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ecr plasma     
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  ecr等离子体
     Investigation of GaN Growth Directly on Si (001) by ECR Plasma Enhanced MOCVD
     GaN在Si(001)上的ECR等离子体增强MOCVD直接生长研究(英文)
短句来源
     Microwave ECR Plasma Parameter Measurement and Analysis
     微波ECR等离子体参数测量及分析
短句来源
     Study of Microwave ECR Plasma Propagating Property
     微波ECR等离子体的传播特性研究
短句来源
     Study of TiN Thin Film by Microwave ECR Plasma Reaction Sputtering Deposition
     微波ECR等离子体溅射沉积TiN薄膜的研究
短句来源
     Microwave ECR plasma diagnosis in aPSII system with Langmuir probe
     PSII系统中微波ECR等离子体的朗缪尔探针诊断
短句来源
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  微波ecr等离子体
     Microwave ECR Plasma Parameter Measurement and Analysis
     微波ECR等离子体参数测量及分析
短句来源
     Study of Microwave ECR Plasma Propagating Property
     微波ECR等离子体的传播特性研究
短句来源
     Study of TiN Thin Film by Microwave ECR Plasma Reaction Sputtering Deposition
     微波ECR等离子体溅射沉积TiN薄膜的研究
短句来源
     Microwave ECR plasma diagnosis in aPSII system with Langmuir probe
     PSII系统中微波ECR等离子体的朗缪尔探针诊断
短句来源
     Study of ionization properties of microwave ECR plasma by emission spectroscopy
     用发射光谱方法研究微波ECR等离子体电离特性
短句来源
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  ecr氮等离子体
     And we adopt ECR nitrogen plasma to nitride sapphire substrate which was cleaned with ECR plasma of hydrogen added with nitrogen for 20min prior to the adoption,then we can observe clear RHEED stripes of AlN nucleation layer. Furthermore the crystal quality of GaN buffer layer is the best.
     而采用 ECR氮等离子体对经过氢氮混合等离子体清洗 2 0 min后的蓝宝石衬底进行氮化 ,能观测到最清晰的氮化铝成核层的 RHEED条纹 ,且生长的 Ga N缓冲层质量是最好的
短句来源
  ecr等离子体源
     ECR Plasma Sources for Ionosphere Environment Simulator
     用于电离层环境模拟器的ECR等离子体源
短句来源
     Fluorinated diamond-like carbon (FDLC) films were prepared by means of plasma source ion implantation (PSII) and micro-wave ECR plasma enhanced chemical vapor deposition (ECR-PECVD) with source gases of CHF3, CH4/CHF3 and C2H2/CHF3. FDLC films are compared with DLC film in construct and various properties. The paper discussed the influence of different technique parameters on FDLC films.
     本文尝试了以CHF_3、CH_4/CHF_3和C_2H_2/CHF_3为源气体,利用微波ECR等离子体源离子注入技术和等离子增强化学气相沉积技术来制备氟化类金刚石膜的方法,并对DLC薄膜和FDLC薄膜的结构和性能进行了分析和比较。
短句来源
     Twinned microwave ECR plasma source enhanced magnetron sputtering
     双放电腔微波-ECR等离子体源增强磁控溅射沉积技术
短句来源
     Preparation and characterization of DLC films by microwave ECR plasma source enhanced unbalance magnetron sputtering
     微波ECR等离子体源增强非平衡磁控溅射DLC膜的制备与表征
短句来源
     In this study,the twinned microwave ECR plasma source enhanced ion implantation system was used to prepared graded diamond-like carbon(DLC) film through hybrid physical vapor deposition(PVD) and plasma enhanced chemical vapor deposition(PECVD) methods. Graded films of Si/(Si/α-C∶H)/DLC films were investigated. Raman spectra and TEM confirmed the diamond-like characteristics of as-received graded DLC films.
     实验利用双放电腔微波-ECR等离子体源设备,采用复合PVD(physical vapor deposition)和PECVD(plasma enhanced chemical vapor deposition)的方法,先后在NiTi基体上沉积Si和Si/α-C∶H过渡层,然后制备类金刚石薄膜。
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      ecr plasma
    Research performed with ECR plasma processing on HgCdTe shows that reducing the pressure can greatly reduce hydrogen ionization.
          
    However, after ECR plasma etching into the Hg1-xCdxTe film, the measured x value is much closer to that of the bulk.
          
    It has been observed in semiconductor processing that the etch rates for materials subjected to an electron-cyclotron resonance (ECR) plasma change with the total sample area.
          
    To demonstrate pattern transfer, underlying CdTe films were etched (after development of the resist) in an electron cyclotron resonance (ECR) plasma, where etch selectivities of approximately 8:1 have been achieved.
          
    Values of the aspect ratio for trenches etched into HgCdTe by an electron cyclotron resonance (ECR) plasma containing hydrogen and argon are limited by the phenomenon of etch lag.
          
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