性研究
短句来源
    Reliability Research on Electronic Packaging
    电子封装可靠性研究
短句来源
    Research on MEMS Device Design,Packaging Process and Application
    MEMS器件设计、封装工艺及应用研究
短句来源
    The Investigation of 2-DOF High-speed and High-precision Positioning System for IC Packaging
    面向IC封装的两自由度高速精密定位系统研究
短句来源
    Interfacial Reaction and Reliability in Lead-free Electronics Packaging
    无铅电子封装中的界面反应及焊点可靠性
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更多       
  package
    Metallized Package of Semiconductor Light Source Devices
    半导体光源器件的金属化耦合封装
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    Types of LSI High Density Package
    LSI高密度封装的类型
短句来源
    CAD Speeds and Simplifies Ceramic IC Package Design
    CAD加速和简化了IC的陶瓷封装设计
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    Low Dielectric Constant Multilayer Glass-Ceramic Substrate with Ag-Pd Wiring for VLSI Package
    适用于VLSI封装的用Ag-Pd布线的低介电常数多层玻璃—陶瓷基板
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    Electrical Characteristics of Package for High Speed ASIC
    高速ASIC封装的电性能
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  packages
    Trend of Packages for Semiconductor Devices and IC's
    半导体器件和集成电路封装的发展趋势
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    Thermal Evaluation of VLSI Packages
    VLSI高密度封装的热性能研究
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    Application of New Mullite Ceramics to High Density Packages
    新型莫来石瓷在高密度封装中的应用
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    Design of Metallizations and Components for Aluminium Nitride Packages for VLSIC
    VLSIC用AlN封装的金属化及元件设计
短句来源
    Study and Application of Piezoresistive Stress Test Chip for IC Packages
    压阻型集成电路封装应力测试芯片的研究与应用
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      encapsulation
    The encapsulation of the CaCO3 filler treated with POE-g-MAH was caused by the strong chemical reaction between the elastomer and CaCO3 particles.
          
    Encapsulation of Catalase in Polyelectrolyte Microspheres Composed of Melamine Formaldehyde, Dextran Sulfate, and Protamine
          
    The encapsulation of salicylic acid changes its crystal structure and thermal stability.
          
    During heat treatment of lead selenide films doped with iodine, the microstructure of the film undergoes a drastic transformation of the "encapsulation" type and, simultaneously, the phase composition changes sharply.
          
    This indicates that the mechanism of the reaction is unaltered by encapsulation of the complex although considerable difference exists in the rate of catalysis.
          
    更多          
      packaging
    The antibacterial ability of copper has a potential application in the field of disinfection, food packaging and piping of drinking water.
          
    The results indicate that the sensor presented better performances and that the bonding techniques can be used in MEMS packaging.
          
    Light-weight high-silicon aluminum alloys are used for electronic packaging in the aviation and spaceflight industry.
          
    The present paper summarizes the recent technical progresses in large process plants and the aviation industry, micro chemo-mechanical systems, fuel cells, high-temperature electronics, and packaging and coating technologies.
          
    Chromatin is designed to allow both tight DNA packaging and proper functioning and regulation of enzymes such as DNA and RNA polymerases.
          
    更多          
      package
    First, a detailed multi-body dynamic model of the vehicle is established by using the ADAMS/View software package, which is followed by validation using a vehicle field test.
          
    The data collected by image analysis were analyzed statistically with Statistical Package for the Social Science.
          
    In the end, the performance of the scheduling strategy based on the fault-tolerant grid-scheduling model is analyzed by an software package, named SPNP.
          
    Fabrication of an electronic package box of SiCP/Al composites with high volume SiCP
          
    In this paper, a SiCP preform was prepared by Powder Injection Molding (PIM), and the melting aluminum was injected into the SiCP preform by the pressure infiltration method to manufacture an electronic package box of SiCP (65%)/Al composites.
          
    更多          
      packages
    This thesis was mostly based on the study of more than 2 000 packages of bryophytes which were mainly collected by the authors in Mt.
          
    These meshes or grids can be easily incorporated into existing numerical software packages for further mechanical analysis and failure prediction of the geomaterials under external loading.
          
    It was shown that a great deal of convertors, N (N - 1), is required when using multiple computer systems and applied software packages at various stages of the product life cycle.
          
    Correlation functions measured with the dynamic light scattering instruments are processed using the CONTIN and KLUB software packages.
          
    Commercially available standard software packages are used for image and data processing.
          
    更多          


    The design principles have been discussed in detail through analysing the operation features of the Gunn diode at higher mm-wave band. An emphasis is laid on the analysis of the contradiction in diode design between the requirements of the thermal parameters and RF parasitics that the formulas are deducted to estimate the design parameters of the diode chip and package. The diode processing technologies with the use of GaAs/ AsCl3/H2 VPE, non-CN amd non-NH4 plated gold-heatsink, and cross-gold ribbon bonding...

