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dopant content
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  掺杂量
     When ratio of water to alcohol was 1: 0, hydrotherm treatment was kept at 200℃ for 48 h, dopant content was 1%, the best result of photocatalysis degradation is received. The photoactivity degradation efficiency of La-doped TiO_2 was higher than pure TiO_2 by 24%.
     在水醇比为1:0,水热温度为200℃,时间为48h,掺杂量为1%条件下,制备的La-doped TiO_2光催化活性最好,比纯TiO_2的光催化活性提高了24%。
短句来源
     A series of investigation were done, which include the relations of the dopant content of Al TiC 0.47 B, the ratio of Al, TiC 0.47 in binder and the sintering temperature with the compressing strength, the abrasion resistance and the cutting property of PCBN.
     研究了 Al- Ti C0 .47- B系结合剂掺杂合成的 PCBN的抗压强度、磨耗比、连续切削性能与结合剂的掺杂量 ,Al、Ti C0 .47各自在结合剂中的含量及合成温度诸因素的关系。
短句来源
     The effects of heat-treatment atmosphere, temperature and Sn dopant content on the electrical and optical properties of In_2O_3 thin films were investigated.
     进一步研究了热处理气氛、温度、Sn掺杂量对In2O3薄膜电学及光学性能的影响。
短句来源
     Cu~(2+)/TiO_2 has better antibacterial quality when the dopant content is more than 1.6%. Its antibacterial mechanism is photocatalysis in proper doping and contacting mechanism in too much dopant.
     Cu~(2+)/TiO_2复合材料Cu~(2+)掺杂量1.6%以上才具有较好的抗菌性能,适量掺杂时以催化机理杀菌,过量掺杂时以溶出机理杀菌。
短句来源
     The properties (bending strength,abrasion resistance) ofSi-Ti-B doped diamond/cemented carbide composites depend on both the dia-mond particle size and the dopant content.
     Si-Ti-B 掺杂烧结金刚石/硬质合金复合体中金刚石层的抗弯强度和耐磨性取决于金刚石粒度和掺杂量两种因素。
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  氧化硼含量
     With the increasing of dopant content, grains grew up uniformly, and dielectric constant and loss increased.
     随着氧化硼含量的增加,晶粒尺寸均匀长大、介电常数和介电损耗都增加;
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  “dopant content”译为未确定词的双语例句
     (4) The dopant content x in the samples also remarkably influences the conduction properties, SrCe_(0.85)Er_(0.15)O_(3-α) has the highest ionic conductivity among the samples.
     (4)掺杂离子浓度x对样品的导电性质有着显著影响; 在该系列陶瓷样品中,SrCe_(0.85)Er_(0.15)O_(3-α)具有最高的离子电导率。
短句来源
     A maximum emissive efficiency of 3.14 cd/A was obtained by optimizing device structure and the dopant content.
     通过器件结构和浓度优化,器件的最大发光效率达3.14 cd/A,在较高的电流密度下,该器件的电致发光效率无明显衰减.
短句来源
     The lattice parameter ( a ) of the products decreased wit h in creasing the dopant amount of copper, 8.235×10 -10 m, 8 221×10 -1 0 m, and 8 218×10 -10 m for x =0, 0.03 and 0 16 respectively. Th e cycling stability of the products increased with the dopant content.
     尖晶石型的锂锰氧化物掺入铜后晶胞常数 (a)减小 ,掺铜量x =0 ,0 0 3,0 16的锂锰氧化物尖晶石晶胞常数依次为 8 2 35× 10 - 10 m ,8 2 2 1× 10 - 10 m ,8 2 18× 10 - 10 m .
短句来源
     Experimental results show that the best Nd dopant content of Nd_xCo_4Sb_(12) compounds is x=1.0 and Nd_(1.0)Co_4Sb_(12) compound has high thermoelectric properties with the highest ZT value 0.265 achieved at 400 ℃.
     实验结果表明 ,NdxCo4 Sb1 2 化合物中稀土Nd的最佳添加量为x =1.0。 Nd1 .0 Co4 Sb1 2 化合物具有较高的热电性能 ,其中在 40 0℃时具有最大ZT值 0 .2 65。
短句来源
     The Variation of the Dielectric Property of La-Doped BaTiO3 Ceramics with Dopant Content and Frequency
     La掺杂BaTiO_3陶瓷的介电性随掺La量及频率的变化
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  dopant content
We have studied phosphate crystals with low dopant content using X-ray photoelectron spectroscopy (XPS), X-ray fluorescence analysis (XFA), and electron paramagnetic resonance (EPR).
      
The IR spectra and magnetic susceptibility indicate the Nb-Nb (or Ta-Ta) bonds along c-axis in rutile by two Nb5 + (Ta5 +) ions located in sites adjacent along the c-axis appear with the dopant content.
      
