助手标题  
全文文献 工具书 数字 学术定义 翻译助手 学术趋势 更多
查询帮助
意见反馈
   bias 在 工业通用技术及设备 分类中 的翻译结果: 查询用时:0.138秒
图标索引 在分类学科中查询
所有学科
工业通用技术及设备
无线电电子学
物理学
心理学
临床医学
数学
医药卫生方针政策与法律法规研究
核科学技术
证券
更多类别查询

图标索引 历史查询
 

bias
相关语句
  偏压
    The films' roughness and deposition rate firstly increased, then decreased with the increase of the bias value; they reached the maximum at- 100V, respectively 3. 45nm and 20. 41nm/min.
    TiO2薄膜的RMS粗糙度和沉积速率随脉冲偏压的增大先增大后减小,当偏压为-100V时取得最大值,分别约为3.45nm和20.41nm/min。
    With the substrate bias voltage increases from -50V to -250V, the surface roughness is very smooth;
    随着基体负偏压的增大 (-50~-250V),薄膜表面光滑平整;
    Bias enhanced Nucleation and Textured Growth of the Diamond Films on Si(100)
    金刚石薄膜在Si(100)上的偏压成核与织构生长的研究
短句来源
    Study on Diamond Thin Films with Bias Assisted Plasma Hot Filament CVD
    辅助偏压等离子体热丝CVD方法制备金刚石薄膜的研究
短句来源
    Effect of bias on texture growth of MPCVD diamond films
    偏压对MPCVD金刚石薄膜织构生长的影响
短句来源
更多       
  “bias”译为未确定词的双语例句
    The exchange bias Hex of (Pt/Co)3/Pt/FeMn can be enhanced from 22.3 kA·m-1 without the Pt insertion to 39.8 kA·2m-1 when Pt spacer is 0.4 nm.
    在n=3,FeMn层厚度为25 nm的情况下,未插入Pt层的Hex为22.3 kA·m-1,捅入 0.4 nm的Pt后增加到39.8 kA·m-1,提高了近一倍。 这是因为Pt层的插入增加了,多层膜的垂直各向异性,Co的自旋在垂直界面方向的分量增加造成的。
    The films' nλ=550nm reached the maximum, about 2.51, when the bias was -300V;
    对于波长为550nm的光,-300V时薄膜折射率最高,约为2.51, -100V时薄膜的折射率最低。
    Nucleation behavior of diamond films under bias field by MPCVD
    MPCVD法加偏压下金刚石膜的成核行为
短句来源
    It was observed that Eg ranged from 2.0eV to 3.6eV, decreased with anincrease in bias, and increased with increasing the substrate temperature.
    相反,增大衬底温度,光学带隙宽度则增大,所制备的样品中光学带隙宽度最大为3.6eV,最小的为2.0eV。
短句来源
    The dielectric constant ranged from 60 to 70 under no bias voltage. The loss tangent data ranged from 1.5%~2.5%. The Currie temperature was 284K.
    测量了BST薄膜的介电性能,测试结果表明:在0V偏压下,BST薄膜的介电常数约为60~70,介电损耗为1.5%~2.5%,居里温度为284K,介电温度系数(TCD)为0.5%;
短句来源
更多       
查询“bias”译词为用户自定义的双语例句

    我想查看译文中含有:的双语例句
例句
为了更好的帮助您理解掌握查询词或其译词在地道英语中的实际用法,我们为您准备了出自英文原文的大量英语例句,供您参考。
  bias
Study on characteristics of bias caused by FI-CE split flow electrokinetic injection
      
It was found that bias imposed by SEKI under the condition of continuous sample matrix/running buffer was similar to that done by electrokinetic injection (EKI).
      
The linearity of calibration curve provided by SEKI was similar to that offered by non-bias hydrodynamic injection (HDI) but significantly better than that obtained by EKI.
      
Hence, we make use of bias correction to construct the EL-based score tests and derive a nonparametric version of Wilks' theorem.
      
Special attention is paid to the estimation of prediction bias in stochastic deterministic-predictive control.
      
更多          


A n-type α-Fe2O3 semiconductor photoelectrode was prepared by chemical vapor deposition (CVD) of ferrocene onto Ti foil.An outstanding feather of this electrode is that the action spectrum extends to 670nm which is far beyond 550nm as estimated from the energy gap of α-Fe2O3 semiconductor (2.2eV),and therefore,enhances the photore-sponse.This effect may be attributed to Ti dopping as a result of diffusion of the substrate during prolonged heat treatment under Ar atmosphere.This is evidenced by Auger electron...

A n-type α-Fe2O3 semiconductor photoelectrode was prepared by chemical vapor deposition (CVD) of ferrocene onto Ti foil.An outstanding feather of this electrode is that the action spectrum extends to 670nm which is far beyond 550nm as estimated from the energy gap of α-Fe2O3 semiconductor (2.2eV),and therefore,enhances the photore-sponse.This effect may be attributed to Ti dopping as a result of diffusion of the substrate during prolonged heat treatment under Ar atmosphere.This is evidenced by Auger electron spectroscopy and composition in-depth profile obtained by continous ion sputtering technique.To-gether with X-ray powder analysis and scanning electron microscope the structure of the α-Fe2O3 film was thus determined.This viewpoint is further evidenced by the effect of changing substrate Ti to Pt or Fe foil,by the direct TiO2 dopping effect of sintered α-Fe2O3 electrodes as compared with that of s thermal oxidized pure Fe foil photoelectrode.The flat band potential Efb of the α-Fe2O3 electrodes produced both by the ferrocene CVD technique and by the thermal oxidation of Fe foil are determined from the Mott-Schottky plots.The two set of Efb values are nearly identical.Thus the dopping effect on Efb has not been revealed as a consequence of the uneven dopping distribution.However,owing to Ti dopping the electrode obtained from ferrocene gives profound effect of photoassisted electrolysis of water when a small bias as required by such Efb value is applied.

