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silicon     
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     Fabrication of SOI Material Using Epitaxial Layer Transfer of Porous Silicon and Luminescence Study of Modified Porous Silicon
     多孔外延层转移SOI新材料制备与改性多孔发光性能的研究
短句来源
     Ecophysiological Adaptation Characteristic of Halophytes in Xingjiang Province and the Mechanisms of Silicon to Salt Resistance
     新疆盐生植物生理生态适应性及提高植物抗盐作用机制的研究
短句来源
     Dynamic Analysis and Mathematical Model of Silicon Micromechanical Vibration Gyroscope
     微型陀螺仪的力学分析和数学模型
短句来源
     Study on Engineering Properties and Elastic-plasticity Constitutive Model of Soils Stabilized with Cement and Nanometer Silicon
     纳米水泥土工程特性及本构模型研究
短句来源
     Study on Evaluation Method of Silicon Supplying Capacity in Paddy Soil and Fertilizer Response of Silicon on Rice
     水稻土供能力评价方法及水稻素肥料效应的研究
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  硅的
     THE DISTRIBUTION AND EFFECT OF SILICON IN Al-Si COATINGS——ON INVESTIGATION OF Si-CONTAINING BARRIER
     Al-Si涂层中硅的分布及作用—含Si隔层的研究
短句来源
     Electronic Structure of Amorphous Silicon——Model Calculation
     非晶态材料硅的电子态密度的理论计算
短句来源
     High-speed Analysis of Silicon in High-alloy Steels
     高合金钢中硅的高速分析
短句来源
     Synthesis and Purification of silicon Tetrabromide
     四溴化硅的合成与提纯
短句来源
     Srudy of the Localized Electron Structure of Semiconductors with a X_α-Overlapping Sphere MethodIl.Orbiral Levels of Perfect Diamond and Silicon
     利用X_α—重叠球方法研究半导体的局域电子结构——Ⅱ.共价半导体金刚石和硅的轨道能级
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  硅片
     Study on GB/T 156151995 Test Method for Flexure Strength of Silicon Wafer
     GB/T 15615-1995硅片抗弯强度测试方法研究
短句来源
     Experimental and theoretical study on laser cleaning Al_2O_3 particle on silicon wafer surface
     激光清洗硅片表面Al_2O_3颗粒的试验和理论分析
短句来源
     Study on the Property of Implanted Silicon Wafer after CW CO_2 Laser Annealing
     CW CO_2激光退火后离子注入硅片的性质研究
短句来源
     PT transition layer pro-motes the crystallization of[(Pb,La)(Zr,Ti)O_3]films on platinized silicon.
     PT过渡层促进[(Pb,La)(Zr,Ti)O_3]薄膜在镀铂硅片上的晶化。
短句来源
     Design of TAW-3 Automatic Washing Machine for Silicon Wafer
     TAW-3硅片自动清洗装置的设计
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  单晶硅
     Under 100mW/cm2 we have fabricated Cr-MIS solar cell on p-type single silicon which has yielded Voc up to 0.545V,Jsc up to 31.5 mA/cm2,FF up to 0.67,and η up to 11.5% (based on active area of 1.3 cm2).
     在100mW/cm~2的光强下,有效面积为1.3cm~2的Cr-MIS单晶硅电池,V_(oc)、J_(sc)、FF和η分别为0.545V、31.5mA/cm~2、67%和11.5%。
短句来源
     Calculation of Electronic Structures of Er Point Defects and Er O Complex Defects in Crystal Silicon with EHMO
     单晶硅中铒点缺陷及Er-O复合缺陷电子结构的EHMO计算
短句来源
     On the same conditions Cr-MIS solar cell on waste p-type single silicon is fabricated which has yielded Voc up to 0.54V,Jsc up to 28.3 mA/cm2,FF up to 0.64,and η up to 9.8% (based on active area of 3.14 cm2).
     在同样光照条件下,有效面积为3.14cm~2的Cr-MIS废次单晶硅电池,V_(oc)、J_(sc)、FF和η分别为0.541V、28.3mA/cm~2、64%和9.8%。
短句来源
     To the range 2.5—50μ. of wavelength the absorption coefficient α of monocrystal Silicon are calculated.
     计算出波长在2.5-50μ范围内单晶硅的吸收系数α。
短句来源
     Surface Appearance Study of Nd:YAG Solid Laser Milling on Single Crystal Silicon
     Nd:YAG固体激光铣削单晶硅表面形貌研究
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      silicon
    Oxidized porous silicon with the large surface area as the solid phase matrix for absorption of DNA from a biological sample can greatly improve the DNA yield.
          
    The sensitive unit of the accelerometer is the metal-oxide semiconductor (MOS) ROs located on silicon beams.
          
    The fabrication of the chip, including a heavily phosphorus-doped poly-silicon micro-electrode array and a thermally grown SiO2 dielectric layer, was exploited to improve the chip stability and decrease the actuation voltage.
          
    Effect of the silicon substrate structure on chip spiral inductor
          
    In this paper, we discuss the effects of a nanometer silicon dioxide (nano-SiO2) coupling agent, dispersal methods and the amount of nano-SiO2/urea formaldehyde resin.
          
