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体硅腐蚀
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  bulk etching
     The experimental results indicate that in the cantilever-mass system formed by EPW bulk etching, there exists a tensile stress of 40~160MPa in the cantilever and mass, averagely, the residual tensile stress in the micro-cantilever is larger, reaching 100MPa.
     测试结果表明EPW体硅腐蚀形成的梁—质量块系统中梁与质量块上存在40~160MPa的张应力,微梁上的残余张应力平均达到100MPa;
短句来源
     A Novel Cellular Automata Model for Silicon Bulk Etching Simulation Handling High Index Planes
     考虑高指数晶面的体硅腐蚀模拟新CA模型
短句来源
     In order to control the flow direction more effectively, a silicon passive valve is fabricated using double-faced bulk etching technology.
     为了使微型泵更有效地控制流体的流向,本文利用双面体硅腐蚀工艺制作悬臂梁型硅被动阀,并利用该被动阀制成了一种被动阀微泵和一种复合阀微泵。
短句来源
     A novel three-dimensional (3D) continuous cellular automata (CA) model is presented for the simulation of silicon bulk etching processes.
     针对目前体硅腐蚀(硅各向异性腐蚀)的3DCA模型无法引入(211),(311),(331),(411)等较多高密勒指数晶面,模拟精度不高的问题,建立了一种高精度的体硅腐蚀模拟的新3D连续CA(元胞自动机)模型.
短句来源
     Simulation results agree with experimental results,indicating that the simulation accuracy has been increased. This is useful for the research of silicon bulk etching process and micro-electro-mechanical system (MEMS) design.
     模拟结果与实验结果一致,证明了模型的模拟效果,对体硅腐蚀模拟研究和提高MEMS设计水平具有一定的实用意义.
短句来源
  bulk silicon etching
     Research on Bulk Silicon Etching for Piezoelectric Miniature Microphone and Capacitive Miniature Microphone
     用于压电和电容微麦克风的体硅腐蚀相关研究
短句来源
  bulk silicon wet etching
     The procedure includes SiN deposition, UV lithography with karl Suss double alignment lithoography system, gold electroplating absorber and bulk silicon wet etching to form support film.
     整个过程包括沉淀氮化硅、采用KarlSuss双面对准曝光机进行UV光刻、电化学淀积金吸收体、体硅腐蚀形成支撑膜等。
短句来源
  “体硅腐蚀”译为未确定词的双语例句
     Different V-shaped electrothermal actuators are designed and fabricated using the surface and bulk silicon micromachining process respectively. And the design experience is improved.
     采用表面硅牺牲层工艺和体硅腐蚀工艺分别设计、制造了具有不同结构参数的V型电热微致动器,经过几次版图设计和流片制作,积累了两种工艺条件下硅微机构设计方面的经验。
短句来源
     The micro channels of fuel cells are obtained by bulk silicon KOH etching, and the platinum layer is deposited as an electrode to collect the current.
     该微型燃料电池采用KOH体硅腐蚀技术得到流体通道,并溅射金属Pt层作为收集电流的电极。
短句来源
     The prototype features a unique 3D air-breathing cathode structure fabricated using KOH etching and double-side lithography.
     其特点在于,利用KOH体硅腐蚀和双面光刻工艺制作了一种独特的三维自吸氧阴极结构.
短句来源
     These are researched and resolved by several methods of protection for the front side of the wafer and techniques of self-halt for etching.
     从各种正面保护方法和体硅腐蚀自停止技术两方面对这一问题进行了研究和解决。
短句来源
     The top and bottom layers are poly-gate and n-well Si in the CMOS process, respectively, while the center layer is the gate SiO_2. After CMOS process, selectively etching bulk silicon, PN junction self etch-stop, and anodic bonding to the glass are used to get the microstructure.
     电容的上下极板分别为CMOS工艺中的多晶硅栅和n阱硅,中间介质层为栅氧化层. 在CMOS工艺加工完之后,利用选择性的体硅腐蚀、pn结自停止腐蚀以及阳极键合等MEMS后处理工艺来得到传感器结构.
短句来源
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  bulk etching
Etching characteristics of different planes of epidote indicate that the bulk etching rate Vgfor the plane (100) is a minimum and also that no angular track orientation anisotropy is observable on this or on the basal plane.
      
A combinative approach of anisotropic bulk etching and modified plasma etching has been successfully employed in a single wafer to fabricate silicon masters for the hot embossing process.
      
The photolithography and bulk etching technologies were utilized to construct the thin-film heater and DNA reaction chambers.
      
Direct determination of bulk etching rate for LR-115-II solid state nuclear track detectors
      
Dependence of bulk etching rate on temperature of the etching solution is investigated.
      
