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standard samples
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  标准试样
    The test method of material damping property was studied according to the requirement of “GB/T16406 96 Bending Resonance Test Method of Acoustic Material Damping Property”. The problems and their solutions in installing the standard samples were stated.
    本文根据国标GB/T16406—96《声学材料阻尼性能的弯曲共振试验方法》的要求,对材料阻尼性能的测试方法进行了研究,介绍了标准试样在安装中所遇到的问题及处理方法。
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  “standard samples”译为未确定词的双语例句
    Nanometer and Sub-micrometer Standard Samples and Valuation Traceability for SPM
    纳米、亚微米标准样板及SPM量值溯源
短句来源
    The standard samples of rectangle thin plate including crack fixed at four sides is set up with computer imitation technic,and the crack diagnosis system based on neural network is developed.
    采用计算机仿真技术建立了四边夹支矩形板裂纹损伤的标准谱 ,并研制出相应的基于人工神经网络的裂纹诊断系统。
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  standard samples
A method is developed for the separate determination of aluminum and beryllium using cellulose as the support; the method was used for the analysis of real samples and tested with standard samples.
      
IUPAC Recommendations for Reference Standard Samples in pH Measurements
      
Designing of Standard Samples for Determining the Sensitivity of Eddy-Current Devices to the Metal Inclusion Content in a Parama
      
The reasons of the wide propagation and the high effectiveness of using standard samples of magnetically soft materials are explained.
      
A numerical analysis of these errors is performed using standard samples as examples.
      
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A silver thin film has been producted by sputtering process and the electron micrograph and the selected area electron diffraction pattern of the silver thin film have been observed by TEM. The cristal structure of the thin film is the fcc lattice, the camera constant L of the JTEM has been determinated for use of the silver sputtering thin film as a standard sample.

作者用溅射法制作了银薄膜,并通过透射电子显微镜观察了银薄膜的电子显微像和 选区电子衍射环。银的晶体结构为面心立方(fcc)晶格。我们以银薄膜作为标准样品确 定了透射电子显微镜的相机常数。

The wafer analyzer has been used to fulfil many applications needs in the semiconductor industry. The prominent features of the XRF method for semiconductor analysis are as follows: (1) Many types of films such as oxides, silicides and metallic alloy films can be analyzed. (2) Simultaneous analysis of film thickness and compositions in the films can be performed at the same location on a wafer. (3) The same standard samples for standardizing operation can be used repeatedly in most cases since XRF is a...

The wafer analyzer has been used to fulfil many applications needs in the semiconductor industry. The prominent features of the XRF method for semiconductor analysis are as follows: (1) Many types of films such as oxides, silicides and metallic alloy films can be analyzed. (2) Simultaneous analysis of film thickness and compositions in the films can be performed at the same location on a wafer. (3) The same standard samples for standardizing operation can be used repeatedly in most cases since XRF is a non-destructive method and isn' t influenced significantly by the chemical bonding effect.In the past paper, the analysis results of BPSG (Boron-doped Phospho-Silicate Glass) films, with thicknesses greater than 400 nm, were reported. With the recent increased demand for larger scale and higher quality semiconductor devices (larger than 64 Mbit), more accurate analysis with high precision has been required. For the BPSG films as a typical oxide film, it is essential to control the concentrations of B2O3 and P2O5 to improve the effects of thermal processing in the manufacturing of such films. It has also become necessary to analyze thinner films (less than 300 nm) to accommodate the needs of these wafer devices. In the analysis of very thin films, the analytical problem of potentially significant background fluctuations in measuring B Ka must be addressed. A newly designed optical system for boron analysis has improved the signal-to-noise ratio enabling the analysis of BPSG films with thicknesses greater than 250 nm.Other developments designed to improve the capabilities for wafer analysis have been studied as follows: (1) Stability control of the vacuum condition. (2) A special vacuum pump to reduce contamination. (3) A stability device to control the temperature in the analysis chamber.With the new wafer analyzer, 1% relative precision at 10% B2O3 was achieved both in short and long term measurements.The analysis of tungsten silicide on silicon wafer was developed using two kinds of tungsten spectra instead of W La and Si Ka combination (concentration analysis; W-N X-ray, thickness measurement; W La).The relative precision of thickness measurement is less than 0. 2% and the precision of molecular ratio is almost 0. 015 at 2. 5 of Si/W molecular ratio (relative precision is almost 0.56%).

