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分区变分
相关语句
  zone-variational
    Zone-variational Method and Energy Band calculations
    分区变分法和固体能带的计算
短句来源
    Zone-Variational Method for Calculating Impurity Levels in Semiconductors
    计算半导体中杂质能级的分区变分方法
短句来源
    On this basis the self-consistent energy band calculation and the empirically adjusted method are discussed, thus a general picture for the zone-variational method is shown.
    在此基础上又讨论了自洽能带计算和经验调整能带计算方法,从而给出了分区变分法的一个完整的概貌.
短句来源
    The band structures for GaAs, GaP, AlAs and A1P are calculated with a zone-variational method.
    使用分区变分法计算了GaAs、GaP、AlAs和AlP的能带。
短句来源
  “分区变分”译为未确定词的双语例句
    Finally this method is compared with the existed computational methods for energy band in respects of the computa-tional ways and means, potential character and the matching of wave functions, from which the merits of this method is seen.
    最后从计算方法、势场特性和波函数衔接等方面对现有能带计算方法进行了分析和比较,从中看出分区变分法的优点.
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The zone-variational method and energy band calculations f or Ⅳ group semiconductors are described in this paper. The energy bands for C, Si, and Ge obtained by this method are also given. On this basis the self-consistent energy band calculation and the empirically adjusted method are discussed, thus a general picture for the zone-variational method is shown. The energy band for Si-Ge alloy is calculated using a new computational model, from which a trial test of computing the electronic state in disordered...

The zone-variational method and energy band calculations f or Ⅳ group semiconductors are described in this paper. The energy bands for C, Si, and Ge obtained by this method are also given. On this basis the self-consistent energy band calculation and the empirically adjusted method are discussed, thus a general picture for the zone-variational method is shown. The energy band for Si-Ge alloy is calculated using a new computational model, from which a trial test of computing the electronic state in disordered system is made. Finally this method is compared with the existed computational methods for energy band in respects of the computa-tional ways and means, potential character and the matching of wave functions, from which the merits of this method is seen.

本文简要介绍了分区变分法和Ⅳ族半导体能带的计算,给出了金刚石、硅和锗的能带.在此基础上又讨论了自洽能带计算和经验调整能带计算方法,从而给出了分区变分法的一个完整的概貌.用新的合金能带计算模型计算了锗硅合金的能带,对无序体系电子态的计算进行了一次初步的尝试.最后从计算方法、势场特性和波函数衔接等方面对现有能带计算方法进行了分析和比较,从中看出分区变分法的优点.

The band structures for GaAs, GaP, AlAs and A1P are calculated with a zone-variational method. The computed band structures using three adjusting parameters agree with experimental results on the whole. Some energy level orders are different from the existent theoretical results. The alloy band structures for GaAsxP1-x, AlAsxP1-x, GaxAl1-As and GaxAl1-xP are calculated using the resulted crystalline potential. Some new structures related to the band gaps varying with alloy composition are obtained.

使用分区变分法计算了GaAs、GaP、AlAs和AlP的能带。运用三个势场调整参数所算出的能带和实验结果基本吻合。在个别能级次序方面得到了同以往理论不同的结果。用所得的晶体势进一步计算了GaAs_xP_(1-x)、AlAs_xP_(1-x)、Ga_xAl_(1-x)As和Ga_xAl_(1-x)P的合金能带。在带边随组分而改变的关系中得到了一些新的结构。

A new method for calculating the impurity levels in semiconductors is proposed based onthe concept of zone-variation.The contributions from the short range and long range poten-tial of impurity atom and the periodic potential for the host crystal are taken into account inthis method.It is a kind of first principle computational method and is convenient for com-plex defect cluster and self-consistem calculations.The shallow levels P, As, Sb and deep levelsS~+,Se~+, Te~+, S, Se, Te in Si are computed using this...

A new method for calculating the impurity levels in semiconductors is proposed based onthe concept of zone-variation.The contributions from the short range and long range poten-tial of impurity atom and the periodic potential for the host crystal are taken into account inthis method.It is a kind of first principle computational method and is convenient for com-plex defect cluster and self-consistem calculations.The shallow levels P, As, Sb and deep levelsS~+,Se~+, Te~+, S, Se, Te in Si are computed using this method. The trend of impurity levelscomputed agrees basically with the experiment results.Finally,the mechanism of formation forshallon and deep levels and the significance of the zone-variation are discussed.KEY WORDS:Semiconductors, Impurity levels, Deep level, Shalsow level, Impurity po-tential Crystalline potential, Wavefunction, Zone-variational method

本文从分区变分的概念出发提出了一种计算半导体中杂质能级的新方法.它计入了杂质原于的短程势、长程势和主晶格周期势的贡献,是一种第一原理性的计算方法,便于进行自治计算和考虑缺陷集团的电子态.使用这种方法计算了硅中的浅杂质 P、As、Sb和深杂质S~+、Se~+、Te~+、S、Se、Te的能级.算得的杂质能级变化趋势基本上和实验结果相符.最后讨论了浅杂质和深杂质能级的形成机理和分区变分理论的意义.

 
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