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带电
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    The paper indicates the external defect character of charging equipment,and analyzes factors that influence external defect infrared inspection of charging equipment,as well as expounds the detailed application of infrared inspection technology in heating defect estimation,also it indicates the wide developing foreground of infrared inspection technology.
    文章指出了带电设备外部缺陷的特点,分析了影响带电设备外部缺陷红外检测的因素,论述了红外线检测技术在发热缺陷判别中的具体应用,同时也指出了红外线技术有着广阔的发展前景。
短句来源
    GEOMETRIC PROPERTIES OF CHARGED -(PA)_4-(PPP)_m-(PA)_4-TRIBLOCK COPOLYMERS
    PA和PPP三嵌段共聚物的带电态研究
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    Irradiation Effects on Optic Character in GaAs/AlGaAs Quantum Wells
    带电粒子辐射对GaAs/AlGaAs多量子阱光学性质的影响
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    Study of the interface charge between SP and silicon semiconductor
    聚酯改性硅漆与硅半导体界面带电规律的研究
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    Golden Finger Design for Hot-Plug-in Boards
    带电插拔的金手指设计
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The saturable reactor with an inductive d.c. load is one of the most basic circuits of magnetic amplifiers. The non-linearities involved in its operation are very peculiar, and thus bring great difficulties to any attempt on its theoretical analysis.On the basis of the actual current-wave forms, a new set of formulas for the static and dynamic characteristics of the circuit is rigorously derived in this paper. It is shown that the static characteristic of a S. R. with a d.c. inductive load is sensitive particularly...

The saturable reactor with an inductive d.c. load is one of the most basic circuits of magnetic amplifiers. The non-linearities involved in its operation are very peculiar, and thus bring great difficulties to any attempt on its theoretical analysis.On the basis of the actual current-wave forms, a new set of formulas for the static and dynamic characteristics of the circuit is rigorously derived in this paper. It is shown that the static characteristic of a S. R. with a d.c. inductive load is sensitive particularly to the variations of the resistance ratios, r_x/r_y and R_L/r_y and that the transfer function of the circuit is of the form: Y(s)=(1+T_as)/(1+T_1s+T_2s~2)Experiments indicate that the formulas derived in this paper are correct and easy to use. They agree very satisfactorily with the experimental data and are valid for most cases. Many anomalies, which could hardly be explained before in the operation of the circuit, are found now to be not peculiar at all.

带电感性直流负载的扼流磁放大器,是磁放大器中最基本的典型线路之一,其静、动态特性的非线性非常突出,给理论分析带来很大困难. 在实测波形分析的基础上,本文严谨地推导得一组新的公式,这些公式表明:带电感性直流负载扼流磁放大器的静态特性,与电路的阻值比(r_x/r_y和R_L/r_y)密切相关,而其传递函数的形式则为 Y(s)=(1+7a~s)/(1+T_1s+T_2~2S~2). 这些结果与本文所引述的各文献[1-8,11]对同一问题的公式是不同的.大量实验证明:本文推导得的这些公式是正确的,与实验数据符合得很好,具有很大的通用性,并解释了一些过去所难以解释的“不正常”现象.

A new gauge proposed in this paper is based on the electrostatic saddle field confinement which is capable of producing long electron paths and hence efficient gas phase ionization. The performance of the experimental gauge(φ20mm)is stated as follows:V_a=600V, V_s=10V, V_k=43.5V, it's sensitivity is 850 torr~(-1), hence it requires less electron current(1-10μA) and filament power than a standard BA-gauge.The feature of the proposed gauge compared with existing ultrahigh vacuum gauges are mainly very small electrode...

A new gauge proposed in this paper is based on the electrostatic saddle field confinement which is capable of producing long electron paths and hence efficient gas phase ionization. The performance of the experimental gauge(φ20mm)is stated as follows:V_a=600V, V_s=10V, V_k=43.5V, it's sensitivity is 850 torr~(-1), hence it requires less electron current(1-10μA) and filament power than a standard BA-gauge.The feature of the proposed gauge compared with existing ultrahigh vacuum gauges are mainly very small electrode size and low outgas rate and low gas sorption.In according to our measurements and comparison with Fitch' s experiments, the low pressure limit is about 3×10~(-11) torr.

基于Mcilraith型带电粒子振荡器的工作原理,本文提出了一种球形结构的微型电离计的设计方案,并探讨了结构的可行性。作者初步进行了结构设计和性能的模拟试验。其结果,在阳极电压V_4=600伏,球电压V_3=10伏,灯丝偏压V_K=43.5伏下,规管灵敏度K=850托。在已测定的压强P=1×10~(-5)~5×10~(-5)托和I_e=1~12微安范围內,离子流I_i与压强P,以及I_i与I_e特性均是线性的。对x射线光电流和阳极表面脱附离子的影响也作了量测,相应的压强下限约为3×10~(-11)托。由于阳极环尺寸小,电压低,这个值主要为x射线光电流的本底值。由于发射电流很小,便于采用冷阴极发射,从而减少了灯丝的吸放气效应。

The process of sodium ion passivation and Na~+ trap energy distribution in a MOS structure with HCl oxide are studied by means of Q-t,TVS, C-V and TSICmethods.The HCl oxides were thermally grown in an oxygen atmosphere containing0-10% very dry HCl gas at 1160℃ for 35 minutes.It is found that passivation effi-ciencies of these MOS structures with 4% HCl oxides generally exceed 99.5% to99.99% at the Na~+ contamination range of 10~(11) to 2.5×10~(15) ions/cm2.In the siliconside of HCl MOS structure,there are two...

The process of sodium ion passivation and Na~+ trap energy distribution in a MOS structure with HCl oxide are studied by means of Q-t,TVS, C-V and TSICmethods.The HCl oxides were thermally grown in an oxygen atmosphere containing0-10% very dry HCl gas at 1160℃ for 35 minutes.It is found that passivation effi-ciencies of these MOS structures with 4% HCl oxides generally exceed 99.5% to99.99% at the Na~+ contamination range of 10~(11) to 2.5×10~(15) ions/cm2.In the siliconside of HCl MOS structure,there are two kinds of traps,the charged state and theneutral state.The trap energy of the neutral state is dependent on the HCl concen-tration in oxygen atmosphere and on the temperature and field strength of BTS treat-ments.

用Q-t,TVS,C-V和TSIC方法研究了HCl氧化物MOS结构中的钠离子纯化和陷阱能量分布.在含有很干燥的 0-10% HCl的氧气氛中进行硅的热氧化,温度 1160℃,时间35分钟,然后制成MOS结构.当钠的沾污范围为10~(11)到2.5 ×10~(15)离子/厘米~2时,大于4%的HCl氧化物的钝化效率为 99.5%到 99.99%。在 HCl MOS结构的硅边有两种陷阱态:带电态和中性态,中性态的陷阱能量依赖于HCl的浓度和BTS处理时的温度和电场强度.

 
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