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   electron transition 的翻译结果: 查询用时:0.198秒
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electron transition     
相关语句
  电子跃迁
     The characters of 4f electron transition are analyzed, and the blue and green visible band upconversion luminescence of Er3+ co-doped in ZrF2-SiO2 and the exciting state absorp-tino(ESA) near wave length 404、445、525 and 548nm under 980nm LD excitation are presented.
     分析了稀土Er3+中4f电子跃迁的特征,证实了在980 nm泵浦的激发下,ZrF2-SiO2:Er3+ 在404、445 nm和525、548nm附近的蓝/绿可见波段上转换发光过程是激发态吸收(ESA)。
短句来源
     Electron traps play an important role in the long afterglow photoluminescence of CaAl_2O_4∶Eu~ 2+ ,Nd~ 3+ ,La~ 3+ . Eu~ 2+ is the luminescence ion. The photoluminescence of CaAl_2O_4∶Eu~ 2+ ,Nd~ 3+ ,La~ 3+ comes from the 4f~65d→4f~7 electron transition of Eu~ 2+ .
     在CaAl2O4∶Eu2+,Nd3+,La3+中,Eu2+是发光离子,Nd3+和La3+是辅助激活剂,发射光谱由Eu2+的激发态4f65d到基态4f7的电子跃迁产生。
短句来源
     SrCe1-xYbxO3-a(x=0-0.20) powders were prepared by sol-gel method and their structure changes and band-gap energies of electron transition were researched by XRD and UV-Vis.
     利用溶胶-凝胶法合成了SrCe1-xYbxO3-a(x=0-0.20)系列粉体,运用XRD和UV-Vis研究了它们的结构变化和电子跃迁的禁带宽度。
     The electron transition H_2C OH O~-ad rdsHCOOH+1/2H_2+e~- is the controlled step of the rate of anode reaction,which is from the results of analysis of the test of the rotary-disk electrode.
     从镀液的旋转圆盘电极测试结果分析看,电子跃迁步骤H2C(OH)O-ad rdsHCOOH+1/2H2+e-为镀液中阳极反应速度的控制性步骤.
短句来源
     SrCe1-xYxO3-α(x=0-0.20) high-temperature proton conductors were prepared by sol-gel method and their structure changes and band-gap energies of electron transition were researched by XRD and UV-Vis.
     利用溶胶-凝胶法合成了SrCe1-xYxO3-α(x=0—0.20)系列高温质子导体粉体,运用XRD和UV—Vis研究了它们的结构变化和其中的电子跃迁的禁带宽度。
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  电子转移
     It is deduced that F~- and Cl~- form a bridged complex, [Cr~Ⅱ -X~- -Cr~Ⅱ ],~≠ in which electron transition is easily carried out.
     由此可推测,F~-、Cl~-在金属表面和铬酸的还原产物重铬酸铬形成了易发生电子转移反应的表面过渡态配合物〔Cr~Ⅰ-X-Cr~Ⅱ〕~≠.
短句来源
     The results indicated that: the electrochemical reaction of epinephrine shown semirreversible character of electron transition at platinum electrode in 0.5mol/L H 2SO 4 solution, the kinetic parameters such as diffusion coefficient, D R , is 2.75×10 -6 cm 2/s; heterogeneous electron transfer rate constant, k s, is 2.27×10 -4 cm/s.
     结果表明 :在 0 .5mol LH2 SO4 溶液中铂电极上 ,肾上腺素的电氧化反应具有准可逆电荷跃迁的特征 ,其动力学参数 ,扩散系数 (DR)为 2 .75× 10 - 6 cm2 s ,异相电子转移速率常数 (ks)为 2 .2 7× 10 - 4cm s.
短句来源
     A great deal of researches have indicated that organic compounds is promising nonlinear optical materials, since they can be synthesized with strongπelectron conjugated systems and electron transition between ligands and central atoms, which result in enhancement of nonlinear polarizability.
     大量的研究表明有机化合物是一种很有前途的非线性光学材料,可以合成结构中含有较强π电子共轭体系的化合物,配体与中心原子间的电子转移,大大提高了非线性极化率。
短句来源
     It is deduced that F- and Cl- have entered into on the surface of the cathod and formed a bridged complex with reduced chromium dichromate, [CrIII-X--CrIII], in which electron transition was easily carried out.
     由此可推测,F~-、Cl~-在金属表面和铬酸的还原产物重铬酸铬形成易发生电子转移反应的表面过渡态配合物,[Cr~Ⅲ-X-Cr~Ⅲ]~≠。
短句来源
     Their molecule structures have strong π electron conjugated systems and electron transition between organic ligands and center metal atoms, which result an enhancement of their nonlinear polarizabilities.
     它的结构中含有较强的π电子共轭体系,并且有机配体与中心原子间的电子转移,大大提高了其非线性极化率。
短句来源
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  电荷跃迁
     The results indicated that: the electrochemical reaction of epinephrine shown semirreversible character of electron transition at platinum electrode in 0.5mol/L H 2SO 4 solution, the kinetic parameters such as diffusion coefficient, D R , is 2.75×10 -6 cm 2/s; heterogeneous electron transfer rate constant, k s, is 2.27×10 -4 cm/s.
     结果表明 :在 0 .5mol LH2 SO4 溶液中铂电极上 ,肾上腺素的电氧化反应具有准可逆电荷跃迁的特征 ,其动力学参数 ,扩散系数 (DR)为 2 .75× 10 - 6 cm2 s ,异相电子转移速率常数 (ks)为 2 .2 7× 10 - 4cm s.
短句来源
     Based on the theory of electron transition and theory of energy belt,this article analyzes the configuration and characteristics of the materials which can reflect near-infrared ray.
     根据电荷跃迁理论和能带理论,分析了红外反射材料物质的结构特征。
短句来源
  特征跃迁
     It was found that the luminescence is red emitting and short afterglow which belong to the 4f→4f electron transition of Eu 3+ when y/x <1.5;
     发现当y x <1.5时 ,产生余辉较短的红色发光 ,属于Eu3+ 离子 4f→ 4f特征跃迁发射 .
短句来源
     however, when y/x >1.5, the luminescence is blue or green emiting and long afterglow which belong to the 5d→4f electron transition of Eu 2+ .
     当y x >1.5时 ,产生具有超长余辉的绿色或蓝色发光 ,属于Eu2 + 离子 5d→ 4f特征跃迁发射
短句来源