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    An electrophotometric method has been worked out for the determination of magnesium in cast iron using titan yellow as indicator.Briefly,the method consists of dissolving the sample in dilute sulphuric acid,separating iron and other metals such as copper and nickel by electrolysis with mercury cathode and precipitating manganese from ammoniacal solution with ammonium persulfate.Ammonimn salt,silica and traces of aluminaare thenremoved. Finally,the prepared titan yellow reagent is added to the solutionand the...

    An electrophotometric method has been worked out for the determination of magnesium in cast iron using titan yellow as indicator.Briefly,the method consists of dissolving the sample in dilute sulphuric acid,separating iron and other metals such as copper and nickel by electrolysis with mercury cathode and precipitating manganese from ammoniacal solution with ammonium persulfate.Ammonimn salt,silica and traces of aluminaare thenremoved. Finally,the prepared titan yellow reagent is added to the solutionand the magnesium content determined from the electrophotometric reading.The time required for each determination is approximately 5 hours. The effect of interfering elements which are likely present in cast iron such as manganese, silicon,phosphorus, aluminum, copper, nickel and vanadium as well as ammonium ion and alkali and alkaline earth metals has been studied and discussed.It has been shown that manganese, silicon, aluminum,copper,nickel,iron and ammonium ions can be removed down to such low values as to cause no significant interference.Phosphorus under 0.4% has no appreciable effect.Vanadium is not separated in the present method,but fortunately it is usually present in insignificant amounts in ordinary cast iron.The effect of calcium is compensated by the introduction of saturated calcium sulphate solution before the titan yellow addition. Potassium and sodium have no appreciable effect when present in small amounts. The results obtained by the present method for the determination of magnesium in 11 known samples are good,the average difference being 0.002% in a range of 0.000% to 0.140% Mg.The data obtained by the present method are also in good agreement with those obtained by gravimetric methods On seven nodular iron samples made by the Metallurgical Division of our Institute.A detailed procedure for the determination of magnesium in cast iron has been suggested and included in this paper.In view of its rapidity and fair accuracy,the new photometric method might prove useful for the purpose of control in a nodular iron foundry.

    本文报告将地丹黄比色法应用於测定铸铁中之镁的试验结果.如将铁、锰、铝、矽等干扰物质预先除去,则镁的测定并无困难.依照本文所擬的方法分析,所需时间约为五小时,较重量法迅速得多.

    The current methods for the preparation of ethyl orthosilicate do not give satisfactory results.It is found that the low yield is due to the use of excess alcohol,which,in presence of hydrogen chloride,produces water and causes the ethyl orthosilicate to undergo a hydrolytic polycondensation.The condensation products have been isolated and identified as 1,3-hexaethoxydisiloxane and 1,3,5- octaethoxytrisiloxane. An improved method,consisting of the addition of equivalent quantities of silicon tetrachloride...

    The current methods for the preparation of ethyl orthosilicate do not give satisfactory results.It is found that the low yield is due to the use of excess alcohol,which,in presence of hydrogen chloride,produces water and causes the ethyl orthosilicate to undergo a hydrolytic polycondensation.The condensation products have been isolated and identified as 1,3-hexaethoxydisiloxane and 1,3,5- octaethoxytrisiloxane. An improved method,consisting of the addition of equivalent quantities of silicon tetrachloride and anhydrous ethyl alcohol into ice-cold ethyl orthosilicate as diluent,is recommended.The reaction mixture gives 95% of theoretical yield of the ethyl orthosilicate.

    现行文献中所载原矽酸乙酯的制备法,其产率均不能使人满意。我们找出产率不高的主要原因是过量的醇和作用所发生的氯化氢生成了水,水引起了原矽酸乙酯的水解缩聚作用。这已经由实验证明。作用副产物亦经纯化鉴定,主要的是1,3-六乙氧基二矽氧烷和1,3,5-八乙氧基三矽氧烷。改进的制备法是将等作用量的四氯化矽和无水乙醇(克分子数比为1:4)同时滴入冷却的、受搅拌的原矽酸乙酯(作为稀释剂)中,经搅拌半小时,即徐徐加热以除去氯化氢,然后蒸馏。这样,原矽酸乙酯的产率达95%。这个方法并适用于连续操作。

    For the purpose of supplying useful information to manufacturing organizations, and of systematically examining the effects of temperature and time of annealing on the domestically produced low silicon steel electrical sheets, a series of experiments has been performed. The results show that the lowest obtainable values of core loss of samples box-annealed in its own atmosphere are approximately P_(10)=2.3 watt kg, P_(15) = 5.2 watt/kg, 30% lower than the permissible values set in ROCT 802-41 for э1A.

    为了提供生产上有用的数据,为了考察国产低矽钢片在不同温度不同时间的条件下退火以后的效果,我们进行了具有相当系统性的关于退火条件的实验。实验结果表明:在较850℃为低的温度退火不同时间或多次退火,可使铁心损失达到同一最低值;在高于950℃的温度退火以后,即令再度在较低温度退火,也不能达此最低值。此最低值约为:P_(10)=2.3瓦特/千克,P_(15)=5.2瓦特/千克,较ГOCT802-41中对Э1A规定的最高值低30%。

     
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