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dielectric film     
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  介质膜
     High Frequency C-V Method Applied to the Characterization of Memory Trap Distribution in SiO_2-Si_3N_4 Dielectric Film
     SiO_2-Si_3N_4栅介质膜陷阱特性的高频C-V分析
短句来源
     The experimental results indicate that Si_xO_yN_z is a promising dielectric film.
     实验结果表明:Si_xO_yN_z是一种有希望的介质膜
短句来源
     Influence of Capability of Ta_2O_5 Dielectric Film on Performance of Wet Tantalum Electrolytic Capacitor
     Ta_2O_5介质膜性能对液体钽电容器性能的影响
短句来源
     Coating For Large Aperture(φ125mm)Ultraviolet(248nm)Dielectric Film
     大口径(φ125mm)紫外(248nm)介质膜镀制
短句来源
     Nonlinear TE_m mode in dielectric film waveguides
     介质膜波导中的非线性TE_m模
短句来源
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  介质薄膜
     Study of new SiO-Ta_2O_5 compound dielectric film capacitors
     新型SiO-Ta_2O_5复合介质薄膜电容器的研究
短句来源
     Study of damage mechanism of optical dielectric film by high power laser
     高功率激光对光学介质薄膜破坏机理的研究进展
短句来源
     Laser Induced Pressure Pulse Method in Measurement of Space Charge Distribution of Dielectric Film and Its Application in Other Aspects
     激光感应压力脉冲法在测量介质薄膜内空间电荷分布及其它方面的应用
短句来源
     A new SiO-Ta2O5 campound dielectric film copacitors was developed. The SiO- Ta2O5 film isgrowed on the plate of micro-crystal glass by sputter method. Its two electrodes are Al and Auelectrodes.
     研制出一种新型SiO-Ta2O5复合介质薄膜电容器,复合介质膜是用溅射法将SiO和Ta2O5材料溅射在微晶玻璃片上形成的,其下电极Al和上电极Au是用蒸发法制备的.这种电容器具有耐压强度高、损耗小、漏电低、精度高、稳定性好、合格率高等特点.
短句来源
     Three theoretical calculating methods arc offered for analysing the refractive index of homogeneously mixed dielectric film, and the values of the refractive index with different weight percentage of ZnS and CeF_3 were calculated and tested.
     本文分析了均匀混合介质薄膜折射率的三种理论计算方法,计算并实测了不同重量比的ZnS—CeF_3均匀混合薄膜的折射率。
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  介质层
     Three photos of the fingerprint discharge image are obtained by static state method in cases of the dielectric film thickness of 01 mm, 02 mm and 03 mm respectively.
     采用静态指纹提取方法,比较了3种不同厚度(0 1mm、0 2mm、0 3mm)介质层时指纹图像的清晰度.
短句来源
     Relation Between the Reliability of Thin Dielectric Film and Statistical Analysis of Traps
     薄栅介质层可靠性与陷阱统计分析
短句来源
     Influence of Dielectric Film Thickness and Surface Discharge on Fingerprint Discharge Image
     介质层厚度及其表面放电对指纹放电成像质量的影响
短句来源
     Quality Evaluation of Thin Dielectric Film by TDDB Measurements
     TDDB击穿特性评估薄介质层质量
短句来源
     It is proved that gate voltage increment at breakdown ΔV bd represents magnitude and position distribution of charge occupied traps,which reflects quality and uniformity of dielectric film.
     实验分析表明在加速失效实验中测量击穿电量Qbd的同时 ,还可以测量击穿时的栅电压增量ΔVbd. 因为ΔVbd的统计分布反映了栅介质层中带电陷阱的数量及其位置分布 ,可以表征栅介质层的质量和均匀性 .
短句来源
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  介质膜的
     The technology of multilayer dielectric film with ZrO_2-SiO_2 has been researched further to improve laser damage resistance of reflectors.
     为提高反射膜的抗激光强度,对ZrO_2-SiO_2多层介质膜的制造工艺进行了深入的研究。
短句来源
     Charge Characteristics and Optical Properties of Rapid Thermal Nitride SiO_xN_y Thin Dielectric Film
     快速热氮化SiO_xN_y薄介质膜的电荷特性与光学性质
短句来源
     Study on the Electronic Characteristics of Nitrogen Rich SiO_xN _y Thin Dielectric Film With DLTS Technique
     DLTS技术研究富氮SiO_xN_y薄介质膜的电学特性
短句来源
     The etching rate of Si (100), (111) and (110) plane, as well as the etching rate of dielectric film SiO_2 are presented when low Al etching rate (<1nm/min) achieved.
     测试了在满足铝膜极低的腐蚀速率(<1nm/min)时,不同温度下该腐蚀液对硅(100)、(111)和(110)晶面及SiO2介质膜的腐蚀速率。
短句来源
     Experimental Advance in Dielectric Film of Thin Film Electroluminescent Panel
     薄膜电致发光屏介质膜的实验进展
短句来源
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  dielectric film
We present evidence that the probability of breakage during sub-micron GaAs device fabrication is a function of dielectric film edge stress, and not necessarily dependent on the magnitude of a critical flaw in the as-received wafer.
      
Characteristics of the NO dielectric film with low pressure chemical vapor deposition in-situ nitridation
      
Method of increasing the electric strength of a dielectric film
      
The influence of voltage on the rate of degradation of formed MDM systems with various upper electrode materials and various dielectric film thicknesses is examined.
      
It was found that when a thin dielectric film is exposed to the plasma of a low-voltage gas discharge, channels with elevated conductivity form in the film and these channels significantly facilitate the subsequent electroforming of the MIM system.
      
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