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Up to date, deep X ray lithography is an important technigue for producing high aspect ratio MEMS structure. A LIGA mask technology based on silicon process technique and double side alignment is presented. The processing technology is simple. The overlay or multi exposure in deep X ray lithography could be well solved using the mask . The fabrication procedure of the mask and results of the deep X ray lithography are given. The procedure includes SiN deposition, UV lithography with karl Suss double alignment...

Up to date, deep X ray lithography is an important technigue for producing high aspect ratio MEMS structure. A LIGA mask technology based on silicon process technique and double side alignment is presented. The processing technology is simple. The overlay or multi exposure in deep X ray lithography could be well solved using the mask . The fabrication procedure of the mask and results of the deep X ray lithography are given. The procedure includes SiN deposition, UV lithography with karl Suss double alignment lithoography system, gold electroplating absorber and bulk silicon wet etching to form support film. The satisfied results are obtained by the mask when the lithography is carried out on the X ray beam of BEPC SR Lab.

深X射线光刻是制作高深宽比MEMS结构的一个重要方法。提出一种基于硅工艺和双面对准技术的LIGA掩模技术 ,工艺十分简单。采用该掩模 ,可进一步解决深X射线光刻中的重复对准多次曝光问题。给出了该掩模设计制作工艺过程及深X射线光刻结果。整个过程包括沉淀氮化硅、采用KarlSuss双面对准曝光机进行UV光刻、电化学淀积金吸收体、体硅腐蚀形成支撑膜等。利用该掩模在北京BEPC的X射线光刻光束线上进行曝光 ,获得了满意结果。

Ultrasonic agitation is introduced to reduce the surface roughness and im prove the etching uniform ity in the process of m ost comm only used KOH anisotropic etching.Etching characteristics of(10 0 ) Si are studied and compared with that without agitation source.Smooth pyramid- free surfaces are obtained with the uniform etching depth within the resolution of1μm on the same wafer being achieved at the same time.The results reveal that the ultrasonic agitation is a very efficient approach for high precision...

Ultrasonic agitation is introduced to reduce the surface roughness and im prove the etching uniform ity in the process of m ost comm only used KOH anisotropic etching.Etching characteristics of(10 0 ) Si are studied and compared with that without agitation source.Smooth pyramid- free surfaces are obtained with the uniform etching depth within the resolution of1μm on the same wafer being achieved at the same time.The results reveal that the ultrasonic agitation is a very efficient approach for high precision bulk micromachining.

对使用超声搅拌和不加搅拌时 (10 0 )单晶硅的腐蚀特性进行了研究和对比 .使用超声搅拌 ,可以得到光滑的、无小丘的腐蚀表面 ,整个硅片腐蚀深度的误差不超过 1μm.实验结果表明 ,该方法可以有效地实现精密 KOH各向异性体硅腐蚀

A micro-optic-mechanical F-P cavity switch with composite membrane driven by electrostatic actuator for fiber-optic communication applications is reported.The area of the switch is 1.5mm×1.5mm.To eliminate the effect of residual stress,the beams are sandwiched layers consisting of oxide/nitride,where the large tensile stress of nitride is partly compensated by the compression stress of oxide.Therefore,the initial deflection is greatly reduced with the mechanical sensitivity increased at the same time.The silicon...

A micro-optic-mechanical F-P cavity switch with composite membrane driven by electrostatic actuator for fiber-optic communication applications is reported.The area of the switch is 1.5mm×1.5mm.To eliminate the effect of residual stress,the beams are sandwiched layers consisting of oxide/nitride,where the large tensile stress of nitride is partly compensated by the compression stress of oxide.Therefore,the initial deflection is greatly reduced with the mechanical sensitivity increased at the same time.The silicon bulk micromachining is not only useful for decreasing the insertion loss of the switch,but also easily fixing the fibers and their accurate alignment.The driven voltage is about 20V,and isolation of shutting status is 87% and insertion loss 0.15dB.

研制了一种用于 WDM光通信系统的多层介质膜 Fabry- Perot腔结构式光开关 ,面积为 1.5 m m× 1.5 m m.光开关采用多层复合膜消除内应力 ,防止产生过度变形 ;中心的十字复合梁有利于提高机械灵敏度 ,降低驱动电压 .体硅腐蚀出的硅杯既减小了光开关的插损 ,又便于端面输入输出光纤的精确对准与固定 ,有效降低封装成本 .制成的开关转换电压为 2 0 V,关态隔离度为 87% ,开态插损为 0 .15 d B.其结构和工艺简单 ,易于与 IC工艺相结合形成规模生产 ,如增加膜的层数便能制成基于 F- P干涉仪结构的滤波器 .

 
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