在钛片上用二茂铁化学沉积(CVD)制备了多晶α-Fe_2O_3光电极。这种电极的工作光谱延伸到670nm,大大超过了与其能带间隙相对应的550nm。这种光响应的增强归因于氩氛热处理时由底层扩散而导致的钛的掺杂。离子溅射逐层剥离术和俄歇电子能谱给出这种掺杂下各组分的表层深度分布,结合X-射线粉末结构分析和扫描电子显微术得到了α-Fe_2O_3薄膜结构。借助于与热氧化法结果的对比,改变CVD底层材料效果对比,以及粉末α-Fe_2O_3的TiO_2掺杂效应,都给上述钛掺杂影响光响应的观点提供了佐证。 以二茂铁CVD和热氧化两种光电极对比,两者同具α-Fe_2O_3外表面而应有接近的平带电势E_(fb),其中前者底层附近的钛掺杂能扩大光响应,应能在E_(fb)值所要求的偏压下得到显著的光助电解水效应。实验结果与此一致。

In this paper the KYF-450 ion plating System is briefly described.Hollow cathode discha- rge(HCD)process is used for reactive ion plating of titanium nitrides.The hardness of the de- posit is more than 2000kg/mm~2.The deposition rate of titanium nitride is O.08μ/min-0.23μ/ min depending on the distance between the substrate and crucible,and the bias voltage appli- ed to substrate.The hardness of the deposit as a function of bias voltage applied to substrate and the partial pressure of nitrogen gas...

In this paper the KYF-450 ion plating System is briefly described.Hollow cathode discha- rge(HCD)process is used for reactive ion plating of titanium nitrides.The hardness of the de- posit is more than 2000kg/mm~2.The deposition rate of titanium nitride is O.08μ/min-0.23μ/ min depending on the distance between the substrate and crucible,and the bias voltage appli- ed to substrate.The hardness of the deposit as a function of bias voltage applied to substrate and the partial pressure of nitrogen gas was investigated.The colour of titanium nitrides is changed with the partial pressure of nitrogen gas and the reflectancee spectra of titanium ni- trides is determined.

本文中简单叙述了KYF-450型离子镀设备。用HCD工艺完成了反应离子镀氮化钛。膜层的硬度在2000kg/mm~2以上,沉积速率是0.08μ-0.23μ/分。沉积速率是坩埚与基体间距和基体负电位的函数。膜层的硬度是基体负电位和氮气分压的函数。氮化钛膜的颜色随氮气分压的变化而改变。测定了氮化钛膜的光谱反射率。

A precise bearing method of digital split-beam array system is considered in this paper. This method is based on the principle of time delay estimation in terms of cross-spectrum of input data, which is proposed by A. G. Piersol. In the case of array processing there are more than two elements. We have to find the equivalent acoustic center. For a line array, the equivalent acoustic center is independent of frequency. But for a circle array the center is dependent on frequency. We derived a simple formula for...

A precise bearing method of digital split-beam array system is considered in this paper. This method is based on the principle of time delay estimation in terms of cross-spectrum of input data, which is proposed by A. G. Piersol. In the case of array processing there are more than two elements. We have to find the equivalent acoustic center. For a line array, the equivalent acoustic center is independent of frequency. But for a circle array the center is dependent on frequency. We derived a simple formula for circle array in the case of small incident angle. The precise value of angle of incident signal can be calculated directly from input data.The estimation bias depends on the length of DFT, sampling frequency and the number of accumulation. Some measures for improving the accuracy of angle bearing are described in this paper. One method is to weight the estimation value in each frequency bin of DFT in terms of their power spectrum values. In some cases it has been proved that choosing a suitable dow is an efficient method.The block diagram of digital split-beam system is illustrated. Some results simulated in computer are presented. For a digital sonar it is possible to track more than one targets simultaneously by using the method described in this paper.

本文讨论数字式声呐分裂波束精确定向的问题。利用Piersol提出的互谱法估计时延的原理,给出线阵与圆阵分裂波束系统的信号入射角与等效声中心的时延解算公式。利用这些公式可以根据输入数据,直接给出目标的准确入射角的数值。文中给出估计精度的表达式。它与累加次数、DFT的长度及采样周期有关。同时,还分析了由于对随机信号的截断所带来的误差。提出了对估计量加权、对输入数据加窗和合理选择DFT参数,以提高估计精度的方法。文中还给出系统的方框图及部分计算机模拟的结果。本文所提供的方法可以在数字式声呐中用于实时跟踪多个目标。

 
<< 更多相关文摘    
图标索引 相关查询

 


 
CNKI小工具
在英文学术搜索中查有关bias的内容
在知识搜索中查有关bias的内容
在数字搜索中查有关bias的内容
在概念知识元中查有关bias的内容
在学术趋势中查有关bias的内容
 
 

CNKI主页设CNKI翻译助手为主页 | 收藏CNKI翻译助手 | 广告服务 | 英文学术搜索
版权图标  2008 CNKI-中国知网
京ICP证040431号 互联网出版许可证 新出网证(京)字008号
北京市公安局海淀分局 备案号:110 1081725
版权图标 2008中国知网(cnki) 中国学术期刊(光盘版)电子杂志社