When the dopant content is over certain molar percent, biphase reappears.
      
In most high-temperature superconductors, Tc(u), where u is the dopant content, is the same for Ni and Zn replacing cuprate-plane-Cu.
      
In the dopant content range of 0 to 10 mol%, 0.5 mol% Ga2O3 was the optimum doping level in promoting densification and grain growth of commercially available powders of Ce0.8Gd0.2O1.9.
      
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The bending strength and abrasion resistance of diamond layer of Si-Ti-B doped diamond/cemented carbide composites depend on both the diamond particle size and the dopant content. The relationships between the mechanical properties and the diamond particle size, dopant content are considered as the relationships between properties and the mean free path. A maxi-mun was found in the bending strength (or abrasion resistance) vs. mean free path plot. The bending strength decreases with decreasing mean...

The bending strength and abrasion resistance of diamond layer of Si-Ti-B doped diamond/cemented carbide composites depend on both the diamond particle size and the dopant content. The relationships between the mechanical properties and the diamond particle size, dopant content are considered as the relationships between properties and the mean free path. A maxi-mun was found in the bending strength (or abrasion resistance) vs. mean free path plot. The bending strength decreases with decreasing mean free path (binder layer thickness) to the direct contact of diamond particles. The bending strength decreases with increasing binder layer thickness is attributed to that the strength and hardness of binder (SiC, TiC) are lower than that of diamond. The heat-resistance of Si-Ti-B doped diamond is higher than that of cobalt bonded diamond.

金刚石粒度和掺杂量两因素对Si-Ti-B掺杂金刚石/硬质合金复合体的金刚石层的抗弯强度和耐磨性的综合影响,可以归结为平均自由程与机械性能的关系。在强度(或耐磨性)与平均自由程的关系曲线中,存在最大值。对于低掺杂量材料,强度随平均自由程(粘结相层厚度)的减少而降低。对于高掺杂量材料,强度随粘结相层厚度的增大而下降。Si-Ti-B掺杂烧结金刚石的耐热性高于钴粘结金刚石。

The properties (bending strength,abrasion resistance) ofSi-Ti-B doped diamond/cemented carbide composites depend on both the dia-mond particle size and the dopant content.In present work the relationshipsbetween the diamond particle size.dopant content are consi-dened as the relationships between the properties and the mean free path ofdiamond,since this mean free path depends on both the diamond particle size and the dopant content.A maximum was found in the bending strength (orabrasion resistance)...

The properties (bending strength,abrasion resistance) ofSi-Ti-B doped diamond/cemented carbide composites depend on both the dia-mond particle size and the dopant content.In present work the relationshipsbetween the diamond particle size.dopant content are consi-dened as the relationships between the properties and the mean free path ofdiamond,since this mean free path depends on both the diamond particle size and the dopant content.A maximum was found in the bending strength (orabrasion resistance) vs.mean free path plot.This maximum is explained byattributing the left portion of the curve where bending strength decreaseswith decreasing binder layer thickness to the direct contact of diamond parti-cles.The desending portion of the curve where bending strength decreaseswith increasing binder layer thickness is attributed to that the strength andhardness of binder (SIC、TiC、TiSi_2) are lower than that of diamond.

Si-Ti-B 掺杂烧结金刚石/硬质合金复合体中金刚石层的抗弯强度和耐磨性取决于金刚石粒度和掺杂量两种因素。本文将抗弯强度、耐磨性与金刚石粒度、掺杂量的关系归结为性能与平均自由路程的关系。在性能与平均自由程的关系曲线中存在性能最佳值。在曲线的左支,抗弯强度(或耐磨性)随平均自由程(粘结相层厚度)的减小而降低。这是由于存在金刚石直接接触的弱区而造成的。在曲线的右支,抗弯强度随粘结相层厚度增大而降低,强度和硬度都低于金刚石的粘结相(SiC、TiC、TiSi_2),降低了烧结金刚石的整体强度。只有当粘结相层厚度适中时,才能发挥出金刚石固有的良好强度和耐磨性。

Dependence of Nd 2O 3,Nb 2O 5 and Sm 2O 3 dopant content in a reduction reoxidation type of BaTiO 3 semiconducting ceramic materials for capacitors on their properties has been researched, sintering technology has been optimized and obtained materials posses following properties:

通过实验研究了Nd2O3、Nb2O5、Sm2O3添加量对还原再氧化型BaTiO3半导体陶瓷电容器材料性能的影响,同时优化了烧结工艺,获得了C>0.5μF/cm2,tgδ<3.5×10-2,ρ>4×1011Ω·cm,|△C/C|(-25~+85℃)<+30-80%,Vb>420V的实用半导体陶瓷电容器材料

 
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