助手标题  
全文文献 工具书 数字 学术定义 翻译助手 学术趋势 更多
查询帮助
意见反馈
   thin film 的翻译结果: 查询用时:0.202秒
图标索引 在分类学科中查询
所有学科
工业通用技术及设备
物理学
无线电电子学
材料科学
化学
电力工业
无机化工
自动化技术
金属学及金属工艺
更多类别查询

图标索引 历史查询
 

thin film
    很抱歉,暂未找到该词条的译词。
相关语句
  “thin film”译为未确定词的双语例句
     Study on Sol-gel Process for Thin Film Synthesis and Oxygen-sensing Properties of Perovskite-like Type Complex Oxide La_2NiO_4
     La_2NiO_4系类钙钛矿薄膜的溶胶-凝胶法制备及氧敏特性的研究
短句来源
     Preparation and Characterization of Nano-SiO_2/EP Coating Used on Thin Film Resistors
     薄膜电阻器用纳米SiO_2/环氧树脂复合涂料的制备与表征
短句来源
     Amplifier and Driver Circuits for Thin Film Memories with 15 Nanoseconds Read Cycle Time
     读周期为15毫微秒的磁膜存储器的放大器和驱动电路
短句来源
     Protective film in laser thin film
     用于激光薄膜的保护膜
短句来源
     THE DEVELOPING PICTURE OF LARGE SCALE LOW COST Cu_2S/CdS THIN FILM SOLAR CELL PREPARED BY SOLUTION SPRAYING METHOD
     用喷涂技术制备低成本大面积的Cu_2S/CdS太阳电池的进展及前景
短句来源
更多       
  相似匹配句对
     Physcis of the Thin Film
     《薄膜物理学》
短句来源
     Thin Film Electroluminescence
     薄膜电致发光技术
短句来源
     THIN
     薄
短句来源
查询“thin film”译词为用户自定义的双语例句

    我想查看译文中含有:的双语例句
例句
为了更好的帮助您理解掌握查询词或其译词在地道英语中的实际用法,我们为您准备了出自英文原文的大量英语例句,供您参考。
  thin film
Preparation of bismuth telluride thin film by electrochemical atomic layer epitaxy (ECALE)
      
A thin film of bismuth telluride was formed by alternately depositing Te and Bi via an automated flow deposition system.
      
Theoretical analysis and experimental study on the influence of electric double layer on thin film lubrication
      
A new mathematical model for thin film lubrication is established by taking into account the effect of an electric double layer.
      
With a composite block and a rotating disk, influence of electric double layer on thin film lubrication is studied.
      
更多          


In the research work of silicon devices, it is often needed to measure and control accurately the thicknesses of SiO2 thin films. Although it is well known that SiO2 thin films exhibit vivid colours under sunlight due to interference effects, yet there is no simple relationship between the thickness of the thin film and the wave length of the light corresponding to the observed colour. Described in this paper is a method for the measurement of the thicknesses of thermally grown SiO2 thin...

In the research work of silicon devices, it is often needed to measure and control accurately the thicknesses of SiO2 thin films. Although it is well known that SiO2 thin films exhibit vivid colours under sunlight due to interference effects, yet there is no simple relationship between the thickness of the thin film and the wave length of the light corresponding to the observed colour. Described in this paper is a method for the measurement of the thicknesses of thermally grown SiO2 thin films. From the measured data, we have calculated the index of reflection of the SiO2 thin film as well as the phase shift difference between the SiO2-Si interface and the Si-air interface.

在半导体硅器件的研究工作中,需要准确地测量和控制SiO_2薄膜的厚度。由于干涉原理,SiO_2薄膜在白光照射下呈现颜色。但薄膜厚度与颜色相应的单色光的波长并不成简单的函数关系。本文叙述了用干涉显微镜测量热生长SiO_2薄膜厚度的方法。由测量结果得到SiO_2薄膜的折射率以及SiO_2和硅界面及空气和硅界面反射相移之差。并且测量了一组标准样品的薄膜厚度,列出了薄膜厚度与干涉颜色的对应关系。所得结果与从Rollet数据所推算的结果大致符合。样品厚度还包括了Rollet数据中所未包括的范围(3300—4200)。

The theory developed in reference [1] has been extended to thicker films. The compensation equation and current equation are derived for superconducting films in a magnetic field, on the basis of a model which assumes the energy-gap function to be constant over the whole film and by means of Schrieffer's technique. The equations obtained are applied to discuss the influence of an external magnetic field on the superconducting properties of a metallic film and its transition changes. The formulas for determining...