 

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  electron transition
It was found that in the lowest excited singlet state of the phenyl benzoate molecule an adiabatic photoreaction can occur, as a result of which the energy of the S0-S1 electron transition decreases to values of ?2 eV.
      
The calculated value of the first π-electron transition as a function of the number of atoms in the polyene chain is in good agreement with experiment.
      
An exponential dependence of electron transition rate on the parameters of the mixing of the molecular vibrations is established.
      
An analysis of this potential demonstrates that the tunnel electron transition in the quantum dot can occur only in the direction perpendicular to the film plane.
      
The question of estimating the oscillator strengths in the region of the π → π* electron transition in the spectra of benzene-base polymers (polyarylene alkyls) is considered.
      
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The Photoluminescence Spectra and the Luminescence excitation spectra of CdIn_2Se_4 single Crystal grown by the Chemical transport method were measured in the tem-perature range from 2°K to 185°K.The luminescence spectrum is Composed by a singleGaussian shaped band(we shall Call it band I)at temperature above 83°K.The bandis Centered at 1.2 eV at 85K;its halfwidth is 0.4 eV.Below 85°K,another lumines-cence band(We shall Call it band Ⅱ)appears at higher energy(1.40eV).Themaxima of the luminescene bands shift...

The Photoluminescence Spectra and the Luminescence excitation spectra of CdIn_2Se_4 single Crystal grown by the Chemical transport method were measured in the tem-perature range from 2°K to 185°K.The luminescence spectrum is Composed by a singleGaussian shaped band(we shall Call it band I)at temperature above 83°K.The bandis Centered at 1.2 eV at 85K;its halfwidth is 0.4 eV.Below 85°K,another lumines-cence band(We shall Call it band Ⅱ)appears at higher energy(1.40eV).Themaxima of the luminescene bands shift to higher energies when the excitation inte-nsity increases.The excitation spectra do not display any structure at energies lowerthan the energy gap.Analysing our experimental results and Comparing them with the publishedworks on luminescene and photoconductity of CdIn_2Se_4,we Can suggest a scheme ofthe energy levels,localized in the gap of this crystal and propose a model for therecombination processes of photoexcited carriers.Band I can be attributed to the ra-diative recombination of an electron in the trap distribution with a hole in an accettorlevel localized at o,14 eV above the valence band;We suggest that Band Ⅱ is dueto an electron transition from a donor level to tho valence band.The position of thedonor level is o,19 eV below the minimum of Conduction band.The observationof the thermal quenching of band (?) and the sublinear relation between luminesceneeand excitaton intensity suppest that there should be also a non-radiaive recominationcenter in the gap.

