Three theoretical calculating methods arc offered for analysing the refractive index of homogeneously mixed dielectric film, and the values of the refractive index with different weight percentage of ZnS and CeF_3 were calculated and tested.
We present evidence that the probability of breakage during sub-micron GaAs device fabrication is a function of dielectric film edge stress, and not necessarily dependent on the magnitude of a critical flaw in the as-received wafer.
Characteristics of the NO dielectric film with low pressure chemical vapor deposition in-situ nitridation
Method of increasing the electric strength of a dielectric film
The influence of voltage on the rate of degradation of formed MDM systems with various upper electrode materials and various dielectric film thicknesses is examined.
It was found that when a thin dielectric film is exposed to the plasma of a low-voltage gas discharge, channels with elevated conductivity form in the film and these channels significantly facilitate the subsequent electroforming of the MIM system.