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devices
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  器件
    Study on the Characteristies and Radiation Response of SiC Material and Devices
    SiC材料和器件特性及其辐照效应的研究
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    Research of High Frequency and Microwave Bipolar Power Devices
    双极高频、微波功率器件的研究
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    Design and Fabrication of Organic Light-Emitting Devices
    有机电致发光器件设计与制作
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    Theoretical and Experiment Study on Magnetized Plasma-filled Relativistic Microwave Devices
    磁化等离子体填充相对论微波器件的理论和实验研究
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    Study on the Improvement of the Whole Performance of Power Devices
    提高功率器件整体性能的研究
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  器件的
    Research of High Frequency and Microwave Bipolar Power Devices
    双极高频、微波功率器件的研究
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    Theoretical and Experiment Study on Magnetized Plasma-filled Relativistic Microwave Devices
    磁化等离子体填充相对论微波器件的理论和实验研究
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    Study of Compact PLC Devices in SOI and Arrayed Waveguide Gratings
    SOI材料上紧凑结构波导器件及阵列波导光栅器件的研制
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    Study on White Organic Light-emitting Devices
    有机白色电致发光器件的研究
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    Theoretical and Experimental Studies about Novel Arrayed-waveguide Devices
    新型阵列波导器件的理论与实验研究
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  “devices”译为未确定词的双语例句
    Technology of Localized Lifetime Control in Conductivity Modulation Power Devices
    电导调制器件局域寿命控制技术
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    Percolation Methodology for the Modeling and Simulation of the Reliability Issues of Microelectronics Devices
    微电子器件可靠性建模与仿真的逾渗分析方法
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    The Development of the N-channel Silicon Gate MOS Devices
    硅栅N沟道MOS场效应晶体管的研制
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    STUDY OF THE RELATION BETWEEN ELECTROLUMINESCENT EFFICIENCY AND DISTRIBUTION OF ELECTRIC FIELD STRENGTH IN THE ZnS: Cu, Er, Cl DC THIN FILM EL DEVICES
    ZnS:Cu,Er,Cl薄膜直流电致发光效率与电场分布关系的研究
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    High performance photovoltaic infrared devices in Hg_(1-x)Cd_xTe on sapphire
    以兰宝石为衬底的Hg_(1-x)Cd_xTe高优质红外光伏探测器
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  devices
Therefore, this kind of polyurethane can be used for implanted medical devices with shape memory requirements.
      
Photovoltaic devices from CdSe nanocrystals and conjugated polymer composites
      
The preparation of CdSe nanospheres (ns-CdSe) and their application as electron acceptor in conjugated polymer photovoltaic devices are reported.
      
Photovoltaic devices were fabricated from the composites of ns-CdSe and poly[2-methoxy-5-(2'-ethylhexyloxy)-1,4-phenylenevinylene] (MEH-PPV) or poly(3-hexylthiophene) (P3HT).
      
The method can be used not only to calculate FSIQ in the complex power systems with simple or multiple faults, but also to analyze and evaluate the performance of the protective relays and automatic devices based on FSIQ.
      
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The advances of solid state negative-resistance devices, such as tunnel diodes, variable reactance semiconductor diodes used in parametric forms, lead to the interests of the study of periodically loaded travelling type distributed amplifiers. This paper gives a detailed analysis on the transmission characteristics of this type of microwave amplifier. The analysis includes the study of the phase equation, gain equation, the frequency-phase characteristics, the pass band vs stop band relationships and the...

The advances of solid state negative-resistance devices, such as tunnel diodes, variable reactance semiconductor diodes used in parametric forms, lead to the interests of the study of periodically loaded travelling type distributed amplifiers. This paper gives a detailed analysis on the transmission characteristics of this type of microwave amplifier. The analysis includes the study of the phase equation, gain equation, the frequency-phase characteristics, the pass band vs stop band relationships and the phase velocity and group velocity characteristics. A detailed analysis on the travelling wave type semiconductor diode parametric amplifier is also given. Important universal curves and design conditions are also included for ready references.

由于各种固体负阻器件的进展,例如隧道二极管,参量应用的变容二极管等,从而引起了对具有周期性负载行波式分布放大器的研究。 本文对这一类微波放大器的传输特性进行了详细分析,对其主要性能的分析包括:相位方程,增益方程,频率-相位关系,通带及阻带,相速及群速等等。文中给出了变容二极管行波式参量放大器的分析;还给出了重要的通用曲线及设计要点以供参考。

To avoid employing massive magnetic focussing equipments in klystrons (e.g., three-covity amplifiers ),a centrifugol electrostatic focussing device is herein proposed. The working principle of this new type klystrons has been analysed;the bunching pa- rameters of the two-and three-covity klystrons have been calculated.comparisons have also been made with the ordinary two-and three-cavity klystrons.

为了避免在速调管中(例如在三腔速调管中)使用笨重的磁场装置,本文提出一种“离心静电聚焦速调管”的结构方案,并对这种新型的速调管的工作原理也进行分析,计算出这种双腔及三腔速调管的群聚参量,并和普通的双腔、三腔速管进行比较。

Many novel nanosecond pulse circuits with nanosecond rise time and high-repetition rate using step recovery diodes are discussed and recommended in this paper. The physical mechanisms of these circuits are described qualitatively by using the charge storage concepts and theory.The circuits discussed in this paper are divided into three groups: the pulse forming circuits which transform high frequency sinusoidal waves into nanosecond pulses; the pulse shaping circuits which transform pulses with slower transient...

Many novel nanosecond pulse circuits with nanosecond rise time and high-repetition rate using step recovery diodes are discussed and recommended in this paper. The physical mechanisms of these circuits are described qualitatively by using the charge storage concepts and theory.The circuits discussed in this paper are divided into three groups: the pulse forming circuits which transform high frequency sinusoidal waves into nanosecond pulses; the pulse shaping circuits which transform pulses with slower transient response into pulses with faster transient response, and the pulse generator circuits which make use of the step recovery diodes combined with other high-speed semiconductor devices.The inherent capability and importance of the step recovery diodes in the nanosecond pulse circuits are well illustrated by the discussion of various circuits developed in this paper. Other types of new pulse circuits using step recovery diodes with more detailed analysis and practical circuits will be reported in the near future.

本文討論了利用二极管由正向至反向恢复的阶跃特性所构成的多种新穎毫微秒脉冲电路;指出了阶跃恢复二极管在高重复頻率毫微秒脉冲电路中应用的多种可能性;并根据电荷存儲概念对各电路的物理机构提出了定性描述。 本文所研究的电路分成三类:将高重复頻率正弦波变換成毫微秒脉冲的形成电路;将响应慢的脉冲变換成响应快的脉冲的整形电路;与晶体管配合的毫微秒脉冲发生器电路。 通过这些电路的討論,提出阶跃恢复二极管在脉冲电路中应用的重要性及潛在能力。在以后的論文中将探討其它新型电路,并对某些电路作較詳尽的分析,提供实际应用举例。

 
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