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device structure     
相关语句
  器件结构
     Double heterosturcture OLED (ITO/NPB/BAlq_3/Alq_3/Mg∶Ag) and traditional structure OLED (ITO/NPB/BAlq_3/Mg∶Ag) were prepared by vacuum evaporation, and the effect of device structure on the optical and electric performance of the OLED was studied.
     采用真空蒸镀法制备了ITO/NPB/BAlq3/Alq3/Mg∶Ag(双异质型)和ITO/NPB/BAlq3/Mg∶Ag(传统型)两种结构的蓝色有机电致发光器件(OLED),并研究了器件结构对OLED光电性能的具体影响。
短句来源
     Period Gradient Superlattice (AlAs)_(n_l)/(GaAs)_(m_l)——a Possible Optoelectronic Device Structure With Variable Energy Gap
     可调能隙的光电器件结构——(AlAs)_ (n_l)/(GaAs)_(m_l)渐变周期超晶格
短句来源
     The device structure of the polymer was ITO /PEDOT/PVK / P3FS/Ba /Al,The external quantum yield of the device reaches 1.99%.
     其薄膜PL最大发射峰在516nm,绝对PL效率为86%,EL峰在542nm,器件结构为ITO/PEDOT/PVK/P3FS/Ba/Al,其EL最大外量子效率达到1.99%。
     Four blue organic light emitting diodes(OLED) based on anthracene derivatives(ADN) doped with different dopants have been prepared. The device structure is CuPc(12 nm)/NPB(40 nm)/ADN∶Dopant(50 nm)/Alq(12 nm)/LiF(4 nm)/Al.
     以ADN为基质,分别以不同掺杂剂制备了四种蓝色有机发光器件,器件结构为:CuPc(12 nm)/NPB(40 nm)/AND∶Dopant(50 nm)/Alq(12 nm)/LiF(4 nm)/Al。
短句来源
     A Novel Double RESURF TG-LDMOS Device Structure
     新型双RESURF TG-LDMOS器件结构
短句来源
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  装置结构
     An Analysis on the Sizing Device Structure and Sizing Quality of Sucker S432 Sizing Machine
     祖克S432型浆纱机上浆装置结构及浆纱质量分析
短句来源
     The power supply device structure design for agnisting shoke of 30kV high voltage pulse
     抗30kV高压脉冲的电源装置结构设计
     Passive vibration control does not need external energy, whose device structure is simple, and easy to realize, but difficult to meet high demand to vibration environment, products and structure vibration control.
     振动被动控制不需要外界能源,装置结构简单,且易于实现,但难以满足人们对振动环境,产品与结构振动特性控制越来越高的要求。
短句来源
     Combining biological characteristic and mechanical characteristic of millet, basing on the principle in analyzing structure-technology of thresh device existing, and applying to relevant theories of the modern design method , theory of mechanics, design of machinery etc. , carry on grain thresh device structure scheme and complete machine overall calculation of parameter, in the other hand, by virtual design , threshing mechanism were carried on overall organization design, virtual design , virtual assembly and interference checking.
     结合谷子的生物学特性及机械特性,在分析现有脱粒装置的结构技术以及脱粒原理的基础上,应用现代设计方法、机械原理、机械设计等相关理论,进行谷子脱粒装置结构方案和整机总体参数的计算,并通过虚拟设计的手段,对谷子脱粒装置进行了总体机构设计、虚拟设计、虚拟装配和干涉检查。
短句来源
     Through a systematic research and experimental validation on the detonating method, the device structure, the recovered sphere and sample, we have successfully established a quasi-spherical converging shock wave loading and recovery device that can produce a pressure more than 300 GPa, with low cost and high reliability on sample recovery, and obtained some rule and knowledge on the factors that influence the converging of shock wave.
     通过对起爆方式、装置结构、回收球体及回收试样的系统性研究和试验验证,成功地研制出了能产生300GPa以上汇聚压力、成本低、试样回收可靠性高的准球面汇聚冲击波加载装置,并对该装置中影响压力汇聚的诸因素形成了一些规律性认识。 此外,本文还利用各种冲击波加载装置进行了一些材料的冲击合成研究。
短句来源
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  器件的结构
     The device structure was ITO/TPD/Tb(acac) 2(AA)phen/Al.
     器件的结构为ITO/TPD/Tb(acac) 2 (AA) phen/Al。
短句来源
     Based on this,we further introduced a PVK or NPB hole-transporting layer (HTL),to make trilayer devices ITO/HTL/ZnSe/Alq_3/Al to investigate the influence of ZnSe layer on the emission of the trilayer devices by varying the device structure.
     在此基础上进一步引入有机空穴传输层(HTL),通过改变器件的结构,讨论了ZnSe对有机-无机异质结器件ITO/HTL/ZnSe/Alq3/Al电致发光特性的影响.
短句来源
     This article introduces 0.8 μm PD SOI MOS device structure, kink effect, hot-carrier effect and self-heating effect, and gives their physics explanation briefly.
     本文重点介绍了0.8μm PD SOI MOS器件的结构、KINK效应、热载流子效应和自加热效应等,并对这些特性从物理机理上进行了简要的阐述。
短句来源
     c) After improving the ZnO SBD, including the device structure and fabrication technology, Au/ZnO/Al SBD was fabricated with an improved rectifying characteristic.
     c)在制作Pt/ZnO/Al SBD的基础上,对ZnO SBD原型器件的结构与工艺进行改进,研制性能更为优异的SBD。
短句来源
     This paper describes the device simulation,experiment and analysis on advanced small size Metal- Gate CMOS which channel length from 0.8μm to 2.0μm,through process simulation and real wafers pro- cessing integration base on the TCAD software TSUPREM-4 and MEDICI. And it presents the final feasibility process and improved measurement after confirming the device structure and process parameter.
     利用校准之后工艺模拟软件TSUPREM-4和器件模拟软件MEDICI,采用工艺模拟与实际工艺流片相结合的方法对沟道尺寸为0.8μm-2μm之间的金属铝栅CMOS进行器件模拟、试验及分析,提出了相应的工艺及改进措施,确定了器件的结构、工艺等参数,提出了一个可行的工艺流程。
短句来源
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  结构器件
     In addition the important technologies of thin gate electric (SiO2 ), shallow-junction and shallow-junction metallization relative to PMODMOS device structure are presented.
     介绍了与GeSi-PMODMOS结构器件相关的超薄栅介质层(PESiO2,LPSiO2)、超浅结工艺和超浅结金属化等重要工艺技术。
短句来源
     Probability of upset depending on LET for the specific device structure is calculated for LET of different particles.
     通过输入不同粒子的线性能量传输值 ,得到了某一结构器件的翻转概率与线性能量传输值的关系曲线 .
短句来源
     Collective charge depending on LET for specific device structure is calculated for different ions. LET and critical charge are provided.
     给出了收集电荷随LET值的变化曲线并给出了某一结构器件的临界电荷;
短句来源

