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doping
相关语句
  掺杂
    Electrochemical and Structural Study on Spinel LiMn_2O_4 Cathode Materials by Doping and Surface Modification
    掺杂和表面改性尖晶石LiMn_2O_4用作锂离子电池正极材料的研究
短句来源
    Effect of Ba and Mg doping on the Superconductivity of the Bi(Pb)-Sr-Ca-Cu-O System
    Ba和Mg掺杂对Bi(Pb)-Sr-Ca-Cu-O超导性能的影响
短句来源
    EFFECT OF DOPING ON MICROSTRUCTURE AND ELECTRIC PROPERTIES OF LOW VOLTAGE ZnO VARISTOR
    掺杂对低压ZnO压敏陶瓷材料显微结构及电性能的影响
短句来源
    Photoelectric Property for Zinc Phthalocyanine of Doping C_(60) on InP Electrode
    锌酞菁掺杂C_(60)在InP电极上的光电性能研究
短句来源
    Study on a conductive doping polypyrrole
    一种具有导电性能的掺杂聚吡咯研究
短句来源
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  “doping”译为未确定词的双语例句
    EFFECT OF Ag_2O DOPING ON THE MICROSTRUCTURE AND SUPERCONDUCTIVITY OF YBa_2Cu_3O_(7-δ) BULK MATERIAL II.MICROSTURCTURE AND MECHANISM
    添加Ag_2O对YBa_2Cu_3O_(7-δ)体材料显微结构与超导电性的影响 (Ⅱ)显微结构分析与Ag的作用机理探讨
短句来源
    Influences of Doping the Superconductor TlCaSr_2Cu_2O_x with Elements Pb, Sn, Al, K, Cr, Y, V, Ni, Fe on T_c
    在超导体TlCaSr_2Cu_2O_x中掺入Pb、Sn、Al、K、Cr、Y、V、Ni、Fe对T_c的影响
短句来源
    THE EFFECT OF DOPING Sb 2O 3 IN HIGH d 33 ·g 33 PZT PIEZOELECTRIC CERAMICS
    高d_(33)·g_(33)值PZT压电陶瓷材料中Sb_2O_3掺杂的作用
短句来源
    The capacity retention of materials modified by doping Th is 119.9 mAh/g at 0.2 C,more than 98% of the first discharge specific capacity after 20 cycles,and 118.3 mAh/g at 1 C,more than 97% of the first discharge specific capacity after the same cycles.
    在0.2C及1C放电速率下,首次放电比容量分别是119.9mAh/g和118.3mAh/g,循环20次后,容量保持率分别在98%和97%以上。
短句来源
    The grains size of the TiO2 sample is about 15 μm, solid solubility of donor doping Nb5+ solute in TiO2 grains of 1.49 %, B of 0.28 eV, xD of 48 nm, V1mA of 5.25 V/mm, α of 4.2 and εr of 1.1×104.
    B为0.28eV,势垒宽度xD为48nm; 压敏电压V1mA为5.25V/mm,非线性系数α为4.2,εr为1.1×104。
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  doping
The influence of doping amount of Fe3+ (ω: 0.00%-3.00%) on photocatalytic activities of TiO2 was investigated.
      
Doping Fe3+ can control the conversion of TiO2 from anatase to rutile.
      
The doping amount of Fe3+ remarkably affects the activity of the catalyst, and the optimum efficiency occurs at about the doping amount of 0.3%.
      
The appropriate doping of Fe3+ can markedly increase the catalytic activity of TiO2 under visible light irradiation.
      
Ultra-shallow Si p+n junctions formed by plasma doping are characterized by electrochemical capacitance-voltage (ECV).
      
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This paper analyses the blocking voltage, forward voltage drop, photoresist mask design and gate-triggering and dynamic characteristics of high-power thyristors. In the design of blocking voltage capability, the simplified formulas for the base region thickness and for the choice of doping concentrations are proposed. In order to increase the minority carrier lifetime, the mechanism of phosphorus gettering is studied. In addition, the equivalent circuit of amplifying-gate thyristors and factors which influence...