晶片专用X射线荧光分析装置在半导体工业中被用于多种工程的评价。在半导体分析中XRF法的显著特征是能分析各种薄膜(氧化膜、硅化物膜、金属膜等);能同时分析晶片上同一部位的膜厚及组成;XRF法是非破坏分析,因受化学键的影响不大,同一个试样可以反复使用。 厚度在400nm以上的掺硼磷硅玻璃(BPSG)膜的分析结果已做报道。近年,随着对半导体器件的高度集成化、高性能化(64 Mbit以上)要求的提高,希望能更准确地分析。作为有代表性的氧化膜——BPSG膜,为改善其在工程中的热处理特性,B_2O_3、P_2O_5的浓度控制是不可缺少的。为了满足这些要求,必须分析更薄的薄膜(300nm以下),在薄膜分析中的关键问题是B Kα背底的变动。 B分析的新光学系统改善了声噪比(S/N),使250nm以上的BPSG膜的分析成为可能。为了提高晶片分析器的性能,在装置上做了一些改良:真空度的稳定化;减轻污染的特制真空泵;分光室部分的恒温化。新的晶体分析器无论在短期或长期的测定,对10%B_2O_3的测定能做到1%的相对精度。 对在硅晶片上的钨硅化物的分析,不能使用W Lα及Si Kα两种谱线,而应使用W的两种谱线(浓度分析用W-N线,...

晶片专用X射线荧光分析装置在半导体工业中被用于多种工程的评价。在半导体分析中XRF法的显著特征是能分析各种薄膜(氧化膜、硅化物膜、金属膜等);能同时分析晶片上同一部位的膜厚及组成;XRF法是非破坏分析,因受化学键的影响不大,同一个试样可以反复使用。 厚度在400nm以上的掺硼磷硅玻璃(BPSG)膜的分析结果已做报道。近年,随着对半导体器件的高度集成化、高性能化(64 Mbit以上)要求的提高,希望能更准确地分析。作为有代表性的氧化膜——BPSG膜,为改善其在工程中的热处理特性,B_2O_3、P_2O_5的浓度控制是不可缺少的。为了满足这些要求,必须分析更薄的薄膜(300nm以下),在薄膜分析中的关键问题是B Kα背底的变动。 B分析的新光学系统改善了声噪比(S/N),使250nm以上的BPSG膜的分析成为可能。为了提高晶片分析器的性能,在装置上做了一些改良:真空度的稳定化;减轻污染的特制真空泵;分光室部分的恒温化。新的晶体分析器无论在短期或长期的测定,对10%B_2O_3的测定能做到1%的相对精度。 对在硅晶片上的钨硅化物的分析,不能使用W Lα及Si Kα两种谱线,而应使用W的两种谱线(浓度分析用W-N线,膜厚分析对用W-Lα线)。 膜厚测定的相对精度在0.2%以下,对于Si/W=2.5,摩尔比精度约0.015%(相对精度约为0.56%)。

The spectral features of target-gas and several interfences by Fourier transform infrared spectrometer (FTIS) are analysed. Infrared spectral pattern-recognition methods are applied to the environmental monitoring. Selected standard samples are trained, the stable weight values and threshold value of the system are obtained. This method is suitable for real-time remote detection of hazardous-gas in local environment. It shows very high discrimination results. The results of its practical examples for...

The spectral features of target-gas and several interfences by Fourier transform infrared spectrometer (FTIS) are analysed. Infrared spectral pattern-recognition methods are applied to the environmental monitoring. Selected standard samples are trained, the stable weight values and threshold value of the system are obtained. This method is suitable for real-time remote detection of hazardous-gas in local environment. It shows very high discrimination results. The results of its practical examples for local atmospheric environment monitoring prove that pattern recognition methods are quite effective for the fast discrimination specific component of environmental monitoring.

分析了傅里叶变换红外光谱仪(FTIS)遥测的目标气体和几种干扰物的红外光谱特征,给出红外光谱的模式识别方法用于远距离有毒气体环境的监测。用选定的标准样本进行训练,得到稳定的权值和阈值。该方法适合于对局部环境内有毒、有害气体成份的远距离实时监测。具有较高的识别率。应用的结果表明:该方法对特定成份的局部环境监测是十分有效的。

 
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