 

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  device structure
Lepselter and coworkers proposed a method of fabricating a new semiconductor device structure and its application to high-frequency silicon switching transistors and ultra-high-speed integrated circuits.
      
The basic device structure is an MBE-grown p-on-n heterojunction device.
      
Thin films of many dielectric materials have been used in the past for fabrication of solar cells and as a part of their device structure.
      
Performance characteristics of the thermoelectric (TE) cooled SWIR FPAs with 320 × 256 format, as well as NIR FPAs with 640×512 format based on the PI3H device structure are also discussed.
      
The PI3H device structure is pursued in order to verify whether it can encompass both the superb multilayer characteristics of heterojunction detectors as well as the planar integrity of ion-implanted devices.
      
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A high speed ECL 256 word by 1 bit RAM has been developed.The typicaladdress access time and read/write cycle time are 12 and 22ns,respectively,withthe power dissipation of 500mW.The dependence of electrical performance on thetemperature and power supply voltage is given.The devices can operate over thewide range of T_a=-55-+150℃ and V——(EE)=-3.5--7.0 V. The main characteristics of the circuits and mask design as well as the fabri-cation technology and device structure are mentioned in this paper.

高速 ECL 256字×1位随机存储器是在改进设计以及采用漂发射区、双层金属布线等工艺基础上得到的.地址取数时间典型值为12毫微秒,读写周期为22 毫微秒,功耗500毫瓦,可靠性高、这个器件能在环境温度-55-+150℃以及电源电压-3.5—-7.0伏范围内正常工作. 本文介绍了在线路和版图设计以及制造工艺方面的特点.

A new device structure, colled "the quasi-planar structure with the SiO2 isolation" for fabricating silicon vertical Chanael power junction-field effect transistor is presented. It is owing to this new structure that the frequency characteristic of devices has been improved remarkably, having a power output of 10 W at 800MHz and 8 W at 1000 MHz, respectively, with the associated power gain of more than 7dB;the devices are applicable to P-L band.

由于采用了“二氧化硅隔离准平面结构”制作硅结型垂直沟道功率场效应晶体管,使器件频率特性有了明显提高,分别在800MHz和1000MHz下得到了10W与8W的输出功率,其功率增益大于7分贝.这种器件可应用在P~L频段.本文从器件的等效电路出发,提出了这种高频功率器件在作结构设计时应遵循的基本原则;简略地介绍了“二氧化硅隔离准平面结构”的特点;着重指出了研制中应注意的问题;最后,简述了影响器件直流参数的有关因素.

According to the theory of impact avalanche transit time devices and p-n junctions,qu-antitative design processes of the device structures and operating parameters of J-bandsi p~+ pnn~+ type DDR IMPATT devices are discussed in this paper. Specifically, thesecond approximate analytic solution of the avalanche breakdown equation is given. Atheoretical efficiency of 26 percent is obtained. Fabrication procedure is described whichemploys only ordinary technologies. Experimental results with an...

According to the theory of impact avalanche transit time devices and p-n junctions,qu-antitative design processes of the device structures and operating parameters of J-bandsi p~+ pnn~+ type DDR IMPATT devices are discussed in this paper. Specifically, thesecond approximate analytic solution of the avalanche breakdown equation is given. Atheoretical efficiency of 26 percent is obtained. Fabrication procedure is described whichemploys only ordinary technologies. Experimental results with an output power of 2.7wand an efficiency of 10.5%,togather with high quality and good repeatability have beenobtained. Some problems about the theory and experiments are analysed and discussed.

本文根据雪崩渡越时间器件理论和p-n结理论,论述了J波段Si p~+pnn~+型DDR IMPATT器体结构、工作参数的定量设计过程,其中特别给出了雪崩击穿方程的二级近似解析解。导出了器件26%的理论效率。概述了该器件采用常规工艺的制造流程。已经取得了2.7W输出功率、10.5%频率、成品率高、重复性好的结果,并就有关的理论和实验问题进行了分析讨论。

 
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