This paper analyses the blocking voltage, forward voltage drop, photoresist mask design and gate-triggering and dynamic characteristics of high-power thyristors. In the design of blocking voltage capability, the simplified formulas for the base region thickness and for the choice of doping concentrations are proposed. In order to increase the minority carrier lifetime, the mechanism of phosphorus gettering is studied. In addition, the equivalent circuit of amplifying-gate thyristors and factors which influence the switching behavior are discussed also.

本文对大功率可控硅的阻断电压问题、正向压降问题、光刻掩模板的设计问题、控制极特性问题以及动特性问题进行了分析。提出了阻断电压设计中关于基区宽度和基区杂质浓度选择的简化公式。研究了为提高基区少子寿命而进行磷吸收的机理。分析了具有放大控制极的可控硅的控制极等值电路,和影响控制极特性的一些因素。

This paper presents a series of experimental results and discussions on the material behaviors, technical parameters and ceramic-disc characteristics of the piezoelectric transformer. Based on the analysis of scanning electronic mi- croscope and X-ray diffraction, the relations between physical properties and micro-structures of piezoelectric ceramics and the respective doping mechanism are studied, and as a consequence, several points of view are thus raised. Finally, the circuit for the piezoelectric...

This paper presents a series of experimental results and discussions on the material behaviors, technical parameters and ceramic-disc characteristics of the piezoelectric transformer. Based on the analysis of scanning electronic mi- croscope and X-ray diffraction, the relations between physical properties and micro-structures of piezoelectric ceramics and the respective doping mechanism are studied, and as a consequence, several points of view are thus raised. Finally, the circuit for the piezoelectric ceramic. transformers and their application are introduced briefly

本文对压电陶瓷变压器的材料性能,工艺参数和瓷片的特性进行了一系列试验与讨论。通过 电子扫描显微镜和X射线的分析,对压电陶瓷的物理性能和微观结构的关系,掺杂改性的机理提 出了一些看法。最后,对压电陶瓷变压器的电路和应用作了简要介绍。

There is a drift field at the back contact of BSF cell created by heavy doping. For example, n+/p/p+, p/p+ junction is also a so-called "high-low" junction which behaves as a membrane permitting the passage of majors and reflecting the minors. Because of that, the boundary conditions of continuity equation are different from those of conventional cells. The junction and reverse currents are then deduced. The conclusions are as following: the junctien current of BSF cell is always greater than that of conventional...

There is a drift field at the back contact of BSF cell created by heavy doping. For example, n+/p/p+, p/p+ junction is also a so-called "high-low" junction which behaves as a membrane permitting the passage of majors and reflecting the minors. Because of that, the boundary conditions of continuity equation are different from those of conventional cells. The junction and reverse currents are then deduced. The conclusions are as following: the junctien current of BSF cell is always greater than that of conventional cells if they have the same thickness and minor diffusion length, the junction current will decrease while the reverse increase with the increasement of thickness if the minor diffusion length is decided; the junction current will increase while the reverse are decrease with the increasement of minor diffusion length if the minor diffusion length always equal to the thickness.Thus the decision of BSF cell thickness must make it equal to the minor diffusion length.

背电场电池在背接触处以高掺杂造成一漂移场。以n~+/p/p~+为例,p/p~+即所谓“高低结”,它是一种半透膜,允许多子通过而拒斥少子。它的存在使得p区的连续方程边界条件不同于普通电池。本文根据这些边界条件求得背电场电池的结电流和反向电流,并得到如下结论:背电场电池之结电流总大于普通电池(电池厚度、少子扩散长度等参数一样);少子扩散长度一定时,背电场电池厚度的增加使结电流减小,反向电流增加,从而使开路电压降低;如背电场电池少子扩散长度随电池厚度增加而增加,则结电流增大而反向电流降低。 背电场电池厚度的选择准则是厚度与少子扩散长度相等。

 
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