本文叙述了在2°K—185°K 的温度范围内,对化学输运法生长的单晶所测量的CdIn_2Se_4光致发光谱和发光激发谱的结果。在高于83°K 的温度下,发光谱是由一个高斯分布形状的带组成(我们称它为带Ⅰ),在85°K 下,这个带的中心位于1.2eV 处;它的半宽度是0.4eV。在低于85°K的温度下,在较高能量(1.40eV)处,出现另一个发光带(我们称它为带Ⅱ)。当激发强度增加时,发光带的最大值朝较高能量方向移动。激发谱不显示任何低于带隙能量的结构。分析我们的试验结果并同已发表的关于CdIn_2Se_4发光与光电导的工作比较,我们提出了在此种晶体带隙中的能级图和光激发载流子复合过程的模型。我们把带Ⅰ归因于在分布陷阱中的电子与受主能级上的空穴辐射复合,这个能级位于价带上0.14eV 处;带Ⅱ是由于电子从施主能级到价带的跃迁,施主能级位于导带底0.19eV 处。温度猝灭和发光与激发强度间的亚线性关系表明在带隙内应存在一个非辐射的复合中心。

The ultraviolet photoelectron spectroscopy of GaAs (100) surface (4×1) structure has been measured by using a polarized UV light source. From the differential spectra between the UPS of the clean surface and the surface with adsorbed oxygen, the surface state peak located within 2eV below valence band maximum could be identified. According to the spectra obtained with s- and p-polarized light and the selection rule of electron transition, it could be shown that this surface state cosists of three peaks:...

The ultraviolet photoelectron spectroscopy of GaAs (100) surface (4×1) structure has been measured by using a polarized UV light source. From the differential spectra between the UPS of the clean surface and the surface with adsorbed oxygen, the surface state peak located within 2eV below valence band maximum could be identified. According to the spectra obtained with s- and p-polarized light and the selection rule of electron transition, it could be shown that this surface state cosists of three peaks: the peak at 0.5eV below valence band maximum corresponding to the bridge bond states of surface Ga atoms, the peak at 0.7eV resulting from the bridge bond states of surface As atoms, and the peak at 1.3eV related to the dangling bond states.

用偏振的紫外光源测量了GaAs(100)表面(4×1)结构的UPS谱,从清洁表面和吸附氧以后UPS的差谱中辨别出了在价带顶以下2eV以内的表面态峰,根据用偏振光所得到的谱和跃迁选择定则的讨论,认为表面态包含了三个峰,价带顶以下0.5eV处有一个对应于表面Ga原子桥键态的峰,在0.7eV处有对应于表面As原子桥键态的峰,而在1.3eV处的峰则同表面原子的悬键态相联系。

Using the multiphonon transition theory as applied to the problem of soliton pairand polaron generation in polyacetylene by Su and Yu,we have calculated the decayrate of an injected electron into a polaron and an electron-hole pair into a soliton pair.The main distinguishing feature of our calculation is that the nonorthogonality of theelectronic wave functions in the N-electron transition is strictly taken into account. It was shown that the nonradiative decay time of an injected electron into a...

Using the multiphonon transition theory as applied to the problem of soliton pairand polaron generation in polyacetylene by Su and Yu,we have calculated the decayrate of an injected electron into a polaron and an electron-hole pair into a soliton pair.The main distinguishing feature of our calculation is that the nonorthogonality of theelectronic wave functions in the N-electron transition is strictly taken into account. It was shown that the nonradiative decay time of an injected electron into a polaronby lattice relaxation is not less than 4.7×10~(-15)s.which is comparable with the numericalresult obtained by Schrieffer et al.,and that of an electron-hole pair into a soliton-pairis more than 1×10~(-15)s, which is in agreement with the experimental results. The calculation of cross section for the soliton-pair photoproduction shows that thetransition for neutral soliton-pair photoproduction is forbidden that is in agreementwith the selection rule discussed by Su and Yu.

根据苏肇冰和于渌提出的聚乙炔中极化子及孤子对的形成理论,本文具体计算了注入电子和电子-空穴对通过多声子跃迁形成电子极化子和孤子对的形成速率.我们计算的特点是严格考虑了多电子跃迁中的非正交性问题. 计算结果表明一个注入电子在不小于 4.7 ×10~(-15)秒的时间内弛豫形成电子极化子,很接近Schrieffer等人的计算结果.而电子-空穴对在大于 1×10~(-15)秒的时间内形成孤子对,与有关实验相符. 对光生中性孤子对及带电孤子对的俘获截面的比较表明,生成中性孤子对的跃迁是禁戒的,这与苏、于所讨论的选择定则是一致的.

 
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