    The design principles have been discussed in detail through analysing the operation features of the Gunn diode at higher mm-wave band. An emphasis is laid on the analysis of the contradiction in diode design between the requirements of the thermal parameters and RF parasitics that the formulas are deducted to estimate the design parameters of the diode chip and package. The diode processing technologies with the use of GaAs/ AsCl3/H2 VPE, non-CN amd non-NH4 plated gold-heatsink, and cross-gold ribbon bonding are introduced. The resultant V-band diodes have maximum power output of 130mW and maximum efficiency of 3.8%. The oscillators using these diodes have been used successively in 50°K, 4GHz uncooled low-noise parametric amplifiers and microwave remote-radiometers. The diodes exhibit output over 10mW at 94GHz in harmonic oscillation manner. The paper also presents the reliability investigation of the diode; and the predicted average operation life time at room-temperature is over 1.4×10eh.

    通过对体效应二极管在毫米波高端工作特点的分析,详细讨论了6毫米GaAs体效应管的设计原则.着重探讨了器件设计中热参数与微波寄生参数要求间的矛盾,推导得到一组计算公式用以确定器件管芯与封装的设计参数.介绍了采用GaAs/AsCl_3/H_2汽相n~#外延、无氰无铵电镀金热沉、双金带十字引线等措施的器件制备工艺.研制的二极管在V波段的最大输出功率达130mW,最高效率为3.8%;以谐波方式在94GHz下输出大于10mW.本文还重点报道了器件可靠性研究的情况,器件预期的室温平均工作寿命超过1.4×10~8小时.使用该器件的振荡器已成功地用于常温50°K低噪声参放及微波遥感等方面.

    This manuscript described the principle and design of VHF/UHF silicon electrical tuning diodes. The mesa structure was designed for the series of model WB30 VHF/UHF tuning diodes. Chips were packed in the microstrip ceramic packages. The characteristics of this tuning diodes were developed, with the capacitance ratio C-3/C-25≥4.5, the series resistance rs≤1.5Ω, the cutoff frequency fc≥12GHz(VHF band);and with rs≤0.8Ω, fc≥ 22GHz (UHF band). The performance of model WB30 is the same as the 1S2209/1S2208 VHF/UHF...

    This manuscript described the principle and design of VHF/UHF silicon electrical tuning diodes. The mesa structure was designed for the series of model WB30 VHF/UHF tuning diodes. Chips were packed in the microstrip ceramic packages. The characteristics of this tuning diodes were developed, with the capacitance ratio C-3/C-25≥4.5, the series resistance rs≤1.5Ω, the cutoff frequency fc≥12GHz(VHF band);and with rs≤0.8Ω, fc≥ 22GHz (UHF band). The performance of model WB30 is the same as the 1S2209/1S2208 VHF/UHF silicon epitaxial planar tuning diode made by NEC company. WB30 tuning diodes were used for the UHF TV converter, including a amplifier and a mixer, with a gain of 5-6dB.

    本文简述了器件原理,并给出VHF/UHF硅电调变容管的设计结果.WB30系列VHF/UHF硅电调谐变容二极管,其管芯为双外延台式钝化结构,采用金属陶瓷微带管壳封装.制得的器件,其变容比 C_3/C_(25)≥4.5,串联电阻 r≤1.5Ω,截止频率f_c≥12GHz(VHF波段);及r_s≤0.8Ω,f_c≥22GHz(UHF).结果表明WB30型VHF/UHF硅电调变容管已与日本NEC公司的VHF/UHF硅外延平面电调变容管1S2209/1S2208的性能相当.电调变容管的统调特性及其串联电阻直接与电视高频头的增益相关.用WB30型电调变容管制作的UHF频段电视机用高频头——一级高放及一级二极管混频,已获得5~6dB的增益.

    This paper presents the design considerations and calculated results of the 90-130 GHz silicon P+NN+ IMP ATT diode. Based on these parameters, experimental diodes in a ultra-miniaturized ceramic package have been fabricated, operating in the frequency range from 90 to 126 GHz, the diodes feature an output of power larger than 30 mW with an efficiency η≥1.5%, and the optimum results are 115mW at 103 GHz with an efficiency η of 3.6%.

    ——本文叙述了三毫米硅P~+NN~+崩越二极管的参数设计考虑及结果.根据这一考虑而研制的用超小型陶瓷管壳封装的硅P~+NN~+崩越二极管在90到126GHz范围内功率输出大于30mW,效率η≥1.5%.最佳结果为103GHz下输出115mW,η为3.6%.

     
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