The theory developed in reference [1] has been extended to thicker films. The compensation equation and current equation are derived for superconducting films in a magnetic field, on the basis of a model which assumes the energy-gap function to be constant over the whole film and by means of Schrieffer's technique. The equations obtained are applied to discuss the influence of an external magnetic field on the superconducting properties of a metallic film and its transition changes. The formulas for determining energy-gap, magnetic moment, and critical fields Hc, HC1 and Hc2 which correspond respectively to equilibrium transition and to boundaries of supercooled and superheated region, are given. All the expressions have been reduced to the well-known results of the Ginzburg-Landau theory in the local limit and to those of reference [1] in the thin film limit. Non-local effects in the general case have been discussed in detail.

本文将文献的理论推广到较厚的超导膜。首先采用能隙是常数的模型,借助于Schrief-fer方法,导出磁场中超导膜的补偿方程和电流方程。利用所得的方程,研究了均匀外磁场对金属膜超导性质的影响,讨论了超导膜在磁场中的相变,给出了确定超导膜的能隙、磁矩、平衡临界场Hc,以及分别相应于过冷和过热区域边界的临界场Hc_1和Hc_2的一般公式。所有这些表达式,在局域极限下,化为理论的相应结果;在薄膜情形下,回到文献的结果,文中对一般情形下的非局域效应作了具体的讨论。

In this work we report experimental studies of the critical magnetic field for indium films of different thicknesses alloyed with 2 at.% and 3 at.% of tin, thus furnishing, for the first time, experimental data of Hc ~ d for the case of finite electronic mean free path. From these data, it is concluded that the critical magnetic field of thin films can only be discussed in the light of the non-local, nonlinear theories, and that in the thin film limit, He∞ d-3/2 for both pure and alloyed films....

In this work we report experimental studies of the critical magnetic field for indium films of different thicknesses alloyed with 2 at.% and 3 at.% of tin, thus furnishing, for the first time, experimental data of Hc ~ d for the case of finite electronic mean free path. From these data, it is concluded that the critical magnetic field of thin films can only be discussed in the light of the non-local, nonlinear theories, and that in the thin film limit, He∞ d-3/2 for both pure and alloyed films. The local theories of london and of Гинзбург-ланлау, and the non-local, linear theory of Ittner, are inapplicable. The erroneous conclusion of Hc∞ d-1 made by certain outhors, is due to their incorrect analyses of their experimental data.

本文对In+2%Sn,In+3%Sn的不同厚度合金膜的临界场Hc进行了研究,从实验上第一次提供了电子平均自由程l≠∞时的Hc~d的数据。这些实验结果表明,关于超导膜临界场问题只能用非线性非定域理论描述,在薄膜极限下,不论纯膜或合金膜,Hc∝d~(-3/2);定域的London,Г-Л理论和线性非定域的Ittner理论皆不适用。一部分文献中给出Hc∝d~(-1)的结论,是由于那些作者分析实验结果的方法不恰当所致。

 
<< 更多相关文摘    
图标索引 相关查询

 


 
CNKI小工具
在英文学术搜索中查有关thin film的内容
在知识搜索中查有关thin film的内容
在数字搜索中查有关thin film的内容
在概念知识元中查有关thin film的内容
在学术趋势中查有关thin film的内容
 
 

CNKI主页设CNKI翻译助手为主页 | 收藏CNKI翻译助手 | 广告服务 | 英文学术搜索
版权图标  2008 CNKI-中国知网
京ICP证040431号 互联网出版许可证 新出网证(京)字008号
北京市公安局海淀分局 备案号:110 1081725
版权图标 2008中国知网(cnki) 中国学术期刊(光盘版)电子杂志社